527 results on '"Liu, Po-Tsun"'
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2. Investigation of deposition technique and thickness effect of HfO2 film in bilayer InWZnO-based conductive bridge random access memory
3. Vertical channel metal-oxide clusters as sensitive NO2 sensor with modulated response at room temperature
4. Enhanced reliability and uniformity for Ge pMOSFET with low temperature supercritical fluid treatment
5. Impact of O2 plasma treatment on novel amorphous oxide InWZnO on conductive bridge random access memory
6. Capacitorless 1-to-4 Sharing Architecture a-Si:H Gate Driver on Array with Bidirectional Function for TFT-LCD Application
7. Highly reliable a‐Si:H gate driver on array with complementary double‐sided noise‐eliminating and dual voltage levels for TFT‐LCD applications
8. Effect of Annealing Treatment on Performance of Ga2O3 Conductive-Bridging Random-Access Memory
9. Indium Zinc Oxide Nanosheet Transistor With 2 nm Channel Thickness for Monolithic Three-Dimensional Integrated Circuit
10. Enhanced Performance for SiGe/Si Gate-All-Around Field-Effect-Transistor with Ge Condensation Using Supercritical Fluid Treatment
11. High Performance Ge FinFET CMOS Invertor with $\mathrm{I}_{\text{ON}}=2.0\ \text{mA}/\mu\mathrm{m}$ at $\mathrm{V}_{\text{OV}}=1\mathrm{V}, \mathrm{S}.\mathrm{S}.=64\ \text{mV}/\text{dec},\mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}}=2.5\times 10^{6}$, and $\text{Voltage}\ \text{Gain}=90\ \mathrm{V}/\mathrm{V}$ by Using High Pressure Supercritical Fluid Hydroxide Oxidation
12. Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition
13. Thickness-dependent magnetotransport properties and terahertz response of topological insulator Bi2Te3 thin films
14. Highly durable and flexible gallium-based oxide conductive-bridging random access memory
15. Sputtered Ultrathin WO3 for Realizing Room-Temperature High-Sensitive NO2 Gas Sensors.
16. Heterogeneous Integration of Atomically‐Thin Indium Tungsten Oxide Transistors for Low‐Power 3D Monolithic Complementary Inverter
17. Sputtered Ultra-Thin Wo3 for Realizing Room Temperature High Sensitive No2 Gas Sensors
18. InGaZnO Ferroelectric Thin-Film Transistor Using HfO₂/Al₂O₃/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window
19. Electrical Characteristics of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium-Gallium-Zinc-Oxide Thin-Film Transistors with In-Situ Hydrogenation and Neutral Beam Oxidation
20. TFT Materials and Devices
21. Two-Dimensional-Like Amorphous Indium Tungsten Oxide Nano-Sheet Junctionless Transistors with Low Operation Voltage
22. Electrical Characteristics Comparison of Ni/Al Source/Drain Electrodes for P-type Channel SnOx Thin Film Transistors
23. (Digital Presentation) High Performance Back-Channel-Etch Igzo TFT with Self-Passivate HfO2 By Backside Exposure Technology
24. Electrical Characteristics Enhancement for P-Type SnOx Thin Film Transistors with Furnace and Microwave Annealing
25. Extraction Method for Equivalent Oxide Thickness of a Thin High-κ Gate Insulator and Estimation of Field-Effect Mobility in Amorphous Oxide Semiconductor Nano-Sheet Junctionless Transistors
26. Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment
27. Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture
28. Investigation on amorphous InGaZnO based resistive switching memory with low-power, high-speed, high reliability
29. Investigation on plasma treatment for transparent Al–Zn–Sn–O thin film transistor application
30. Radiation hardness of InWZnO thin film as resistive switching layer
31. Characterization of Ferroelectric Characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes
32. Surface potential mapping of p+/n-well junction by secondary electron potential contrast with in situ nano-probe biasing
33. High Responsivity Amorphous Indium Zinc Oxide Photo Sensor For In-cell Fingerprint Identification
34. Efficiency enhancement of non-selenized Cu(In,Ga)Se2 solar cells employing scalable low-cost antireflective coating
35. Improvement on thermal stability for indium gallium zinc oxide by oxygen vacancy passivation with supercritical fluid cosolvent oxidation
36. Highly Compatible Low Temperature Polycrystalline Silicon Oxide Technology for High-Resolution Display Backplane Applications
37. Strategy of Mitigating Breakdown Interference and Yield Loss in Crossbar Memory
38. Role of environmental and annealing conditions on the passivation-free in-Ga–Zn–O TFT
39. Numerical Analysis of Oxygen-Related Defects in Amorphous In-W-O Nanosheet Thin-Film Transistor
40. Study of InGaZnO Thin Film Transistors With Dual Treatment of Pre-Oxidation ZrO2 High-κ Dielectric and Post-Oxidation InGaZnO Channel by Neutral Beam System
41. Adjusting oxygen vacancy and resistance switching of InWZnO thin films by high-pressure oxidation technique
42. Ferroelectric Properties of HZO Ferroelectric Capacitors with Various Capping Electrodes and Annealing Conditions
43. Effects of Mg Doping on Double Channel Layer Atmospheric Pressure-Plasma Enhanced Chemical Vapor Deposition Fabricated Amorphous InGaZnO Thin Film Transistors
44. Impact of annealing environment on performance of InWZnO conductive bridge random access memory
45. Using electroless plating Cu technology for TFT-LCD application
46. Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film
47. 15‐3: Hydrogenated Amorphous Silicon Gate Driver on Array with Time‐Division Driving Method for In‐Cell Touch Liquid‐Crystal Display
48. Enhanced Electrical Characteristics of Ge nMOSFET by Supercritical Fluid CO2 Treatment With H2O2Cosolvent
49. Application of fluorine doped oxide (SiOF) spacers for improving reliability in low temperature polycrystalline thin film transistors
50. Performance enhancement of excimer laser crystallized poly-Si thin film transistors with fluorine implantation technology
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