1. The impact of three-dimensional effects on EEPROM cell performance
- Author
-
Linton, Thomas D., Jr., Blakey, Peter A., and Neikirk, Dean P.
- Subjects
Electrically erasable programmable read-only memory -- Research ,Computer simulation -- Usage ,Ferroelectric devices -- Research ,Business ,Electronics ,Electronics and electrical industries - Abstract
The influence of three-dimensional effects on the behavior of parameterized electrically erasable programmable read-only memory cells (EEPROM) is studied. A three-dimensional device simulator is employed to analyze the threshold voltage, tunneling current, programming speed and mask misregistration. Results indicate the presence of short- and narrow-channel effects, increase and decrease of tunneling currents, the reliance of the cell coupling ratio on the geometrical details and the sizing aspect of the Vcvto dependence on Qf.
- Published
- 1992