24 results on '"Liu, Jheng-Sin"'
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2. Electronic and optical properties of highly boron-doped epitaxial Ge/AlAs(001) heterostructures.
3. Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on InxAl1–xAs Stressors
4. Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on InxAl1–xAs Stressors.
5. TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications
6. AIP Advances
7. Advanced Energy-Efficient Devices for Ultra-Low Voltage System: Materials-to-Circuits
8. TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications
9. Journal of the Electron Devices Society
10. In Situ SiO2 Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiOx Atomic Layer Deposition Process
11. Structural and optical properties of sulfur passivated epitaxial step-graded GaAs1-ySby materials
12. Transport Across Heterointerfaces of Amorphous Niobium Oxide and Crystallographically Oriented Epitaxial Germanium
13. Investigating FinFET Sidewall Passivation Using Epitaxial (100)Ge and (110)Ge Metal–Oxide–Semiconductor Devices on AlAs/GaAs
14. Performance Analysis of TaSiOx Inspired Sub-10 nm Energy Efficient In0.53Ga0.47As Quantum Well Tri-Gate Technology
15. An Energy-Efficient Tensile-Strained Ge/InGaAs TFET 7T SRAM Cell Architecture for Ultralow-Voltage Applications
16. Structural and optical properties of sulfur passivated epitaxial step-graded GaAs1-ySby materials.
17. Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy
18. Tailoring the Valence Band Offset of Al2O3 on Epitaxial GaAs1–ySby with Tunable Antimony Composition
19. Performance Evaluation of Novel Strain-Engineered Ge-InGaAs Heterojunction Tunnel Field-Effect Transistors
20. Heterointerface Engineering of Broken-Gap InAs/GaSb Multilayer Structures
21. A Highly Scalable Interface Fuse for Advanced CMOS Logic Technologies
22. Tailoring the Valence Band Offset of Al2O3on Epitaxial GaAs1–ySbywith Tunable Antimony Composition
23. Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on In x Al 1- x As Stressors.
24. In Situ SiO 2 Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiO x Atomic Layer Deposition Process.
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