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A 2.8 MM TPY heavy oil catalytic cracking unit in a refinery has been undergoing slurry recycling for about six months under low processing capacity. The recycling method involves injecting the recycled slurry into the mixed feedstock oil at the feedstock self-protection assembly and then into the feedstock oil nozzle. After calibration, the yield of coke increases from 7.86% to 8.41%, accounting for about 20% of the recycled slurry to produce coke. The diesel yield of the unit has increased, and about 50% of the recycled slurry has been converted or becomes high-value diesel products. The slurry recycling resulted in a decrease in the overall conversion rate of the unit, with a total reduction of 1.93 percentage points in the yields of dry gas, liquefied petroleum gas, and gasoline. During the recycling process of slurry, the unit monitors the feedstock oil and reaction system, and has not found any significant impact on coking in the reaction system, wear of the feedstock oil pipeline and nozzle, or other defects. Subsequent defect elimination inspections have also not found any abnormalities. Overall, the recycling of slurry increases the coke yield of the unit, ensures steam balance in the entire plant under low processing capacity, and effectively reduces the solid content of slurry, resulting in a decrease in the yield of slurry in the unit. [ABSTRACT FROM AUTHOR]

As display technology continues to advance, UVA micro‐LEDs are becoming increasingly important in a variety of display and beyond‐display applications. In this study, we investigate the optoelectronic characteristics of UVA micro‐LEDs based on a homogeneously epitaxial structure on freestanding gallium nitride (GaN) substrates. The device exhibits a central wavelength of 390 nm, positioned at the overlap of UVA and visible light spectra. It demonstrates an impressively low ideality factor of 1.49 at 2.86 V and a series resistance of 9.88 O beyond 3 V. Optically, our device shows virtually no wavelength shift across a wide current density range of 0.1‐1000 A/cm2, indicating exceptional optical stability and color accuracy. The emitted light is typical purple, reaching an expansive color gamut of 115.3% of Rec.2020. Furthermore, the GaN‐on‐GaN structure, with its superior crystal structure and heat dissipation properties, results in a very low droop ratio in EQE. This ensures sustained highpower output at high current densities, showcasing great potential in applications such as 3D printing, maskless photolithography, and fluorescence tagging. [ABSTRACT FROM AUTHOR]

As display technology continues to advance, UVA micro‐LEDs are becoming increasingly important in a variety of display and beyond‐display applications. In this study, we investigate the optoelectronic characteristics of UVA micro‐LEDs based on a homogeneously epitaxial structure on freestanding gallium nitride (GaN) substrates. The device exhibits a central wavelength of 390 nm, positioned at the overlap of UVA and visible light spectra. It demonstrates an impressively low ideality factor of 1.49 at 2.86 V and a series resistance of 9.88 Ω beyond 3 V. Optically, our device shows virtually no wavelength shift across a wide current density range of 0.1‐1000 A/cm2 , indicating exceptional optical stability and color accuracy. The emitted light is typical purple, reaching an expansive color gamut of 115.3% of Rec. 2020. Furthermore, the GaN‐on‐GaN structure, with its superior crystal structure and heat dissipation properties, results in a very low droop ratio in EQE. This ensures sustained high‐ power output at high current densities, showcasing great potential in applications such as 3D printing, maskless photolithography, and fluorescence tagging. [ABSTRACT FROM AUTHOR]

Aluminum Gallium Nitride (AlGaN) ultraviolet‐C (UV‐C) micro‐light‐emitting diodes (microLEDs) offer significant advantages in terms of convenience, cost‐effectiveness, and environmental friendliness, positioning them as promising candidates for display applications. However, achieving the desired high efficiency and scalability for large displays with ultra‐fine pixels necessitates substantial progress beyond current experimental outcomes. This study showcases the application of AlGaN UV‐C microLED display panels and micro‐displays incorporating quantum dots (QDs) for color conversion. Sidewall treatment and atomic layer deposited (ALD) passivation effectively address dangling bonds and etching damages, leading to a notable enhancement of TM‐polarized light extraction efficiency (LEE). Moreover, dedicated strain modulation efforts successfully reduce the high Al content (over 50%) wafer bowling effect, facilitating the modularization of ultrafine‐pitch AlGaN UV‐C microLED panels. Consequently, the devices achieve a peak performance of over 5% external quantum efficiency (EQE) as the mesa size scales down to 3 μm. The highlighted 0.18‐inch UV‐C microLED display panels, featuring a 9 μm pixel size, are precisely controlled by a CMOS IC driver to achieve desired patterns. Serving as an efficient pumping source for perovskite quantum dots paper (PQDP), this UV‐C microLED display suggests the potential to revolutionize the full‐color display industry by providing an innovative and unconventional solution. [ABSTRACT FROM AUTHOR]

Micro‐LED has received wide attention from researchers and has been applied into micro‐display technology due to its superior performance and development potential. However, The external quantum efficiency of Micro‐LED decreases with the decrease of size, due to an increase in the proportion of sidewall defects at smaller size. Therefore, the sidewall treatment of Micro‐LED is particularly important. In this study, the mechanism of the impact of H2 and NH3 plasma pre‐treatment on sidewalls and the subsequent effect of Al2O3 deposition on the electrical performance of the device were explored. The results demonstrate that plasma pre‐treatment with H2 and NH3, followed by Al2O3 deposition, effectively reduces surface defects, leakage current, and the ideality factor. [ABSTRACT FROM AUTHOR]

Aluminum Gallium Nitride (AlGaN) ultraviolet‐C (UV‐C) micro‐light‐emitting diodes (microLEDs) offer significant advantages in terms of convenience, cost‐effectiveness, and environmental friendliness, positioning them as promising candidates for display applications. However, achieving the desired high efficiency and scalability for large displays with ultra‐fine pixels necessitates substantial progress beyond current experimental outcomes. This study showcases the application of AlGaN UV‐C microLED display panels and micro‐displays incorporating quantum dots (QDs) for color conversion. Sidewall treatment and atomic layer deposited (ALD) passivation effectively address dangling bonds and etching damages, leading to a notable enhancement of TM‐polarized light extraction efficiency (LEE). Moreover, dedicated strain modulation efforts successfully reduce the high Al content (over 50%) wafer bowling effect, facilitating the modularization of ultrafine‐pitch AlGaN UV‐C microLED panels. Consequently, the devices achieve a peak performance of over 5% external quantum efficiency (EQE) as the mesa size scales down to 3 μm. The highlighted 0.18‐inch UV‐C microLED display panels, featuring a 9 μm pixel size, are precisely controlled by a CMOS IC driver to achieve desired patterns. Serving as an efficient pumping source for perovskite quantum dots paper (PQDP), this UV‐C microLED display suggests the potential to revolutionize the full‐color display industry by providing an innovative and unconventional solution. [ABSTRACT FROM AUTHOR]

As part of the national strategy to enhance fitness, mass sports development is continuously being promoted and facilitated. As the living standards of Chinese residents continue to improve, the demand for health for people of all ages is increasing. Basketball, a widely played and popular sport, has flourished in recent years and has gained the love of people from different age groups. As a vital sport in the national fitness strategic plan, basketball has laid a strong foundation for the progress and development of the national fitness strategic plan in China. However, the active development of basketball in the context of national fitness has also raised the bar for the level of competence in basketball, particularly in terms of professional theoretical knowledge, professional skills, and physical quality training for basketball referees. Thus, this paper aims to combine the advancements in fog computing and deep learning to further enhance the training of basketball referees. [ABSTRACT FROM AUTHOR]