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137 results on '"Lin, T. D."'

5. Physical properties of concrete made with Apollo 16 lunar soil sample

Author

Lin, T. D, Love, H, and Stark, D

Subjects
Nonmetallic Materials
Abstract

This paper describes the first phase of the long-term investigation for the construction of concrete lunar bases. In this phase, petrographic and scanning electron microscope examinations showed that the morphology and elemental composition of the lunar soil made it suitable for use as a fine aggregate for concrete. Based on this finding, calcium aluminate cement and distilled water were mixed with the lunar soil to fabricate test specimens. The test specimens consisted of a 1-in cube, a 1/2-in cube, and three 0.12 x 0.58 x 3.15-in beam specimens. Tests were performed on these specimens to determine compressive strength, modulus of rupture, modulus of elasticity, and thermal coefficient of expansion. Based on examination of the material and test results, it is concluded that lunar soil can be used as a fine aggregate for concrete.

Published
1992

6. Concrete lunar base investigation

Author

Lin, T. D, Senseny, Jonathan A, Arp, Larry D, and Lindbergh, Charles

Subjects
Man/System Technology And Life Support
Abstract

This paper presents results of structural analyses and a preliminary design of a precast, prestressed concrete lunar base subjected to 1-atm internal pressure. The proposed infrastructure measures 120 ft in diameter and 72 ft in height, providing 33,000 sq ft of work area for scientific and industrial operations. Three loading conditions were considered in the design (1) during construction, (2) under pressurization, and (3) during an air-leak scenario. A floating foundation, capable of rigid body rotation and translation as the lunar soil beneath it yields, was developed to support the infrastructure and to ensure the airtightness of the system. Results reveal that it is feasible to use precast, prestressed concrete for construction of large lunar bases on the Moon.

Published
1992

7. Concrete: Potential material for Space Station

Author

Lin, T. D

Subjects
Spacecraft Design, Testing And Performance
Abstract

To build a permanent orbiting space station in the next decade is NASA's most challenging and exciting undertaking. The space station will serve as a center for a vast number of scientific products. As a potential material for the space station, reinforced concrete was studied, which has many material and structural merits for the proposed space station. Its cost-effectiveness depends on the availability of lunar materials. With such materials, only 1 percent or less of the mass of a concrete space structure would have to be transported from earth.

Published
1992

8. Lunar cement and lunar concrete

Author

Lin, T. D

Subjects
Lunar And Planetary Exploration
Abstract

Results of a study to investigate methods of producing cements from lunar materials are presented. A chemical process and a differential volatilization process to enrich lime content in selected lunar materials were identified. One new cement made from lime and anorthite developed compressive strengths of 39 Mpa (5500 psi) for 1 inch paste cubes. The second, a hypothetical composition based on differential volatilization of basalt, formed a mineral glass which was activated with an alkaline additive. The 1 inch paste cubes, cured at 100C and 100 percent humidity, developed compressive strengths in excess of 49 Mpa (7100 psi). Also discussed are tests made with Apollo 16 lunar soil and an ongoing investigation of a proposed dry mix/steam injection procedure for casting concrete on the Moon.

Published
1991

9. Electronic structures of Ga2O3(Gd2O3) gate dielectric on n-Ge(001) as grown and after CF4 plasma treatment: A synchrotron-radiation photoemission study.

Author

Pi, T.-W., Lee, W. C., Huang, M. L., Chu, L. K., Lin, T. D., Chiang, T. H., Wang, Y. C., Wu, Y. D., Hong, M., and Kwo, J.

Subjects
ELECTRONIC structure, GALLIUM, GADOLINIUM, GERMANIUM, SYNCHROTRON radiation, PHOTOEMISSION
Abstract

The interfacial electronic structure of Ga2O3(Gd2O3) (GGO) on n-Ge(001) is determined using high-resolution synchrotron radiation photoemission. The excitation photon energy was specifically chosen to observe the interaction at the GGO/Ge interface (hv = 463 eV) as well as the possible diffusion of Ge up to the GGO surface (hν = 120 eV). The Ge 3d core-level spectra were fit to extract the contributing components. Photoemission measurements were done for four samples, as deposited, N2 annealed, CF4 plasma treated, and the combined CF4 plasma treated and N2 annealed. No surface passivation was employed prior to the dielectric deposition. SRPES data clearly showed that the elemental Ge in the as-deposited sample was effectively kept in the wafer. Prevention of Ge diffusion was attributed to formation of a thin germanatelike oxide layer. Other than contributions from bulk Ge, an analytical fit to the Ge 3d cores gives two components that are associated with bonding to Gd2O3 (GdGe*) and to Ga2O3 (GaGe*), which had chemical shifts of 3.46 and 1.80 eV, respectively. We hereby label them as MGe*, where M stands for either Gd2O3 or Ga2O3. Area occupations of the GdGe* and GaGe* oxides are ∼87% and ∼10%, respectively. A CF4 plasma treatment disturbs the film itself as well as the interfacial oxide so that the GGO surface begins to show both elemental Ge and Ga. Nevertheless, the follow-up N2 annealing produces the GdGe*+GaGe* layer with characteristics similar to those at the GGO/Ge interface. Both GdGe* and GaGe* states in the CN-treated sample show simultaneously a smaller chemical shift by 0.31 ± 0.02 eV than those in the as-deposited sample. The treatments also induce upward band bending on both the high κ and the Ge sides, which causes the valence band offset at the GGO/Ge interface to be 2.95 eV. [ABSTRACT FROM AUTHOR]

Published
2011
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13. Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition.

Author

Hong, M., Wan, H. W., Lin, K. Y., Chang, Y. C., Chen, M. H., Lin, Y. H., Lin, T. D., Pi, T. W., and Kwo, J.

Subjects
ATOMIC layer deposition, CHEMICAL vapor deposition, ATOMIC layer epitaxial growth, INDIUM gallium arsenide, METAL oxide semiconductor field-effect transistors
Abstract

We performed interfacial electric and electronic studies of both in-situ and ex-situ atomic-layer deposited (ALD) Al2O3 films on InGaAs. Self-aligned inversion-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) with a 1 μm gate length (Lg) from the in-situ sample have extrinsic drain currents (Id) of 1.8mA/μm, transconductances (Gm) of 0.98mS/μm, and an effective mobility (μeff) of 1250 cm2/V s. MOSFETs that employ ex-situ ALD-Al2O3 have an Id of 0.56mA/μm, Gm of 0.28 mS/μm, and μeff of 410 cm2/V s. Synchrotron radiation photoemission reveals no AsOx residue at the Al2O3/InGaAs interface using the in-situ approach, whereas some AsOx residue is detected using the ex-situ method. [ABSTRACT FROM AUTHOR]

Published
2017
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17. Publisher’s Note: “Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3 (Gd2O3) passivation” [Appl. Phys. Lett. 98, 062108 (2011)]

Author

Lin, C. A., primary, Chiu, H. C., additional, Chiang, T. H., additional, Lin, T. D., additional, Chang, Y. H., additional, Chang, W. H., additional, Chang, Y. C., additional, Wang, W.-E., additional, Dekoster, J., additional, Hoffmann, T. Y., additional, Hong, M., additional, and Kwo, J., additional

Published
2011
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19. InGaAs and Ge MOSFETs with a common high κ gate dielectric

Author

Lee, W. C., primary, Lin, T. D., additional, Chu, L. K., additional, Chang, P., additional, Chang, Y. C., additional, Chu, R. L., additional, Chiu, H. C., additional, Lin, C. A., additional, Chang, W. H., additional, Chiang, T. H., additional, Lee, Y. J., additional, Hong, M., additional, and Kwo, J., additional

Published
2010
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24. Nano-electronics of high k dielectrics on exotic semiconductors for science and technology beyond Si CMOS

Author

Lee, W. C., primary, Chang, P., additional, Lee, Y. J., additional, Huang, M. L., additional, Lin, T. D., additional, Chu, L. K., additional, Chang, Y. C., additional, Chiu, H. C., additional, Chang, Y. H., additional, Lin, C. A., additional, Chang, W. H., additional, Chu, R. L., additional, Chiang, T. H., additional, Wu, Y. D., additional, Kwo, J., additional, and Hong, M., additional

Published
2010
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34. Concrete lunar base investigation

Author

Lin, T. D, Senseney, Jonathan A, Arp, Larry Dean, and Lindbergh, Charles

Subjects
Ground Support Systems And Facilities (Space)
Abstract

This paper presents results of structural analyses and a preliminary design of a precast, prestressed concrete lunar based subjected to one atmosphere internal pressure. The proposed infrastructure measures 120 ft in diameter and 72 ft in height, providing 33,000 sq ft of work area for scientific and industrial operations. Three loading conditions were considered in the design: (1) during construction; (2) under pressurization; and (3) during an air-leak scenario. A floating foundation, capable of rigid body rotation and translation as the lunar soil beneath it yields, was developed to support the infrastructure and to ensure the air-tightness of the system. Results reveal that it is feasible to use precast, prestressed concrete for construction of large lunar bases on the moon.

Published
1989

35. Fire resistance of reinforced concrete columns

Author

Nan, S., Lin, T. D., and Lie, T. T.

Subjects
Poteaux de béton, Concrete columns
Abstract

This paper presents test results including data analyses of 31 concentrically 'loaded' columns and 6 eccentrically loaded ones subjected to the standard ASTM E-119 fire., Ce document expose les résultats comprenant ceux des analyses des données de 31 colonnes à charge concentrique et de 6 colonnes à charge excentrique, soumises à l'incendie expérimental suivant la norme ASTM E-119.

Published
1992

40. Fire loading of modern reinforced concrete columns

Author

Lin, T. D., Lie, T. T., Burg, R. G., and Corley, W. G.

Subjects
Poteaux de béton, Cement and Concrete, Concrete columns, Béton, Fire, Concrete
Abstract

Proceedings of the Seminar on Structural Design for Hazardous Loads : The Role of Physical Testing: 1991-04, England

Published
1992

41. Fire resistance of building elements

Author

Almand, K. H., Lie, T. T., and Lin, T. D.

Subjects
ComputerSystemsOrganization_COMPUTERSYSTEMIMPLEMENTATION, ComputingMethodologies_SYMBOLICANDALGEBRAICMANIPULATION, Performance of, Tenue
Abstract

Series: ASCE Manuals and Reports on Engineering Practice

Published
1992

50. Greatly improved interfacial passivation of in-situ high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100).

Author

Chu, R. L., Liu, Y. C., Lee, W. C., Lin, T. D., Huang, M. L., Pi, T. W., Kwo, J., and Hong, M.

Subjects
SURFACE waves (Fluids), PASSIVATION, IN situ microanalysis, EPITAXY, MOLECULAR beams, OPTICAL properties of germanium
Abstract

A high-quality high-σ/Ge interface has been achieved by combining molecule beam epitaxy grown Ge epitaxial layer and in-situ deposited high j dielectric. The employment of Ge epitaxial layer has sucessfully buried and/or removed the residue of unfavorable carbon and native oxides on the chemically cleaned and ultra-high vacuum annealed Ge(100) wafer surface, as studied using angleresolved x-ray photoelectron spectroscopy. Moreover, the scanning tunneling microscopy analyses showed the significant improvements in Ge surface roughness from 3.5Å to 1Å with the epi-layer growth. Thus, chemically cleaner, atomically more ordered, and morphologically smoother Ge surfaces were obtained for the subsquent deposition of high j dielectrics, comparing with those substrates without Ge epi-layer. The capacitance-voltage (C-V) characteristics and low extracted interfacial trap density (Dit) reveal the improved high-σ/Ge interface using the Ge epi-layer approach. [ABSTRACT FROM AUTHOR]

Published
2014
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