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We report the synthesis of a hybrid layered cobalt hydroxide sample and its redox behaviors in the electrochemical oxygen evolution reaction (OER). Compound Co7(OH)12(C2H4S2O6)·1.6H2O was synthesized via a homogeneous alkalization reaction using Co(SO3C2H4SO3) and hexamethylenetetramine. This compound comprises cationic host layers of {[Co7(OH)12]2+}∞, which comprise octahedrally (CoOh) and tetrahedrally (CoTd) coordinated Co cations at a CoOh : CoTd ratio of 5 : 2. The ethane-disulfonate ions are combined with the cationic host layers by electrostatic attractions and hydrogen bonding as a hybrid pillared layered framework. This hybrid sample can promote the OER in 1 M KOH with an overpotential as low as ∼410 mV (at a current density of 10 mA cm−2). In situ Raman spectroscopy showed that the sample first evolved into Co(III)-based phases comprising a mixture of layered CoOOH and spinel Co3O4, and the Co(III)-based compounds were converted into Co(IV)–O intermediates containing [CoO6] units at the onsite of the OER. The structural evolution behaviors suggest that the catalyst prefers a topotactic phase transition and the CoOh and CoTd units exhibit different activities in the electrochemical reaction. The electron transfer events involved in the electrochemical reaction were identified by Fourier-transformed alternating current voltammetry. [ABSTRACT FROM AUTHOR]

Low-loss passive components for RF signals compatible with the on-wafer process are essential for realizing integrated circuits with high-frequency and high-power operations. We successfully fabricate thick-metal-film-based coplanar waveguides (CPWs) and inductors (INDs) by directly bonding a 17- $\mu \text{m}$ -thick Al foil to a sapphire (0001) substrate and wet etching. The surface-activated bonding (SAB) technologies at room temperature are used. RF characteristics of the foil-based passive components are compared with those of components made of 1- $\mu \text{m}$ -thick evaporated Al layers. We obtain a better insertion loss and a higher ${Q}$ -factor for foil-based CPWs and INDs, respectively. The measured characteristics are compared with those obtained by an analysis based on the equivalent circuit scheme. Impacts of side etching of foils and surface oxidation on their characteristics are observed. Characteristics of virtual components made of 1- $\mu \text{m}$ -thick Al foils, i.e., 1- $\mu \text{m}$ -thick Al films with the same resistivity as that of foils, are analytically investigated. [ABSTRACT FROM AUTHOR]

Abstract From transmission electron microscope (TEM) observation, a 25 nm thick amorphous layer was confirmed at the diamond/Si bonding interface without annealing, the amorphous layer thickness decreased with the annealing temperature. No cracking even in nanometer scale occurred even after high-temperature annealing at 800 °C. From in-situ micro-Raman monitoring, the compressed stress was observed in the Si of the bonding interface without annealing with respect to the bonding Si substrate. A tensile stress relaxation was observed in the diamond of the bonding interface with respect to the polished diamond. These results were attributed to the large load applied to the diamond and Si substrates during bonding process. After annealing at 400 °C, the residual stress in the Si of the bonding interface decreased, while the residual stress in the diamond of the bonding interface increased, which should be due to the residual stress caused by the applied load was released by annealing process. The residual stress in the Si and diamond of the bonding interface increased and decreased, respectively, as the annealing temperature increased from 400 to 1000 °C. The main reason was due to the structure change of the amorphous layer and the tensile stress relaxation in the diamond of the bonding interface. Graphical abstract Unlabelled Image Highlights • Diamond/Si bonding interface could withstand a load of high temperature as high as 800 °C. • The amorphous layer observed at the bonding interface decreased with annealing temperature. • The residual stress released in the diamond of the bonding interface decreased with annealing temperature. • The residual stress formed in the bonding interface annealed at 1000˚C is much smaller than that of diamond grown on Si. [ABSTRACT FROM AUTHOR]

Abstract Direct bonding of diamond and Al is achieved by surface activated bonding at room temperature. The interfacial structures of the diamond/Al bonding interface with annealing at different temperatures are investigated under in-situ annealing in a transmission electron microscope (TEM). An amorphous layer with a thickness of 4 ± 0.5 nm is formed at the bonding interface without annealing, the thickness of the amorphous layer decreases with increasing annealing temperature, the amorphous layer vanished after annealing at 600 °C. No structural defects are observed at the bonding interface with annealing at different temperatures. [ABSTRACT FROM AUTHOR]

Frequency-domain probe beam deflection (FD-PBD) is an experimental technique for measuring thermal properties that combines heating by a modulated pump laser and measurement of the temperature field via thermoelastic displacement of the sample surface. In the conventional implementation of FD-PBD, the data are mostly sensitive to the in-plane thermal diffusivity. We describe an extension of FD-PBD that introduces sensitivity to through-plane thermal conductance by immersing the sample in a dielectric liquid and measuring the beam deflection created by the temperature field of the liquid. We demonstrate the accuracy of the method by measuring (1) the thermal conductivity of a 310 nm thick thermally grown oxide on Si, (2) the thermal boundary conductance of bonded interface between a 3C-SiC film and a single crystal diamond substrate, and (3) the thermal conductivities of several bulk materials. We map the thermal boundary conductance of a 3C-SiC/diamond interface with a precision of 1% using a lock-in time constant of 3 ms and dwell time of 15 ms. The spatial resolution and maximum probing depth are proportional to the radius of the focused laser beams and can be varied over the range of 1–20 μm and 4–80 μm, respectively, by varying the 1/e2 intensity radius of the focused laser beams from 2 to 40 μm. FD-PBD with liquid immersion thus enables fast mapping of spatial variations in thermal boundary conductance of deeply buried interfaces. [ABSTRACT FROM AUTHOR]

We studied electrical properties of n-Si/n-Ga2O3 heterojunctions fabricated by surface-activated bonding. The energy barrier heights (qϕb) at the Si/Ga2O3 interface for different reverse voltages (Vrev) were derived from temperature-dependent current density–voltage (J–V–T) characteristics. With shifting Vrev to the negative direction, qϕb gradually decreased and reached a constant value due to negatively charged interface states. The conduction band offset at the heterointerface was estimated to be 0.18 eV from the Vrev dependence of qϕb. The qϕb calculated from a capacitance of the heterojunction at thermal equilibrium was larger than those derived from the J–V–T characteristics, attributing to spatially inhomogeneous qϕb caused by the non-uniform distribution of the charged interface states. The density of shallow interface states was also extracted from the reverse J–V–T characteristics, which was estimated to be about 6 × 1012 cm−2 eV−1. [ABSTRACT FROM AUTHOR]

Group-III nitride on Si tandem solar cell structures, which are free from materials with high impacts on the environment such as group-III arsenides or phosphides, were successfully fabricated using the surfaceactivated bonding of nitride-based sub cells, which had been grown on (0001) GaN substrates, and (111) Si-based sub cells. The backsides of the GaN substrates had been polished and their averaged roughness was smaller than 1 nm prior to bonding. The open-circuit voltage ( VOC) of the tandem cells was almost equal to the sum of VOC of the respective sub cells, while the conversion efficiency was limited by the properties of the nitride-based top cells. Nitride-on-(100) Si tandem cells were also fabricated and the enhancement in VOC was observed. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Serum fetuin A has been shown to be associated with the risk of vascular calcification and atherosclerosis, and it can predict the onset of cardiovascular mortality in dialysis patients. The carotid intima-media thickness (cIMT) is an accessible and reliable method to identify the subclinical atherosclerosis. The aim of this study was to investigate the relationships between dialysate calcium concentrations and fetuin A or cIMT in patients undergoing peritoneal dialysis (PD). Forty patients, newly diagnosed end-stage renal disease (ESRD) and undergoing peritoneal dialysis, were enrolled in the study, with a calcium content of the peritoneal dialysis (PD) solution of 1.25 mmol/L in 20 patients (low-Ca group) and 1.75 mmol/L in 20 patients (standard-Ca group). The patients were followed up for 12 months after the PD conducted. Serum fetuin A was determined using a human fetuin A enzyme-linked immunosorbent assay kit and cIMT was detected using ultrasonic wave. We observed no difference between two groups with regard to the baseline data of fetuin A, cIMT, calcium, phosphorus, calcium-phosphorus product, high sensitivity CRP (hsCRP), parathyroid hormone (PTH), or lipid parameters. After 12 months follow-up, fetuin A (263.92 ± 16.1 vs. 282.76 ± 21.0, p = 0.017) and calcium-phosphorus product (39.85 ± 7.76 vs. 47.50 ± 6.65, p = 0.009) were obviously lower in the low-Ca group than standard-Ca group, the other serum parameters were not different between these two groups. Compared with baseline data, serum fetuin A concentration significantly reduced in low-Ca group ( p < 0.05). The number of patients with increased cIMT and newly occurring cardiovascular events in the low-Ca group were significantly reduced than standard-Ca group ( p < 0.05). In conclusion, our data suggest that low calcium dialysate treatment is associated with the decreased serum fetuin A concentration and serum calcium-phosphorus product, and it is associated with the reduced number of PD patients with increased cIMT or with newly occurring cardiovascular events. However, more studies with lager sample size should be performed in the future. [ABSTRACT FROM AUTHOR]

The band structure of p-Si/n-InGaP heterojunctions fabricated by using surface-activated bonding (SAB) was investigated by measuring their current-voltage (I-V) and capacitance-voltage (C-V) characteristics. The I-V characteristics of p-Si/n-InGaP junctions showed rectifying properties similarly to p-Si/n-GaAs junctions. The conduction band discontinuity of the p-Si/n-InGaP junctions was determined to be 0.41 eV from C-V measurements, which indicated that the Si/InGaP junctions revealed the type-I band line-up in contrast to the Si/GaAs junctions. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Abstract: We present an improved preparation method for the growth of high quality crystals of cuprous oxide films grown by thermal oxidation of cupper foils with water vapor. This method proved to be good for preparing cuprous oxide films with high purity and large grain size. X-ray diffraction studies revealed the formation of Cu2O films with preferred (111) orientation. The cuprous oxide diodes fabricated by the above technique have been studied using current–voltage method. [Copyright &y& Elsevier]

We have investigated the effects of grain size and orientation of copper substrates for the growth of cupric oxide nanowires by thermal oxidation method. Long, less-roughness, high-density, and aligned cupric oxide nanowires have been synthesized by heating (200) oriented copper foils with small grain size in air gas. Long and aligned nanowires of diameter around 80nm can only be formed within a short temperature range from 400 to 700?C. On the other hand, uniform, smooth-surface, and aligned nanowires were not formed in the case of larger crystallite size of copper foils with (111) and (200) orientation. Smaller grain size of copper foil with (200) orientation is favorable for the growth of highly aligned, smooth surface, and larger-diameter nanowires by thermal oxidation method. [ABSTRACT FROM AUTHOR]

A new family of layered rare-earth hydroxides rigidly pillared by sulfate ions has been synthesized through homogeneous precipitation of lanthanide sulfate salts driven by hydrolysis of hexamethylenetetramine. Obtained materials were composed of aggregated thin platelet microcrystallites. Chemical analysis indicates that these samples have a general chemical formula of Ln2(OH)4SO4·nH2O (Ln = Pr to Tb; n∼ 2). The compounds are crystallized in an A-base-centered orthorhombic structure with unit cell dimensions of a∼ 0.63 nm, b∼ 1.6−1.7 nm, and c∼ 0.37 nm. Fourier transform infrared (FT−IR) spectra indicate that sulfate ions are in a trans-bidentate arrangement, which suggests that sulfate ions bridge adjacent rare-earth hydroxide layers through direct coordination to lanthanide cations. The compounds showed two-step weight loss (200−275 °C and ∼350 °C) in the heating process, which can be ascribed to dehydration and dehydroxylation, respectively. Robust lanthanide−sulfate chelate bondings can be inherited even after calcination above 450 °C to yield layered oxysulfates of Ln2O2SO4. Trends in compositional and structural features as well as bonding aspects of hydroxyl groups and sulfate ions across the series, Pr to Tb, are described. Eu and Tb samples exhibited photoluminescence (PL) properties with characteristic red and green emissions, respectively, through both the direct excitation of lanthanide ions themselves and the charge-transfer channels between lanthanide ions and surrounding oxygen atoms. [ABSTRACT FROM AUTHOR]

Abstract: CuO nanowires have been synthesized by heating a Cu foil in an ambient condition. The diameters of nanowires can be controlled by changing the annealing temperature. The morphology, composition, and structure were analyzed by using X-ray diffraction (XRD) and scanning electron microscope (SEM). To investigate the detailed layering structure of the substrates after oxidation, the cross-sectional analysis was also performed by using field emission-SEM and energy dispersive X-ray spectroscopy (EDX). The EDX measurements indicated that the CuO nanowires were grown on the CuO/Cu2O layer, which was formed on the surface of Cu foil. [ABSTRACT FROM AUTHOR]

Abstract: The phase transition of CdSe nanocrystallines from zinc blende to wurtzite phase can be controlled by varying the volume ratio of ethanolamine (EA) and water (WA) in their mixed solution and the morphologies of the CdSe nanocrystals are controlled simultaneously. The phase transition has been demonstrated by XRD patterns and HRTEM images. The samples are investigated by Raman spectrum. The Raman shifts of the samples show a gradual blue shift with the gradual transformation from zinc blende to wurtzite CdSe phase. This method is convenient and controllable which can provide a strategy way to control the phase and morphology of the nanomaterials and study their phase transitions in nanoscale field. [Copyright &y& Elsevier]

Abstract: SnO2 urchin-like structures composed of nanorods with diameters of 10–15nm and lengths of 50–70nm have been hydrothermally synthesized via a H2O2-assisted route without any surfactant, using SnCl2 as raw material. With the addition of methenamine (HMT), SnO2 hollow microspheres with diameters of 2–3μm and shell thickness of 60–140nm were also prepared. The as-obtained products were examined using diverse techniques including X-ray powder diffraction (XRD), Raman spectroscopy, field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), selected-area electron diffraction (SAED), high-resolution TEM and photoluminescence spectra. The gas sensitivity experiments have demonstrated that the as-synthesized SnO2 materials exhibit good sensitivity to alcohol vapors, which may offer potential applications in gas sensors. [Copyright &y& Elsevier]

We fabricated p-Si/n-Ga2O3 and p+-Si/n-Ga2O3 heterostructures by surface-activated bonding (SAB) and investigated their electrical properties. Current density–voltage measurement was performed before and after thermal annealing at 450 °C. The current density substantially increased after annealing, which was attributed to thinning of an intermediate layer formed by the bonding process. Distinctive two-stage capacitance–voltage characteristics were observed for p-Si/n-Ga2O3 heterostructures, which were well reproduced by numerical calculation considering the effect of two-dimensional electron gas formed at the heterointerface. These results indicate that Ga2O3-based p–n heterostructures with good interface properties and large-area uniformity can be fabricated using SAB. [ABSTRACT FROM AUTHOR]

The direct integrating of GaAs and diamond is achieved at room temperature via a surface activated bonding method. An ultrathin crystal defect layer composed of GaAs and diamond was formed at the bonding interface. The thickness of the GaAs and diamond crystal defect layers was determined to be 0.4 and 1.6 nm, respectively. After annealing at 400 °C, no changes were observed in the thickness of the crystal defect layer and the interfacial structure. The thermal characterization of the transmission line model (TLM) patterns formed on the GaAs layer bonded to diamond and sapphire substrates is demonstrated. The thermal resistance of the GaAs TLM patterns formed on the diamond and sapphire substrates was determined to be 6 and 34.9 K/W, respectively. The GaAs TLM patterns formed on the diamond showed an excellent heat dissipation property due to the high thermal conductivity of diamond. Unlabelled Image • The direct bonding of GaAs and diamond at room temperature. • An ultrathin crystal defect layer formed at the bonding interface. • The bonding interface demonstrated a high thermal stability. • The GaAs TLM patterns formed on the diamond showed an excellent heat dissipation property. [ABSTRACT FROM AUTHOR]

• The mechanism of surface activated bonding (SAB) at low temperature is clarified. • Atomic diffusion in the bonding process is a key concept to make tough interfaces. • The diffusion would be assisted by the defects introduced in the activation process. • There is a trade-off relationship between bonding strength and electronic properties. Bonding mechanism at room temperature (RT) in GaAs/Si heterointerfaces fabricated by surface-activated bonding (SAB) is examined using cross-sectional scanning transmission electron microscopy combined with low-temperature focused ion beam and time-of-flight secondary ion mass spectrometry. In the bonding process at RT, atomic intermixing at the interfaces, presumably due to the transient enhanced diffusion assisted by the point defects introduced in the surface activation process, is confirmed. The defect-assisted atomic diffusion at the interfaces, as well as the formation of atomically clean and activated surfaces, would be the key concept of SAB, by which we can create tough heterointerfaces at RT. Meanwhile, the defects on the activated surfaces would degrade the interface resistance. The degraded properties can be recovered by an appropriate annealing after the SAB processes, although the atomistic structure around the heterointerfaces would be modified during the annealing. By controlling SAB and subsequent annealing conditions, we can obtain low-resistance heterointerfaces via the optimization of the trade-off relationship between the chemical bonding strength and the electronic properties, determined by the activated surfaces before bonding. [ABSTRACT FROM AUTHOR]

Abstract: This study describes that CuO nanowires were synthesized by heating copper powder in air. CuO nanowires can grow on the surface of the spherical CuO/Cu2O. The samples were heated in the air within the temperature range from 300°C to 700°C. The diameter and density of nanowires can be controlled by the heating temperature and time. The products were examined by XRD, SEM and TEM. The morphology, composition, and crystal structure show that the single crystalline CuO nanowires can be synthesized on the surface of the spherical CuO/Cu2O and CuO was the only product when the sample was heated at the temperature of 500°C and higher. [Copyright &y& Elsevier]

• Serum HE4 was elevated in patients with pulmonary tuberculosis. • Serum HE4 associated with the severity of disease. • Serum HE4 could be a clinical biomarker for patients with pulmonary tuberculosis. Human epididymis protein 4 (HE4) has been recognized as a biomarker which elevated in various diseases. The aim of this study was to evaluate the value of serum HE4 in pulmonary tuberculosis (PTB). Serum HE4 concentrations were determined in 127 PTB, 88 chronic bronchitis (CHB), and 105 healthy control subjects by chemiluminescent microparticle immunoassay. Receiver operating characteristic (ROC) curves and Spearman's correlation analysis were performed for investigating value of HE4. Serum HE4 concentrations were significantly increased in PTB (62.8 pmol/L, IQR 45.8–90.7), compared with that of CHB (50.2 pmol/L, IQR 42.3–64.3, P = 0.0002) and normal control (35.4 pmol/L, IQR 31.1–42.9, P < 0.0001). ROC curve suggested that the AUC of HE4 used to discriminate PTB from CHB was 0.647 (95% CI, 0.574–0.719), with the cutoff value, sensitivity, specificity, PPV, and NPV at 71.9 pmol/L, 0.417, 0.852, 0.672 and 0.543, respectively. Meanwhile, compared with mild to moderated PTB, the levels of HE4 in advanced PTB were significantly elevated (75.8 vs. 57.7 pmol/L, P = 0.0052). What's more, the levels of HE4 in PTB were found to be significantly associated with the albumin, CRP, and cavity (r = −0.2996, P = 0.0006, r = 0.265, P = 0.0026, r = 0.4699, P < 0.0001, respectively). Elevated serum HE4 concentration could be used as a biomarker for the diagnosis and assessment of disease severity in PTB. [ABSTRACT FROM AUTHOR]

Highlights • A transition layer was formed at the interface by irradiation of Ar FAB. • The thickness of buried oxide at the interface was quantitatively estimated. • The interfaces were found to be in the meta-stable states. Abstract Hard X-ray photoelectron spectroscopy measurements are performed on ≈10-nm-thick GaAs film/Si substrate junctions fabricated by the surface activated bonding and selective wet etching. The chemical shifts of Ga O and As O signals in Ga 2p 3/2 and As 2p 3/2 core spectra indicate that oxides are formed in a part of GaAs films neighboring GaAs/Si interfaces due to the surface activation process. Analyses of Ga O and As O signals show that the thickness of such buried oxides is decreased due to a post-bonding annealing at temperatures up to 400 °C. This means that the electrical properties of bonding interfaces, which are in the meta-stable states, are improved by the annealing. The thickness of oxides is different from that of amorphous-like transition layers at the GaAs/Si interfaces observed by transmission electron microscopy. [ABSTRACT FROM AUTHOR]

The article offers information on the article "Layered Rare Earth Hydroxides: Structural Aspects and Photoluminescence Properties" by J. Liang and others, published in the periodical "Structure and Bonding" in 2016.

Malnutrition and inflammation are associated with mortality in peritoneal dialysis (PD) patients. Serum albumin and non-high-density lipoprotein cholesterol (non-HDL-C) are independently associated with mortality in PD patients. Combining albumin and non-HDL-C with mortality may be more plausible in clinical practice. This retrospective cohort study included 1954 Chinese PD patients from 1 January 2009 to 31 December 2016. Kaplan–Meier curve was used to determine the relationship between albumin to non-HDL-C ratio and all-cause mortality. Cox regression analysis was applied to assess the independent predictive value while adjusting for confounding factors. Competitive risk analysis was used to examine the effects of other outcomes on all-cause mortality prognosis. In the 33-month follow-up period, there were 538 all-cause deaths. Kaplan–Meier analysis presented significant differences in all-cause mortality. Multivariate Cox regression showed that the risk of all-cause mortality was lower in the moderate group (9.36–12.79) (HR, 0.731; 95% CI, 0.593–0.902, p = 0.004) and the highest group (>12.79) (HR, 0.705; 95% CI, 0.565–0.879, p = 0.002) compared to the lowest group (≤9.36). Competitive risk analysis revealed significant differences for all-cause mortality (p < 0.001), while there was no statistical significance for other competing events. Low albumin to non-HDL-C ratio was associated with a high risk of all-cause mortality in PD patients. It may serve as a potential prognostic biomarker in PD patients. [ABSTRACT FROM AUTHOR]

Review: 52 refs. [ABSTRACT FROM AUTHOR]

The direct integration of GaN with Si can boost great potential for low-cost, large-scale, and high-power device applications. However, it is still challengeable to directly grow GaN on Si without using thick strain relief buffer layers due to their large lattice and thermal-expansion-coefficient mismatches. In this work, a GaN/Si heterointerface without any buffer layer is fabricated at room temperature via surface activated bonding (SAB). The residual stress states and interfacial microstructures of GaN/Si heterostructures were systematically investigated through micro-Raman spectroscopy and transmission electron microscopy. Compared to the large compressive stress that existed in GaN layers grown on Si by metalorganic chemical vapor deposition, a significantly relaxed and uniform small tensile stress was observed in GaN layers bonded to Si by SAB; this is mainly ascribed to the amorphous layer formed at the bonding interface. In addition, the interfacial microstructure and stress states of bonded GaN/Si heterointerfaces was found to be significantly tuned by appropriate thermal annealing. With increasing annealing temperature, the amorphous interlayer formed at the as-bonded interface gradually transforms into a thin crystallized interlayer without any observable defects even after annealing at 1000 °C, while the interlayer stresses at both GaN layer and Si monotonically change due to the interfacial re-crystallization. This work moves an important step forward directly integrating GaN to the present Si CMOS technology with high quality thin interfaces and brings great promises for wafer-scale low-cost fabrication of GaN electronics. [ABSTRACT FROM AUTHOR]

Left ventricular (LV) diastolic function was found to be a significant predictor of cardiovascular events and general mortality in dialysis. Studies have indicated that dialysate calcium concentrations were significantly associated with cardiac function. However, the relationship between low calcium dialysate and LV diastolic function has not been clear. The aim of this study was to investigate the influence of low calcium dialysate on cardiac function in peritoneal dialysis (PD) patients. A total of 60 PD patients were enrolled in this study, with a calcium content of the PD solution of 1.25 mmol/L in 30 patients (low-calcium group) and 1.75 mmol/L in 30 patients (standard-calcium group). Standard M-mode and two-dimensional ultrasound measurements were applied to detect the cardiac function. After 12-month follow-up, we found no significant difference in blood pressure, calcium, phosphorus, parathyroid hormone (PTH), etc., between the two groups. Residual renal function (RRF), which is associated with LV cardiac function, was significantly decreased in the standard-calcium group compared with the low-calcium group (5.64 ± 3.23 vs. 9.38 ± 3.17,p = .001). Compared with the low-calcium group,Emax(peak early diastolic velocity) andAmax(peak late diastolic velocity) were significantly decreased (p < .05), whereas myocardial performance index (MPI) was obviously increased in standard-calcium group (9.69 ± 2.71 vs. 7.75 ± 0.93,p < .05). In conclusion, our data suggest that low calcium dialysate treatment is significantly associated with better LV diastolic function. [ABSTRACT FROM AUTHOR]

A large number of studies have shown that proton pump inhibitors (PPIs) are associated with infection events. Therefore, we retrospectively evaluated the association of PPI therapy with the occurrence of first pneumonia and peritoneal dialysis(PD)-related peritonitis events in the maintenance PD patients. We collected PD patients in two large hospitals from January 1, 2012 to December 31, 2016, and divided them into the PPI group and the non-PPI group. Multivariate Cox proportional hazards models were applied to evaluate the cumulative incidence and hazard ratios (HRs). Inverse probability of treatment weight (IPTW) method was used to adjust for covariate imbalance between the two groups and further confirm our findings. Finally, 656 PD patients were included for data analysis, and the results showed that PPI usage was associated with an increased risk of pneumonia [HR 1.71; 95% CI 1.06-2.76; p = 0.027] and peritonitis [HR 1.73; 95% CI 1.24-2.40; p = 0.001]. IPTW-adjusted HRs for the association of PPIs with pneumonia and peritonitis were 1.58 (95% CI:1.18-2.12; p = 0.002) and 2.33 (95% CI:1.91-2.85; p < 0.001), respectively. Moreover, the competitive risk model proved that under the conditions of competition for other events(including transfer to hemodialysis therapy, kidney transplant, transfer from our research center, loss to follow-up, and death), the differences in endpoints events between the two groups were still statistically significant (p = 0.009, p < 0.001, respectively). PPIs was associated with an increased risk of first pneumonia and PD-related peritonitis events in PD patients, which reminds clinicians to be cautious when prescribing acid-suppressing drugs for PD patients. [ABSTRACT FROM AUTHOR]

A long period of inappropriate proton pump inhibitors (PPI) treatment has been proved to be associated with adverse prognosis in general population and hemodialysis patients. This study was conducted to clarify the impact of PPI usage on mortality and adverse cardiovascular (CV) events in peritoneal dialysis (PD) patients. This is a retrospective study. A total of 905 patients were enrolled from two PD centers, including 211 patients on PPI treatment and 618 patients not on PPIs. Kaplan–Meier curves were used to identify the incidence of adverse outcomes. Multivariate Cox regression models and inverse probability of treatment weighting (IPTW) were applied to analyze hazard ratios (HRs) for adverse outcomes. During follow-up, 162 deaths and 102 CV events were recorded. Kaplan–Meier curve demonstrated all-cause mortality (log-rank test p =.018) and CV events (log-rank test p =.024) were significantly higher in PPI usage group. Multivariate Cox regression models and IPTW showed that PPI usage was an indicator for all-cause mortality (HR = 1.35, 95%CI = 1.09–1.67, p =.006) and CV events (HR = 1.78, 95%CI = 1.35–2.32, p <.001). PPI usage is associated with higher all-cause mortality and CV events in PD patients. Clinicians are supposed to be more careful when using PPI and need to master the indications more rigorously in patients receiving PD treatment. [ABSTRACT FROM AUTHOR]

Background: Gastrointestinal bleeding (GIB) is widespread in patients with impaired renal function. Whether angiotensin-converting enzyme inhibitors/angiotensin II receptor blockers (ACEi/ARBs) potentially take a crucial role in avoiding GIB incidence among peritoneal dialysis (PD) patients is unknown. Methods: Overall, 734 PD patients were enrolled after using propensity score matching. Kaplan–Meier analysis and COX regression were used to explore correlation between ACEi/ARBs and GIB. Competitive risk model was aimed to identify whether other events were confounding factors. Forest plot was applied to assess the influence of ACEI/ARBs on GIB incidence in different groups. Results: During 8-year follow-up, 89 (12.13%) cases of GIB were recorded. Kaplan–Meier analysis revealed that the incidence of GIB among patients taking ACEi/ARBs was lower than those subjects who had not (log rank = 6.442, P = 0.011). After adjusted different confounding factors, administration of ACEi/ARBs was associated with lowered GIB incidence (adjusted HR = 0.49, 95% CI 0.32–0.77, P = 0.002). In competitive risk model, considering of other events, the incidence of GIB in two groups was still statistically significant (P = 0.010). Subgroup analysis showed ACEi/ARBs taking impeded GIB in the ≥ 60 age group (HR = 0.52, 95% CI 0.28–0.98, P = 0.040). Conclusion: PD patients who were submitted to ACEi/ARBs inclined to have a lower risk for GIB. In this regard, ACEi/ARBs offered a promising choice to GIB. [ABSTRACT FROM AUTHOR]

Abstract: Uniform ZnO urchin-like architectures were synthesized by hydrothermal decomposing Zn(OH)4 2− precursor with the assistance of dodecylamine (DDA) at 180°C for 12h. FESEM images display that the ZnO 3D urchin-like architectures are constructed of well-aligned ZnO nanorods with diameters of 50–80nm and lengths up to 2μm. Room temperature photoluminescence spectra of ZnO 3D architectures show an intensive ultraviolet emission at ∼385nm and weak green emission, which indicated their high structural and optical quality. [Copyright &y& Elsevier]

CdS nanowires with an average diameter of 25 nm and lengths of 20−40 μm have been solvothermally synthesized in a mixed solvent of ethylenediamine and dodecanethiol at 180 °C. The time-dependent examinations reveal that the formation process of CdS nanowires involves two sequential processes: a short-period solid−solid transformation process in the initial stage and a long-period Ostwald ripening process. The effect of both the volume ratios between the two components of the solvent and the reaction temperatures on the nanowire growth has also been investigated in detail. The results of the photoluminescence and UV−vis spectroscopy measurements reveal that the as-prepared CdS nanowires show a quantum confinement effect. [ABSTRACT FROM AUTHOR]

Abstract: A low-temperature solution-phase method has been demonstrated for the synthesis of uniform nanorods of Bi2S3 with diameter of 18nm and length of below 200nm. Transmission electron microscopy (TEM), selected-area electron diffraction (SAED), and X-ray diffraction (XRD) studies revealed that these nanorods were grown from a colloidal dispersion of amorphous Bi2S3 particles, which was first formed through a thermal reaction between Bi-thiol complexes Bi(SC12)3 and thioacetamide (TAA) in a pure dodecanethiol (C12SH) solvent at a temperature of 95°C. Based on these studies, the growth mechanism of Bi2S3 nanorods was properly proposed. [Copyright &y& Elsevier]

Background: Although neutrophil-to-lymphocyte ratio (NLR) is closely associated with pneumonia in the general population, its relationship is unclear in peritoneal dialysis (PD) patients. Methods: This is a cohort study consisting of 739 PD patients and dividing into two groups. Kaplan–Meier curves were applied to observe the incidence of the first occurrence of pneumonia, competitive risk analysis was conducted to compare whether there was a significant difference in each NLR group in the presence of other competing events, multivariable COX regression analysis was used to evaluate the hazard ratios (HRs), as well as forest plot was used to analyze the relationship between NLR and the first occurrence of pneumonia in different subgroups. Results: Of all the patients, 116 cases of first-time pneumonia were recorded. The first-time pneumonia incidence rate was 71.67/1000 patient-years in high NLR group, which was markedly higher than that of 45.81/1000 patient-years in low NLR group. Kaplan–Meier curves indicated significant differences in the incidence of the first occurrence of pneumonia between two groups (log-rank test p = 0.015). The competitive risk model suggested a significant difference in the cumulative incidence of first pneumonia between the two groups (p = 0.032). Compared to low NLR group, adjusted Cox model showed that high NLR group was associated with increased risk of pneumonia incidence (HR, 1.51; 95% CI 1.04–2.21; p = 0.031). Forest plot showed no interaction was found in subgroups. Conclusions: The risk of pneumonia was significantly increasing in PD patients with high NLR, which may have a certain guiding significance for the clinic. [ABSTRACT FROM AUTHOR]

Introduction: Though neutrophil/lymphocyte ratio (NLR) level appears to be related with stroke events in general population, its relationship with stroke in peritoneal dialysis (PD) patients is still uncertain. This study aims to investigate the association between NLR and the first occurrence of stroke in PD patients.Methods: In this retrospective cohort study, 1507 PD patients were enrolled from four centers in China and stratified into tertiles of NLR levels. The incidence of the first occurrence of stroke was analyzed by Kaplan-Meier cumulative incidence curve among different NLR tertiles, competing risk analysis was used to calculate the incidence of the first occurrence of stroke in the presence of competing risk of other events, multivariable COX regression analysis was performed to estimate the hazard ratios (HRs) for the first occurrence of stroke, as well as forest plot was utilized to describe the relationship between NLR and the first occurrence of stroke in different subgroups.Results: During follow-up, 84 new-onset stroke events were recorded. Kaplan-Meier cumulative incidence curves showed significant differences in the incidence of the first occurrence of stroke among three groups (log-rank test: P < .001). In competing risk analysis, the cumulative incidence curves for tertiles of NLR levels were highly significant for the first occurrence of stroke (P < .001), but they were not statistically different for the occurrence of other events. Compared to the lowest tertile of NLR level, the highest tertile was associated with increased risk of the first occurrence of stroke in the adjusted Cox model (HR = 2.39, 95% CI: 1.37 to 4.15; P < .05). As for forest plot, there was no interaction in all subgroups.Conclusion: High NLR was an independent risk factor for the first occurrence of stroke in PD patients. [ABSTRACT FROM AUTHOR]

Background. Neutrophil to lymphocyte ratio (NLR) is a new inflammatory marker; the relationship between NLR and adverse cardiovascular (CV) prognosis has been gradually emphasized in the general population. However, their association in peritoneal dialysis (PD) patients remains unclear. Methods. From January 1, 2010, to May 31, 2017, a total of 1652 patients were recruited. NLR was categorized in triplicates: NLR ≤ 2.74 , 2.74 < NLR ≤ 3.96 , and NLR > 3.96. Kaplan-Meier cumulative incidence curve and multivariable COX regression analysis were used to determine the relationship between NLR and the incidence of adverse CV outcome, while a competitive risk model was applied to assess the effects of other outcomes on adverse CV prognosis. Besides, forest plot was investigated to analyze the adverse CV prognosis in different subgroups. Results. During follow-up, 213 new-onset CV events and 153 CV disease (CVD) deaths were recorded. Multivariable COX regression models showed that the highest tertile of NLR level was associated with increased risk of CV events (HR = 1.39 , 95 % CI = 1.01 ‐ 1.93 , P = 0.046) and CVD mortality (HR = 1.81 , 95 % CI = 1.22 ‐ 2.69 , P = 0.003), while compared to the lowest tertile. Competitive risk models showed that the differences in CV event (P < 0.001) and CVD mortality (P = 0.004) among different NLR groups were still significant while excluding the effects of other outcomes. In subgroups, with each 1 increased in the NLR level, adjusted HR of new-onset CV event was 2.02 (95 % CI = 1.26 − 3.23 , P = 0.003) and CVD mortality was 2.98 (95 % CI = 1.58 − 5.62 , P = 0.001) in the younger group (age < 60 years). Conclusions. NLR is an independent risk factor for adverse CV prognosis in PD patients younger than 60 years old. [ABSTRACT FROM AUTHOR]

This study aims to fabricate copper oxide (CuO) nanowires by annealing a copper film formed on a charged film of fluorine-doped tin oxide (FTO). However, from the viewpoint of stress and growth of nanowires, it is difficult to mass-produce CuO nanowires on the entire region of the macro area on the plane substrate. In the proposed study, this was made possible by modifying the substrate's structure. [ABSTRACT FROM AUTHOR]

Novel graphene oxide double-shell hollow-spheres decorated with Mn 3 O 4 nanocrystals were synthesized via a facile solvothermal self-assembly method. They had the uniform outer diameter in ca . 100 nm and the thickness of each shell in ca . 5 nm. The electrochemical supercapacitive properties of the prepared double-shell hollow-sphere composites showed the capacitance of 225 F g −1 at the scan rate of 5 mV s −1 , high electrochemical stability that retained about 99.5% capacitance after cycling 6000 times, and the energy density as high as 34.1 Wh kg −1 at the power density of 251 W kg −1 . These performances were superior to those of most reported planar graphene-Mn 3 O 4 nanocomposites as well as pure Mn 3 O 4 nanocrystals. [ABSTRACT FROM AUTHOR]

Background This study investigated the clinical value of HE4 in distinguishing malignant and benign gynecological diseases of patients in southern China. Methods Preoperative serum CA125 and HE4 concentrations were tested in samples of women with malignant or benign gynecological diseases using fully automated methods (Abbott ARCHITECT) and validated cutoff values. Results For the discrimination of ovarian cancer from benign gynecological diseases, in premenopausal women, the sensitivity and specificity were 89.8% and 67.5% for CA125, 68.5% and 97.8% for HE4, and 88.9% and 78.6% for ROMA, whereas in postmenopausal women, the sensitivity and specificity were 86.6% and 88.9% for CA125, 57.3% and 100% for HE4, and 85.4% and 94.4% for ROMA. For the discrimination of endometrial cancer from benign gynecological diseases, in premenopausal women, the sensitivity and specificity were 20.3% and 67.5% for CA125, 56.8% and 97.8% for HE4, and 74.3% and 78.6% for ROMA, whereas in postmenopausal women, the sensitivity and specificity were 17.8% and 88.9% for CA125, 31.5% and 100% for HE4, and 32.9% and 94.4% for ROMA. Conclusions We showed that HE4 had better specificity than CA125 in discriminating ovarian cancer, and endometrial cancer from benign gynecological diseases in southern China population. [ABSTRACT FROM AUTHOR]

We evaluated the current–voltage (I-V) and temperature-dependent I-V characteristics of n+-Si/p-diamond heterojunction diodes (HDs) fabricated by using surface activated bonding and Ru/p-diamond Schottky barrier diodes (SBDs). Both types of diodes were fabricated on diamond surface that was activated using a fast atom beam of Ar. Their room-temperature reverse-bias characteristics were explained using the trap-assisted tunneling model, wherein the surface activation process affects the carrier transport across the Si/diamond and Ru/diamond interfaces. In addition, we compared the electrical properties of n+-Si/p-diamond HDs and Ru/p-diamond SBDs with those of previously fabricated p+-Si/p-diamond HDs and Al/p-diamond SBDs. A correlation between the barrier heights and the work function of the contact materials (n+-Si, p+-Si, and Ru) was observed. [Display omitted] • We fabricated n+-Si/p-diamond heterojunction diodes (HDs), and demonstrated their diode characteristics. • The reverse-bias characteristics of HDs were explained by the trap-assisted tunneling model. • The S factors of Si/diamond and Ru/diamond interfaces was as high as ≈0.7 after annealing at 703 K. • The partially "pinning-free" interfaces were formed thank to Ar beam irradiation. [ABSTRACT FROM AUTHOR]

Podocyte injury is a vital factor, which induces massive proteinuria. Studies have shown that tacrolimus (TAC) protected podocyte via stabilizing cytoskeleton. Our latest study indicates that calcineurin binding protein 1 (Cabin1) undergoes nuclear translocation during podocytes injury. Whether TAC targets on Cabin1 during podocyte injury is still not clear. This study establishes non-immunological proteinuric model. To observe the effect of the treatment of TAC on Cabin1 expression in 5/6 nephrectomized rats. Sprague–Dawley rats were injected with TAC (0.2 mg/kg/day) for 4–8 weeks after 5/6 nephrectomy. Then, rats were sacrificed in the eighth week after operation, renal tissues were processed for morphological studies under light and electrical microscope. Cabin1 expression and distribution were detected by western blot and indirect immunofluorescence staining. In 5/6 nephrectomized rats, urinary protein excretion reached 90.2 ± 30.1 mg/24 h, glomerular sclerosis index and tubulointerstitial fibrosis score were significantly increased, and widespread of podocyte foot processes fusion was found. Moreover, Cabin1 protein expression was markedly increased, and its distribution became much more obviously in podocytes nuclei. In TAC treated rats, urinary protein excretion significantly decreased (44.9 ± 22.5 mg/24 h), glomerular sclerosis and tubulointerstitial fibrosis were alleviated, and podocyte foot processes fusion was inhibited. Furthermore, TAC alleviated the increased protein expression and abnormal distribution of Cabin1. In conclusion, TAC restores podocyte injury and stabilizes the expression of Cabin1. Cabin1 may become a new target to demonstrate the mechanism of TAC in podocyte injury. [ABSTRACT FROM AUTHOR]

Context: Podocyte injury is related to increasing proteinuria and contributes to the progression of kidney disease. Calcineurin binding protein 1 (Cabin1) is a repressor of myocyte enhancer factor 2 (MEF2) and calcineurin-mediated transcription in the immune system. Moreover, Cabin1 interacts with p53 and negatively regulates p53 in tumor cells. However, its function in kidney is unknown.Objective: To explore the exact localization of Cabin1 in glomeruli, as well as the relationship between Cabin1 and podocyte injury.Methods: Sprague–Dawley rats were sacrificed to observe the localization and protein expression of Cabin1 in the kidney. Cabin1 localization and protein expression were detected by immunofluorescence staining and western blot, respectively. Mouse podocytes were cultivated at 33 °C to propagate, then cells were transferred to an incubator at 37 °C to allow differentiation. Differentiated podocytes were stimulated by angiotensin II (AngII) or AngII plus tacrolimus. Cells were harvested to detect the localization and protein expression of Cabin1. Cytoplasmic and nuclear protein were separated by protein extraction kit.Results: Cabin1 mainly localized in the nuclei of glomerular innate cells, it colocalized with WT-1 in podocytes nuclei. Western bolt showed Cabin1 protein remarkably expressed in renal cortex. AngII-induced Cabin1 nuclear protein significantly increased, accompanied by cytoskeleton disruption in cultured mouse podocytes.Conclusion: Cabin1 localizes in glomerular podocytes. AngII induces nuclear translocation of Cabin1 in cultured podocytes. [ABSTRACT FROM AUTHOR]

We fabricate p+-Si/p-diamond heterojunction diodes by using surface-activated bonding and examine the electrical properties of Si/diamond interfaces by measuring current-voltage and current-voltage-temperature characteristics. We find that the electrical properties of heterojunction diodes are improved by post-bonding annealing at temperatures up to 873 K in terms of the ideality factor and reverse-bias current. Additionally, fabricated diodes also reveal thermal stability better than that of Cu/diamond Schottky diodes in terms of the rectification factor. The barrier height at Si/diamond bonding interfaces annealed at 873 K is estimated to be 0.55 and 0.66 eV by analyzing the relationship between the saturation current density and temperature and the reverse-bias characteristics at room temperature, respectively. These values are close to that obtained by assuming that no offset is formed in the vacuum level across the Si/diamond bonding interfaces (0.36 eV). [Display omitted] • We fabricated p+-Si/p-diamond heterojunction diodes using surface-activated bonding and demonstrated their characteristics. • The characteristics of Si/diamond heterojunction diodes were improved by means of the post-bonding annealing. • A high therm al stability of Si/diamond heterojunction diodes was shown. • The band lineup across the Si/diamond bonding interfaces was extracted from measurements. [ABSTRACT FROM AUTHOR]

We report structure analysis of a new family of rare-earth hydroxides Ln2(OH)4SO4.2H2O (Ln = Pr, Nd, Sm, Eu, Gd, Tb) from synchrotron X-ray and electron diffraction data. Rietveld profile analysis revealed that all members were isostructural and crystallized in a face-centered monoclinic system A2/m (No. 12), in which the monoclinic angles were approximately equal to the right angle, varying from 90.387(1)° for Pr sample to 90.0718(3)° for Tb sample. The structure consisted of LnO9 polyhedra connected by μ3-hydroxyl groups and μ2-water molecules, forming a corrugated two-dimensional layer, which was pillared by bidentated sulfate ions. This series of compounds had a supercell a' = 2a, b' = 2b because of the local orientation ordering of SO42-. Structural features along the series, such as unit-cell parameters and average Ln-O distances, represented a progressive contraction associated with the shrinking radius of the lanthanide cations from Pr to Tb. [ABSTRACT FROM AUTHOR]

Abstract: Large-scale copper sulfide polycrystalline nanorods have been solvothermally synthesized through a Cu(acac)2 precursor decomposition and reaction route. X-ray diffraction (XRD) showed that the product was hexagonal phase CuS with lattice constants of a =3.795Å and c =16.42Å. Field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) investigated the morphology of the product under the different growth conditions. PL spectra indicated that the rod-shaped product had emission peaks at 414 and 437.5nm when the excitation wavelength was 371.5nm, but the CuS dendrite did not demonstrate emission peaks at the same condition. A mechanism of Cu(acac)2 micronrods decomposition and reaction with CS2 in situ was suggested based on the TEM observation. [Copyright &y& Elsevier]

By using the sacrificial layer (SL) etching, GaAs substrates are separated from III–V epi substrate//Si substrate junctions that are made by surface activated bonding (SAB) technologies. The post-bonding low-temperature (300- ∘ C) annealing plays an essential role in achieving a promising (∼ 90%) bonding yield. The effects of the post-bonding annealing are investigated by hard X-ray photoemission spectroscopy and current–voltage measurements of GaAs//Si bonding interfaces. It is found that the concentration of oxygen atoms at interfaces is reduced and the resistance decreases to 1.6–2.1 m Ω cm 2 by the low-temperature annealing. Aluminum fluoride complexes are not observed by X-ray photoelectron spectroscopy on the exposed surfaces of separated GaAs substrates. The roughness average of the surfaces is ≈ 0.25–0.30 nm. The characteristics of double junction cells fabricated on the GaAs//Si junctions prepared by the SL etching are almost the same as those of cells fabricated by dissolving GaAs substrates after bonding. These results indicate that multijunction cells could be fabricated in a process sequence compatible with reuse of GaAs substrates by combining the SL etching and SAB. • III–V//Si junctions with a ∼ 90% of bonding yield is achieved in III–V//Si junctions prepared by direct wafer bonding and subsequent epitaxial lift-off. • A post-bonding annealing plays an essential role in realizing interfaces with an enough tolerance against HF-based solution for sacrificial layer etching. • The epitaxial lift-off process causes no influence on performances of MJ cells. [ABSTRACT FROM AUTHOR]