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In this work, we propose, design and simulate a new configuration of Class AB dual output (DO) second‐generation current conveyor (DO‐CCII). Two versions of this new DO‐CCII configuration are proposed: one employing 32 nm technology‐based carbon nanotube field effect transistor (CNTFET) and the other employing the conventional complementary MOS (CMOS). The HSPICE simulation studies have been performed to evaluate key performance parameters like current and voltage gains, voltage and current bandwidths (BW), the port X and Y resistances, total harmonic distortion of both proposed DO‐CCII configurations. It has been seen that ~388× and ~215× improvement in current and voltage BWs respectively have been achieved in the proposed CNTFET based DO‐CCII (CNTFET‐DO‐CCII) configuration in comparison to its CMOS counterpart (CMOS‐DO‐CCII). Similarly, desired port X and Y resistances have resulted substantially in the CNTFET based DO‐CCII configuration. Further, to evaluate the performance of proposed DO‐CCIIs, some applications such as sinusoidal oscillator, integrator and differentiator have been simulated and compared. In the designed oscillators, the effect of temperature on oscillating frequency has also been studied. A temperature insensitive behavior has been seen in the CNTFET‐DO‐CCII for a wide frequency range. Furthermore, it has been found that the optimization of number of CNTs, CNT diameter and inter‐CNT pitch of CNTFETs improve the performance of the proposed DO‐CCII. [ABSTRACT FROM AUTHOR]

This paper investigates the impact of TiO2 high-k gate insulator on the electrical characteristics of AlGaN/AlN/GaN MOS-HEMT transistors using MATLAB and Atlas-TCAD simulation software. The physical analytical model of the MOS-HEMTs is used for simulation from Al2O3, HfO2, and TiO2 as the gate dielectric materials, which provide higher performance and reliability of the MOS-HEMT devices. The device shows a good improvement in its result of the DC and AC characteristics with different permittivity of insulator materials. Thus, the DC and AC performance of GaN MOS-HEMTs is higher than with other insulators, such as Al2O3 and HfO2 by using TiO2 as the gate dielectric. Moreover, the simulation results proved that TiO2 is the better gate dielectric material to enhance the electrical reliability of the power switching devices for hightemperature applications such as electric automobiles. [ABSTRACT FROM AUTHOR]