137 results on '"Lin, T. D."'
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2. InGaAs Metal Oxide Semiconductor Devices with Ga2O3(Gd2O3) High-κ Dielectrics for Science and Technology beyond Si CMOS
3. Advances on III-V MOSFET for Science and Technology beyond Si CMOS
4. InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3(Gd2O3) as a gate dielectric
5. Physical properties of concrete made with Apollo 16 lunar soil sample
6. Concrete lunar base investigation
7. Concrete: Potential material for Space Station
8. Lunar cement and lunar concrete
9. Electronic structures of Ga2O3(Gd2O3) gate dielectric on n-Ge(001) as grown and after CF4 plasma treatment: A synchrotron-radiation photoemission study.
10. Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition
11. Oncogenic MCT-1 activation promotes YY1-EGFR-MnSOD signaling and tumor progression
12. Hierarchical partition—a new optimal pivoting algorithm
13. Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition.
14. (Invited) High /InGaAs for Ultimate CMOS - Interfacial Passivation, Low Ohmic Contacts, and Device Performance
15. Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition
16. Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device
17. Publisher’s Note: “Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3 (Gd2O3) passivation” [Appl. Phys. Lett. 98, 062108 (2011)]
18. Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) passivation
19. InGaAs and Ge MOSFETs with a common high κ gate dielectric
20. Achieving high-performance Ge MOS devices using high-к gate dielectrics Ga2O3(Gd2O3) of sub-nm EOT
21. High-quality molecular-beam-epitaxy-grown Ga2O3(Gd2O3) on Ge (100): Electrical and chemical characterizations
22. Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3∕Ga2O3(Gd2O3)∕In0.2Ga0.8As
23. dc and rf characteristics of self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3(Gd2O3) as gate dielectrics
24. Nano-electronics of high k dielectrics on exotic semiconductors for science and technology beyond Si CMOS
25. High performance Ga2O3(Gd2O3)/Ge MOS devices without interfacial layers
26. Self-aligned inversion-channel In0.75Ga0.25As MOSFETs using MBE-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics
27. High performance self-aligned inversion-channel MOSFETs with In0.53Ga0.47As channel and ALD-Al2O3 gate dielectric
28. Achieving nearly free fermi-level movement and Vth engineering in Ga2O3(Gd2O3)/In0.2Ga0.8As
29. Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices
30. Nano-electronics of high κ dielectrics on InGaAs for key technologies beyond Si CMOS
31. Self-aligned inversion channel In0.53Ga0.47As N-MOSFETs with ALD-Al2O3 and MBE-Al2O3/Ga2O3(Gd2O3) as gate dielectrics
32. Metal-oxide-semiconductor devices with UHV-Ga2O3(Gd2O3) on Ge(100)
33. Energy-band parameters of atomic layer deposited Al2O3 and HfO2 on InxGa1−xAs
34. Concrete lunar base investigation
35. Fire resistance of reinforced concrete columns
36. High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics
37. Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al2O3/Ga2O3(Gd2O3as gate dielectrics
38. Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters
39. Molecular beam epitaxy grown Ga[sub 2]O[sub 3](Gd[sub 2]O[sub 3]) high κ dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics
40. Fire loading of modern reinforced concrete columns
41. Fire resistance of building elements
42. Fire resistance of concentrically loaded reinforced concrete columns
43. Fire resistance of reinforced concrete columns
44. InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation
45. Ga2O3(Gd2O3)∕Si3N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion
46. Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As
47. Energy-band parameters of atomic-layer-deposition Al2O3∕InGaAs heterostructure
48. Building Fire Safety, Structural Fire Tests, and Performance Based Codes
49. Damage to structures and buildings from the Chi-Chi (Taiwan) earthquake
50. Greatly improved interfacial passivation of in-situ high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100).
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