16 results on '"Loesing, Rainer"'
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2. Study of phosphorus doped Si:C films formed by in situ doped Si epitaxy and implantation process for n-type metal-oxide-semiconductor devices
3. Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
4. Cross-sectional atom probe tomography sample preparation for improved analysis of fins on SOI
5. Practical Considerations in Quantitative Nanoscale Energy-Dispersive X-ray Spectroscopy (EDX) and Its Application in SiGe
6. Study of phosphorus doped Si:C films formed by in situ doped Si epitaxy and implantation process for n-type metal-oxide-semiconductor devices.
7. Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices.
8. Activation of Implanted n-Type Dopants in Ge Over the Active Concentration of 1×10[sup 20] cm[sup −3] Using Coimplantation of Sb and P
9. Effect of Ion Implantation and Anneals on Fully-strained SiC and SiC:P Films using Multiple Characterization Techniques
10. Process and Electrical Characteristics of MO-ALD HfO2 Films for High-k Gate Applications Grown in a Production Worthy 300 mm Deposition System
11. Strained Si Channel MOSFETs with Embedded Silicon Carbon Formed by Solid Phase Epitaxy
12. Hafnium oxide gate dielectrics on sulfur-passivated germanium
13. Activation of Implanted n-Type Dopants in Ge Over the Active Concentration of 1?×?1020 cm???3 Using Coimplantation of Sb and P
14. Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
15. Development of High Resolution Depth Profiling of Ultra Shallow Dopant Implants with SIMS
16. Activation of Implanted n-Type Dopants in Ge Over the Active Concentration of 1 × 1020cm− 3Using Coimplantation of Sb and P
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