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A collision avoidance strategy for automated guided vehicles (AGV) which uses fuzzy rules is proposed. A sensor modeling method was also proposed to obtain the minimum number of sensors and their optimal arrangement on an AGV. Fuzzy logic control guides an AGV in maneuvering in complex environments. Thus, the ability of AGV to avoid collision was improved. Simulator tests have proven the feasibility of the proposed approach.

Layered tin disulfide (SnS 2) nanosheets are gradually coming into people's vision as an emerging two-dimensional material for the potential application majority in optoelectronic field. We investigate a sample of ultra-thin SnS 2 nanosheets (∼5 nm) on SiO 2 /Si substrates and the photodetectors performance based on it with and without high-k ALD-Al 2 O 3 stress liner. By means of temperature-dependent Raman spectroscopy, both a red-shift of Raman frequency from 313.1 cm−1 to 311.2 cm−1 as well as a reduction of the first order temperature coefficient from −0.01232 cm−1/K to −0.00895 cm−1/K are measured. For device, compared to SnS 2 photodetector, Al 2 O 3 /SnS 2 photodetector shows enhancement with 7-times light current, 10-times responsivity, 25%-off rising time and 70%-off falling time under 365 nm illumination. The phenomena can be rationalized by factors that the SnS 2 sample suffers a tensile strain and passivation effect exerted by capped Al 2 O 3 layer. Meanwhile, the first principle calculations assist the study from an angle of verification. The analogue stress treatment operated in this work improves the properties of SnS 2 and enhances the performances of SnS 2 -based photodetectors, aiming at expanding the thin-film materials applications in optoelectronic devices. • 2D-SnS 2 nanosheets was capped with Al 2 O 3 stress liner by atomic layer deposition. • Raman spectrum occurred red-shift and first order temperature coefficient reduced. • Al 2 O 3 stress liner exerts tensile strain and passivation effect on SnS 2 nanosheets. • Al 2 O 3 /SnS 2 photodetector precedes SnS 2 photodetector in photoresponse properties. [ABSTRACT FROM AUTHOR]

This study investigates the photoluminescence for self-assembled InAs quantum dots embedded in photonic crystal nanocavities as two of the air holes nearest the H1 cavity were shifted. A rapid decrease of resonant wavelength and quality factor for the cavity modes, in which the electric field patterns extended in the shifting direction, were found as the shift increased from 0.2 to 0.4 lattice constants. This phenomenon is interpreted as being caused by the formation of two point defects between the nearest and second nearest air holes.