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30 results on '"Liang-Hui, Chen"'

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1. A Highly Stable Ortho ‐Ketoenamine Covalent Organic Framework with Balanced Hydrophilic and Hydrophobic Sites for Atmospheric Water Harvesting

3. Theoretical analysis of modal gain in p‐doped 1.3 μm InAs/GaAs quantum dot lasers

4. ETFDH mutations, CoQ10 levels, and respiratory chain activities in patients with riboflavin-responsive multiple acyl-CoA dehydrogenase deficiency

5. Maple syrup urine disease in the Austronesian aboriginal tribe Paiwan of Taiwan: a novel DBT (E2) gene 4.7 kb founder deletion caused by a nonhomologous recombination between LINE-1 and Alu and the carrier-frequency determination

6. [Untitled]

7. Temperature Sensitivity Dependence on Cavity Length in p-Type Doped and Undoped 1.3-$\mu$m InAs–GaAs Quantum-Dot Lasers

8. High brightness InAs/GaAs quantum dot tapered laser at 1.3 μm with high temperature stability

9. Clinical manifestations in children with mitochondrial diseases

10. The study of novel high brightness 620 nm AlGaInP light emitting diodes

11. Type I glutaric aciduria: phenotypes and genotypes in 5 Taiwanese children

12. Riboflavin-responsive glutaric aciduria type II with recurrent pancreatitis

13. Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours

15. Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency

16. Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating

18. Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature

23. Maple syrup urine disease in the Austronesian aboriginal tribe Paiwan of Taiwan: a novel DBT (E2) gene 4.7?kb founder deletion caused by a nonhomologous recombination between LINE-1 and Alu and the carrier-frequency determination.

24. Photoluminescence investigation in N type InGaAsP heterostructure

25. High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers.

26. Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating.

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