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Disordered thin films are a common choice of material for superconducting, high impedance circuits used in quantum information or particle detector physics. A wide selection of materials with different levels of granularity are available, but, despite low microwave losses being reported for some, the high degree of disorder always implies the presence of intrinsic defects. Prominently, quantum circuits are prone to interact with two-level systems (TLS), typically originating from solid state defects in the dielectric parts of the circuit, like surface oxides or tunneling barriers. We present an experimental investigation of TLS in granular aluminum thin films under applied mechanical strain and electric fields. The analysis reveals a class of strongly coupled TLS having electric dipole moments up to 30 eA, an order of magnitude larger than dipole moments commonly reported for solid state defects. Notably, these large dipole moments appear more often in films with a higher resistivity. Our observations shed new light on granular superconductors and may have implications for their usage as a quantum circuit material., Comment: 14 pages, 9 figures

In the endeavour to make quantum computers a reality, integrated superconducting circuits have become a promising architecture. A major challenge of this approach is decoherence originating from spurious atomic tunneling defects at the interfaces of qubit electrodes, which may resonantly absorb energy from the qubit's oscillating electric field and reduce the qubit's energy relaxation time $T_1$. Here, we show that qubit coherence can be improved by tuning dominating defects away from the qubit resonance using an applied DC-electric field. We demonstrate a method that optimizes the applied field bias and enhances the 30-minute averaged qubit $T_1$ time by 23\%. We also discuss how local gate electrodes can be implemented in superconducting quantum processors to enable simultaneous in-situ coherence optimization of individual qubits., Comment: 5.5 pages and 4 figures (main Text), plus 11 pages with supplementary figures discussing additional loss via the DC-electrode, how the T1 improvement reduces over time after E-field optimization, and plots of the complete data set

Tunneling defects in disordered materials form spurious two-level systems which are a major source of decoherence for micro-fabricated quantum devices. For superconducting qubits, defects in tunnel barriers of submicrometer-sized Josephson junctions couple strongest to the qubit, which necessitates optimization of the junction fabrication to mitigate defect formation. Here, we investigate whether defects appear predominantly at the edges or deep within the amorphous tunnel barrier of a junction. For this, we compare defect densities in differently shaped Al/AlO$_x$/Al Josephson junctions that are part of a Transmon qubit. We observe that the number of detectable junction-defects is proportional to the junction area, and does not significantly scale with the junction's circumference, which proposes that defects are evenly distributed inside the tunnel barrier. Moreover, we find very similar defect densities in thermally grown tunnel barriers that were formed either directly after the base electrode was deposited, or in a separate deposition step after removal of native oxide by Argon ion milling.

Shadow evaporation is commonly used to micro-fabricate the key element of superconducting qubits - the Josephson junction. However, in conventional two-angle deposition circuit topology, unwanted stray Josephson junctions are created which contribute to dielectric loss. So far, this could be avoided by shorting the stray junctions with a so-called bandage layer deposited in an additional lithography step, which may further contaminate the chip surface. Here, we present an improved shadow evaporation technique allowing one to fabricate sub-micrometer-sized Josephson junctions together with bandage layers in a single lithography step. We also show that junction aging is significantly reduced when junction electrodes are oxidized in an oxygen atmosphere directly after deposition.

The anomalous low-temperature properties of glasses arise from intrinsic excitable entities, so-called tunneling Two-Level-Systems (TLS), whose microscopic nature has been baffling solid-state physicists for decades. TLS have become particularly important for micro-fabricated quantum devices such as superconducting qubits, where they are a major source of decoherence. Here, we present a method to characterize individual TLS in virtually arbitrary materials deposited as thin-films. The material is used as the dielectric in a capacitor that shunts the Josephson junction of a superconducting qubit. In such a hybrid quantum system the qubit serves as an interface to detect and control individual TLS. We demonstrate spectroscopic measurements of TLS resonances, evaluate their coupling to applied strain and DC-electric fields, and find evidence of strong interaction between coherent TLS in the sample material. Our approach opens avenues for quantum material spectroscopy to investigate the structure of tunneling defects and to develop low-loss dielectrics that are urgently required for the advancement of superconducting quantum computers.

Solid-state quantum coherent devices are quickly progressing. Superconducting circuits, for instance, have already been used to demonstrate prototype quantum processors comprising a few tens of quantum bits. This development also revealed that a major part of decoherence and energy loss in such devices originates from a bath of parasitic material defects. However, neither the microscopic structure of defects nor the mechanisms by which they emerge during sample fabrication are understood. Here, we present a technique to obtain information on locations of defects relative to the thin film edge of the qubit circuit. Resonance frequencies of defects are tuned by exposing the qubit sample to electric fields generated by electrodes surrounding the chip. By determining the defect's coupling strength to each electrode and comparing it to a simulation of the field distribution, we obtain the probability at which location and at which interface the defect resides. This method is applicable to already existing samples of various qubit types, without further on-chip design changes. It provides a valuable tool for improving the material quality and nano-fabrication procedures towards more coherent quantum circuits.

Superconducting integrated circuits have demonstrated a tremendous potential to realize integrated quantum computing processors. However, the downside of the solid-state approach is that superconducting qubits suffer strongly from energy dissipation and environmental fluctuations caused by atomic-scale defects in device materials. Further progress towards upscaled quantum processors will require improvements in device fabrication techniques which need to be guided by novel analysis methods to understand and prevent mechanisms of defect formation. Here, we present a new technique to analyse individual defects in superconducting qubits by tuning them with applied electric fields. This provides a new spectroscopy method to extract the defects' energy distribution, electric dipole moments, and coherence times. Moreover, it enables one to distinguish defects residing in Josephson junction tunnel barriers from those at circuit interfaces. We find that defects at circuit interfaces are responsible for about 60% of the dielectric loss in the investigated transmon qubit sample. About 40% of all detected defects are contained in the tunnel barriers of the large-area parasitic Josephson junctions that occur collaterally in shadow evaporation, and only about 3% are identified as strongly coupled defects which presumably reside in the small-area qubit tunnel junctions. The demonstrated technique provides a valuable tool to assess the decoherence sources related to circuit interfaces and to tunnel junctions that is readily applicable to standard qubit samples., Comment: Including Supplementary Information and Supplementary Figures

Increasing and stabilizing the coherence of superconducting quantum circuits and resonators is of utmost importance for various technologies ranging from quantum information processors to highly sensitive detectors of low-temperature radiation in astrophysics. A major source of noise in such devices is a bath of quantum two-level systems (TLSs) with broad distribution of energies, existing in disordered dielectrics and on surfaces. Here we study the dielectric loss of superconducting resonators in the presence of a periodic electric bias field, which sweeps near-resonant TLSs in and out of resonance with the resonator, resulting in a periodic pattern of Landau-Zener transitions. We show that at high sweep rates compared to the TLS relaxation rate, the coherent evolution of the TLS over multiple transitions yields a significant reduction in the dielectric loss relative to the intrinsic value. This behavior is observed both in the classical high-power regime and in the quantum single-photon regime, possibly suggesting a viable technique to dynamically decouple TLSs from a qubit., Comment: Revised version

We report on long-term measurements of a highly coherent, non-tunable superconducting transmon qubit, revealing low-frequency burst noise in coherence times and qubit transition frequency. We achieve this through a simultaneous measurement of the qubit's relaxation and dephasing rate as well as its resonance frequency. The analysis of correlations between these parameters yields information about the microscopic origin of the intrinsic decoherence mechanisms in Josephson qubits. Our results are consistent with a small number of microscopic two-level systems located at the edges of the superconducting film, which is further confirmed by a spectral noise analysis., Comment: 10 Pages, 6 figures

Josephson junctions made from aluminium and its oxide are the most commonly used functional elements for superconducting circuits and qubits. It is generally known that the disordered thin-film AlOx contains atomic tunneling systems. Coherent tunneling systems may couple strongly to a qubit via their electric dipole moment, giving rise to spectral level repulsion. In addition, slowly fluctuating tunneling systems are observable when they are located close to coherent ones and distort their potentials. This interaction causes telegraphic switching of the coherent tunneling systems' energy splitting. Here, we measure such switching induced by individual fluctuators on time scales from hours to minutes using a superconducting qubit as a detector. Moreover, we extend the range of measurable switching times to millisecond scales by employing a highly sensitive single-photon qubit swap spectroscopy and statistical analysis of the measured qubit states.

Parasitic two-level tunneling systems (TLS) emerge in amorphous dielectrics and constitute a serious nuisance for various microfabricated devices, where they act as a source of noise and decoherence. Here, we demonstrate a new test bed for the study of TLS in various materials which provides access to properties of individual TLS as well as their ensemble response. We terminate a superconducting transmission-line resonator with a capacitor that hosts TLS in its dielectric. By tuning TLS via applied mechanical strain, we observe the signatures of individual TLS strongly coupled to the resonator in its transmission characteristics and extract the coupling components of their dipole moments and energy relaxation rates. The strong and well-defined coupling to the TLS bath results in pronounced resonator frequency fluctuations and excess phase noise, through which we can study TLS ensemble effects such as spectral diffusion, and probe theoretical models of TLS interaction.

Amorphous solids show surprisingly universal behaviour at low temperatures. The prevailing wisdom is that this can be explained by the existence of two-state defects within the material. The so-called standard tunneling model has become the established framework to explain these results, yet it still leaves the central question essentially unanswered -- what are these two-level defects? This question has recently taken on a new urgency with the rise of superconducting circuits in quantum computing, circuit quantum electrodynamics, magnetometry, electrometry and metrology. Superconducting circuits made from aluminium or niobium are fundamentally limited by losses due to two-level defects within the amorphous oxide layers encasing them. On the other hand, these circuits also provide a novel and effective method for studying the very defects which limit their operation. We can now go beyond ensemble measurements and probe individual defects -- observing the quantum nature of their dynamics and studying their formation, their behaviour as a function of applied field, strain, temperature and other properties. This article reviews the plethora of recent experimental results in this area and discusses the various theoretical models which have been used to describe the observations. In doing so, it summarises the current approaches to solving this fundamentally important problem in solid-state physics., Comment: 34 pages, 7 figures, 1 table

Understanding the nature of two-level tunneling defects is important for minimizing their disruptive effects in various nano-devices. By exploiting the resonant coupling of these defects to a superconducting qubit, one can probe and coherently manipulate them individually. In this work we utilize a phase qubit to induce Rabi oscillations of single tunneling defects and measure their dephasing rates as a function of the defect's asymmetry energy, which is tuned by an applied strain. The dephasing rates scale quadratically with the external strain and are inversely proportional to the Rabi frequency. These results are analyzed and explained within a model of interacting standard defects, in which pure dephasing of coherent high-frequency (GHz) defects is caused by interaction with incoherent low-frequency thermally excited defects., Comment: 5 pages, 2 figures

The sensitivity of superconducting qubits allows for spectroscopy and coherence measurements on individual two-level systems present in the disordered tunnel barrier of an $\mathrm{Al/AlO_x/Al}$ Josephson junction. We report experimental evidence for the decoherence of two-level systems by Bogoliubov quasiparticles leaking into the insulating $\mathrm{AlO_x}$ barrier. We control the density of quasiparticles in the junction electrodes either by the sample temperature or by injecting them using an on-chip dc-SQUID driven to its resistive state. The decoherence rates were measured by observing the two-level system's quantum state evolving under application of resonant microwave pulses and were found to increase linearly with quasiparticle density, in agreement with theory. This interaction with electronic states provides a noise and decoherence mechanism that is relevant for various microfabricated devices such as qubits, single-electron transistors, and field-effect transistors. The presented experiments also offer a possibility to determine the location of the probed two-level systems across the tunnel barrier, providing clues about the fabrication step in which they emerge.

Recent progress with microfabricated quantum devices has revealed that an ubiquitous source of noise originates in tunneling material defects that give rise to a sparse bath of parasitic two-level systems (TLSs). For superconducting qubits, TLSs residing on electrode surfaces and in tunnel junctions account for a major part of decoherence and thus pose a serious roadblock to the realization of solid-state quantum processors. Here, we utilize a superconducting qubit to explore the quantum state evolution of coherently operated TLSs in order to shed new light on their individual properties and environmental interactions. We identify a frequency-dependence of TLS energy relaxation rates that can be explained by a coupling to phononic modes rather than by anticipated mutual TLS interactions. Most investigated TLSs are found to be free of pure dephasing at their energy degeneracy points, around which their Ramsey and spin-echo dephasing rates scale linearly and quadratically with asymmetry energy, respectively. We provide an explanation based on the standard tunneling model, and identify interaction with incoherent low-frequency (thermal) TLSs as the major mechanism of the pure dephasing in coherent high-frequency TLS., Comment: 6 pages, 3 figures, supplementary material available

Parasitic two-level tunneling systems originating from structural material defects affect the functionality of various microfabricated devices by acting as a source of noise. In particular, superconducting quantum bits may be sensitive to even single defects when these reside in the tunnel barrier of the qubit's Josephson junctions, and this can be exploited to observe and manipulate the quantum states of individual tunneling systems. Here, we detect and fully characterize a system of two strongly interacting defects using a novel technique for high-resolution spectroscopy. Mutual defect coupling has been conjectured to explain various anomalies of glasses, and was recently suggested as the origin of low frequency noise in superconducting devices. Our study provides conclusive evidence of defect interactions with full access to the individual constituents, demonstrating the potential of superconducting qubits for studying material defects. All our observations are consistent with the assumption that defects are generated by atomic tunneling., Comment: 13 pages, 7 figures. Includes supplementary material

Since the very first experiments, superconducting circuits have suffered from strong coupling to environmental noise, destroying quantum coherence and degrading performance. In state-of-the-art experiments, it is found that the relaxation time of superconducting qubits fluctuates as a function of time. We present measurements of such fluctuations in a 3D-Transmon circuit and develop a qualitative model based on interactions within a bath of background two-level systems (TLS) which emerge from defects in the device material. In our model, the time-dependent noise density acting on the qubit emerges from its near-resonant coupling to high-frequency TLS which experience energy fluctuations due to their interaction with thermally fluctuating TLS at low frequencies. We support the model by providing experimental evidence of such energy fluctuations observed in a single TLS in a phase qubit circuit., Comment: 14 pages, 7 figures, as published

We report on experimental multi-photon spectroscopy of a hybrid quantum system consisting of a superconducting phase qubit coherently coupled to an intrinsic two-level defect. We directly probe hybridized states of the combined qubit-defect system in the strongly interacting regime, where both the qubit-defect coupling and the driving cannot be considered as weak perturbations. This regime is described by a theoretical model which incorporates anharmonic corrections, multi-photon processes and decoherence. We present a detailed comparison between experiment and theory and find excellent agreement over a wide range of parameters., Comment: 6 pages, 6 figures

Superconducting qubits often show signatures of coherent coupling to microscopic two-level fluctuators (TLFs), which manifest themselves as avoided level crossings in spectroscopic data. In this work we study a phase qubit, in which we induce Rabi oscillations by resonant microwave driving. When the qubit is tuned close to the resonance with an individual TLF and the Rabi driving is strong enough (Rabi frequency of order of the qubit-TLF coupling), interesting 4-level dynamics are observed. The experimental data shows a clear asymmetry between biasing the qubit above or below the fluctuator's level-splitting. Theoretical analysis indicates that this asymmetry is due to an effective coupling of the TLF to the external microwave field induced by the higher qubit levels., Comment: 4 pages, 3 figures