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This study investigates InSnZnO thin films deposited using mist chemical vapor deposition with different nitrogen (N 2)/oxygen (O 2) ratios of carrier gases. The crystallinity and bandgap of InSnZnO are not affected by the carrier gases; however, the content of the oxygen deficiency of the InSnZnO thin films reduces when the N 2 /O 2 mixed carrier gases have higher oxygen ratio. The InSnZnO thin-film transistor (TFT) shows the highest field-effect mobility (65.04 cm2V−1s−1) when N 2 is used as the carrier gas to deposit the InSnZnO thin film. Although the field-effect mobility of the InSnZnO TFT that uses the N 2 (60 vol%)/O 2 (40 vol%) mixed carrier gas to deposit InSnZnO thin film is the lowest (47.65 cm2V−1s−1), it is still higher than those of the amorphous InGaZnO thin film transistors (∼10 cm2V−1s−1). Furthermore, the InSnZnO TFT using the N 2 (60 vol%)/O 2 (40 vol%) mixed carrier gas to deposit InSnZnO thin film exhibits the steepest subthreshold slope (102 mV/dec), the largest on/off current ratio (4.6 × 107), and the most stable electrical characteristics after the negative bias stress test for 10,800 s. [ABSTRACT FROM AUTHOR]

The urban heat island effect in cities has become an important problem in relation to not only urban climate but also public health and urban planning. Tainan, which located in Southern Taiwan, is a compact city with intense development. Therefore, this study investigated the urban thermal condition by employing a high-density street-level air temperature observation network (HiSAN). A total of 100 measurement points were set in various urban development areas. The geographic factors in Tainan can be used for indicating the relationship between thermal conditions and urban built environments to comprehensively compare the approaches, such as conducting traverse measurement and utilizing only a single datum or a small amount of weather station data. Buffer zone analysis was used in this study for zones of different sizes, and it was determined that a 300-m scale is optimal to illustrate the effects of land features on microclimate. The results revealed that the thermal condition in Tainan is influenced by urban development factors, such as the floor area and land cover area, and by geographic factors, such as the distance to the sea. A better cooling effect can be obtained from a vegetation area during the night time and from a water body during the daytime. Moreover, different cooling effects are observed based on the distance to the sea. Through these results, a model for predicting the thermal condition for different periods can be established using a multiple regression model. Urban planners and architects can proffer design and planning suggestions for different areas based on the findings of this study to reduce thermal stress in urban areas. Unlabelled Image • The HiSAN with buffer analysis clearly indicate the characteristics of UHI in Tainan. • Urban features have different effects on the thermal condition at different times. • Water ratio in daytime and vegetation in nighttime have positive cooling effect. • The built-up area is favored to located near the coastal for better thermal comfort. • The Ta prediction model can be built by the urban development and geographic factors. [ABSTRACT FROM AUTHOR]

[Display omitted] • 169 accessions representing ca. 68 (85% of total) species of Bolbitis are sampled. • Species of Bolbitis are resolved into four major clades. • Six well-supported subclades are identified in the most speciose Asian clade. • Evolution of six characters is analyzed and free venation evolved from anastomosing venation in Bolbitis. • Bolbitis originated from Africa and a dispersal from Asia resulted in continental disjunction between Africa and America. Bolbitis is a pantropical fern genus of Dryopteridaceae with ca. 80 species mainly in tropical Asia. Earlier studies confirmed the monophyly of Bolbitis when Mickelia is excluded and identified three major clades in Bolbitis. However, earlier studies are based on relatively small sampling and the majority of Asian species are not sampled. In this study, DNA sequences of three plastid markers of 169 accessions representing ca. 68 (85 % of total) species of Bolbitis in nine out of the 10 series recognized by Hennipman (1977), and 54 accessions representing the five remaining bolbitidoid genera are used to infer a global phylogeny with a focus on Asian species. The major results include: (1) Bolbitis is strongly supported as monophyletic; (2) species of Bolbitis are resolved into four major clades and their relationships are: the Malagasy/Mascarene clade is sister to the rest, followed by the African clade which is sister to the American clade + the Asian clade; (3) six well-supported subclades are identified in the most speciose Asian clade; (4) the free-veined Egenolfia is embedded in Bolbitis and is paraphyletic in relation to species with anastomosing venation; (5) three series sensu Hennipman (1977), B. ser. Alienae , B. ser. Egenolfianae , and B. ser. Heteroclitae , are paraphyletic or polyphyletic; (6) evolution of six morphological characters is analyzed and free venation is found to have evolved from anastomosing venation and reversed to free venation in Bolbitis ; and (7) biogeographical implications are drawn and it is shown that a single recent dispersal from Asia resulted in continental disjunction of closely related ferns of Bolbitis between Africa and America. [ABSTRACT FROM AUTHOR]

A method to extract the interface states (Nit) located in the center area (center Nit) and the Nit located in the corner region (corner Nit) of nand Flash devices is presented in this paper. This Nit extraction method is based on a careful combination of charge-pumping current data, technology computer-aided-design simulation results, and the “control gate (CG)-modulated corner effect,” where “CG-modulated corner effect” refers to the fact that the electron density in the corner region of the transistor is greatly affected by the bias applied to CG. Using this Nit extraction method, the amounts of center Nit and corner Nit of a given nand Flash device can be analyzed. In addition, among devices with various widths of active area, the narrower width device showing worse corner Nit can be demonstrated. Furthermore, the generation of center Nit and corner Nit for a device under program/erase cycle stress is explored. Our Nit extraction method will be useful to analyze not only the characteristics of fresh nand Flash devices but also the reliability of aged nand Flash devices. [ABSTRACT FROM AUTHOR]