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The realization of highly operationally stable blue organic light‐emitting diodes (OLEDs) is a challenge in both academia and industry. This paper describes the development of anthracene–dibenzofuran host materials, 2‐(10‐(naphthalen‐1‐yl)anthracen‐9‐yl)naphtho[2,3‐b]benzofuran (Host 1) and 2‐(10‐([1,1′‐biphenyl]‐2‐yl)anthracen‐9‐yl)naphtho[2,3‐b]benzofuran (Host 2), namely for use in the emissive layer of an OLED stack. A multiple‐resonance thermally activated delayed serves as the blue fluorescence emitter and exhibits an initial luminance of 1000 cd m−2 and long operational stability (i.e., time to decay to 90% of initial luminance) of 249 h. Furthermore, a deep‐blue OLED with an optimized top‐emitting architecture with a high current efficiency of 154.3 cd A−1, is fabricated and calibrated to a Commission International de l'Éclairage y chromaticity coordinate of 0.048. Moreover, the emission spectrum of this OLED has a narrowband peak at 476 nm with a full width at half maximum (FWHM) of 16 nm. This work provides valuable insights into the design of anthracene‐based host materials and highlights the importance of host optimization in improving the operational stability of OLEDs. [ABSTRACT FROM AUTHOR]

"Hot exciton" molecules that allow the transition of excitons from a high‐lying triplet state (Tn, n≥ 2) to singlet states (Sm, m≥1) by a reverse intersystem crossing (hRISC) process have become an effective strategy to achieve high efficiency fluorescence organic light emitting diodes (OLEDs). However, the understanding of the dynamic behavior of the "hot exciton" process is still very lacking. Herein, the exciton dynamics of an aggregation‐induced emission (AIE) molecule TPA‐An‐mPhCz with the "hot exciton" property are deeply investigated, and the proportion between hRISC and internal inversion (IC) of excitons on Tn is successfully quantified by in situ transient electroluminescent measurements and theoretical calculation. It is found that the IC process increases severe energy loss of Tn excitons. By introducing a triplet–triplet annihilation up‐conversion layer in the emissive layer to efficiently recapture the IC excitons and further doping a blue fluorescent emitter in the TPA‐An‐mPhCz layer to achieve high photoluminescence quantum yield (PLQY), the resulting OLED achieves a maximum external quantum efficiency of 12.5% with negligible efficiency roll‐off. More impressively, the operational lifetime LT75 (lifetime to 75% of the initial luminance) of the device with efficient triplets utilization performs a remarkable 116 h under 1000 cd m−2. This work provides the fundamentals for the design of hot exciton materials with efficient exciton utilization to develop efficient blue fluorescence OLEDs. [ABSTRACT FROM AUTHOR]

Aggregation-induced delayed fluorescence (AIDF) materials have great potential in non-doped OLEDs due to their high photoluminescence (PL) quantum efficiency in film, high exciton utilization in the aggregated state and negligible efficiency roll-off at high luminance. However, their efficient mechanism in OLEDs is not yet well understood. Here, the exciton dynamics are used to investigate the electroluminescence (EL) mechanism of an AIDF emitter (4-(10H-phenoxazin-10-yl)phenyl)-(9-phenyl-9H-carbazol-3-yl)methanone (CP-BP-PXZ) in detail. It can be seen that the high efficiency and negligible efficiency roll-off in non-doped OLEDs based on CP-BP-PXZ as the emitter are ascribed to the effective reverse intersystem crossing (RISC) from high level triplet T2 to singlet S1 in the aggregated state. Furthermore, CP-BP-PXZ also exhibits excellent properties as a phosphor host due to its good AIDF properties. Thus, high-efficiency red phosphorescent OLEDs with low roll-off efficiency are successfully fabricated based on CP-BP-PXZ as the host. The maximum external quantum efficiency (EQEmax) reaches 23% and is maintained at 21% at a luminance of 1000 cd m−2. [ABSTRACT FROM AUTHOR]

Aggregation‐induced emission (AIE) materials are attractive for the fabrication of high‐efficiency organic light‐emitting diodes (OLEDs) owing to the "hot exciton" process by reverse intersystem crossing (hRISC) and high photoluminescence quantum yields (PLQY). However, the internal conversion (IC) from the high‐lying triplet excitation states (Tn, n≥2) to the lower excited triplet state (Tn‐1) is inevitable, resulting in severe exciton losses. Herein, an effective device structure is designed that reuses the lost triplet excitons caused by IC and realizes the breakthrough in the efficiency of blue fluorescence OLEDs based on AIE molecule as an emitter. The maximum external quantum efficiency reached as high as 14.8% and is kept at 14.4% at the luminance of 1000 cd m−2. In the designed device, a triplet–triplet annihilation (TTA) up‐conversion material 1‐[2,5‐dimethyl‐4‐(1‐pyrenyl)phenyl]pyrene (DMPPP) is introduced into the AIE emitter as a triplet sensitizer to receive the lost triplet excitons, and a thin TTA up‐conversion layer 9‐[4‐(10‐phenyl‐9‐anthryl)phenyl]‐9H‐carbazole (CzPA) is introduced in the middle of the doped layer to form the emissive layer (EML). It is found that the hRISC process of iTPB‐2AC greatly enhances the utilization efficiency of TTA intermediate state ([TT]*) excitons on CzPA to iTPB‐2AC so that the utilization of the lost excitons is maximized. This work establishes physical insights into the AIE emission materials and device fabrication of high‐efficiency blue fluorescence OLEDs. [ABSTRACT FROM AUTHOR]

Organic fluorescent emitters with narrowband emissions are highly desirable for high‐resolution organic light‐emitting diode (OLED) display technology. In principle, this can be achieved by specifically controlling the intrinsic structural relaxation and vibronic coupling in the excited state. Here, a design strategy to realize narrowband emission of organic fluorescent emitters is proposed by significantly enhancing the low‐frequency vibronic coupling strength (Λ) while simultaneously reducing the high‐frequency Λ of the commonly involved stretching modes. The quinolino‐[3,2,1‐de]acridine‐5,9‐dione (QAO) species is found to be directly associated with this design principle. By introducing single bond‐linked peripheral moieties into the QAO core, the constructed QAO derivatives are shown to exhibit better performance, by achieving a full width at half‐maximum of 23 nm/0.13 eV in toluene for the narrowest band as well as 27 nm/0.15 eV in doped devices, with negligible dependence on the doping concentrations. The maximum external quantum efficiency of the fabricated blue OLED is 17.5%. [ABSTRACT FROM AUTHOR]