279 results on '"Liao, M.-H."'
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2. 4-Layer Wafer on Wafer Stacking Demonstration with Face to Face/Face to Back Stacked Flexibility Using Hybrid Bond/TSV-Middle for Various 3D Integration
3. The Analysis of Multiwall Carbon Nanotubes as Through Silicon Via by Equivalent Circuit Model at Different Operating Temperatures in Multilayers Stacking Scheme
4. Fatigue Mechanism of Antiferroelectric Hf$_{\text{0.1}}$Zr$_{\text{0.9}}$O$_{\text{2}}$ Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM
5. Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals
6. The demonstration of low-temperature (350 °C) grown carbon nano-tubes for the applications of through silicon via in 3D stacking and power-via
7. A > 64 Multiple States and > 210 TOPS/W High Efficient Computing by Monolithic Si/CAAC-IGZO + Super-Lattice ZrO2/Al2 O3/ZrO2 for Ultra-Low Power Edge AI Application
8. Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO2 Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance
9. Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture
10. Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf₀.₁Zr₀.₉O₂
11. The Investigation of Electrical Characteristics for Carbon Nano-Tubes as Through Silicon Via in Multi-Layer Stacking Scheme With an Optimized Structure
12. Negative Schottky barrier height and surface inhomogeneity in n-silicon M–I–S structures
13. The novel chamber hardware design to improve the thin film deposition quality in both 12″ (300 mm) and 18″ (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique
14. Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions study
15. The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technology
16. Novel Analog in-Memory Compute with > 1 nA Current/Cell and 143.9 TOPS/W Enabled by Monolithic Normally-off Zn-rich CAAC-IGZO FET-on-Si CMOS Technology
17. Nanoparticles prepared from the water extract of Gusuibu (Drynaria fortunei J. Sm.) protects osteoblasts against insults and promotes cell maturation
18. Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM
19. The dependence of the performance of strained NMOSFETs on channel width
20. The demonstration of Carbon Nano-Tubes (CNTs) as a promising high Aspect Ratio (>25) Through Silicon Vias (TSVs) material for the vertical connection in the high dense 3DICs
21. Ferroelectric HfZrO2 With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training
22. Tetramethylpyrazine prevents inducible NO synthase expression and improves survival in rodent models of endotoxic shock
23. Genetic identification of Chinese drug materials in yams (Dioscorea spp.) by RAPD analysis
24. The real demonstration of High-Quality Carbon Nano-Tubes (CNTs) as the electrical connection for the potential application in a vertical 3D integrated technology
25. The Demonstration of Carbon Nanotubes (CNTs) as Flip-Chip Connections in 3-D Integrated Circuits With an Ultralow Connection Resistance
26. Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory
27. The Demonstration of 3-D Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6Thermoelectric Devices by Ionized Sputter System
28. The Process and Optoelectronic Characterization of Ge-on-Insulator
29. Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs
30. The Development of a Dynamic Model to Investigate the Dielectric Layer Thickness Effect for the Device Performance in Triboelectric Nanogenerators
31. Analysis of axial cracks in hollow cylinders subjected to thermal shock by using the thermal weight function method
32. Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO2 Capacitor with Molybdenum Capping Electrode
33. Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 With High Data Retention and Read Endurance for 1T Memory Applications
34. Sub-60mV/dec Subthreshold Swing on Reliability of Ferroelectric HfZrOx Negative-Capacitacne FETs with DC Sweep and AC Stress Cycles
35. In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact
36. Ferroelectric HfZrO2 With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training.
37. Steep switch-off of In0.18Al0.82N/AlN/GaN on Si MIS-HEMT
38. Ferroelectric Characteristics of Ultra-thin Hf1-xZrxO2 Gate Stack and 1T Memory Operation Applications
39. Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)
40. Thickness dependence of electrical conductivity and thermo-electric power of Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermo-electric devices
41. The systematic study and simulation modeling on nano-level dislocation edge stress effects.
42. A novel stress design for the type-II hetero-junction solar cell with superior performance.
43. Ferroelectric Al:HfO2 negative capacitance FETs
44. Research on unmanned electro-acoustic composite dust concentration monitoring network system based on C-MBUS
45. The demonstration of the Si nano-tube device with the promising short channel control.
46. 2.0 μm electroluminescence from Si/Si0.2Ge0.8 type II heterojunctions.
47. The intermixing and strain effects on electroluminescence of SiGe dots.
48. Buckling characteristics of SiGe layers on viscous oxide.
49. The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages
50. Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide
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