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Linear in the wave-vector terms of an electron Hamiltonian play an important role in topological insulators and spintronic devices. Here we demonstrate how an external electric field controls the magnitude of a linear-in-K term in the exciton Hamiltonian in wide GaAs quantum wells. The dependence of this term on the applied field in a high quality sample was studied by means of the differential reflection spectroscopy. An excellent agreement between the experimental data and the results of calculations using semi-classical non-local dielectric response model confirms the validity of the method and paves the way for the realisation of excitonic Datta-and-Das transistors. In full analogy with the spin-orbit transistor proposed by Datta and Das [Appl. Phys. Lett. {\bf 56}, 665 (1990)], the switch between positive and negative interference of exciton polaritons propagating forward and backward in a GaAs film is achieved by application of an electric field with non-zero component in the plane of the quantum well layer., Comment: 30 pages, 6 figures

In this study, analysis of shell and tube heat exchanger (HE) is performed. Theory part on heat transfer, calculation of heat exchanger and general thermal and hydrological properties are described. Several models are developed and computed in different cases: plain tubes and twisted tubes; common and separated inlet and outlet; heat exchanger with different baffles and geometry inside a shell; changed gas matter, tube's material, tube's thickness; modification of inlet and outlet. Twisted tubes shows better heat transfer efficiency than plain tubes. Baffles increase intensity of water mixing but dead zones can be formed in some cases. Length of air inlet and outlet influence on temperature distribution that is important for location of measuring systems. Experimental setup for a gas-liquid case is being created to verify the modelling and test new heat exchanger.

It is experimentally shown that the pressure applied along the twofold symmetry axis of a heterostructure with a wide GaAs/AlGaAs quantum well leads to considerable modification of the polariton reflectance spectra. This effect is treated as the stress-induced decrease of the heavy-hole exciton mass. Theoretical modeling of the effect supports this assumption. The 5\%-decrease of the exciton mass is obtained at pressure P=0.23 GPa., Comment: 6 pages, 5 figures

A theory of polaritonic states is developed for a nanostructure with a wide quantum well stressed perpendicular to the growth axis of the heterostructure. The role of the $K$-linear terms appearing in the exciton Hamiltonian under the stress is discussed. Exciton reflectance spectra are theoretically modeled for the nanostructure. It is predicted that the spectral oscillations caused by interference of the exciton-like and photon-like polariton modes disappear with the increase of applied pressure and then appear again with opposite phase relative to that observed at low pressure. Effects of gyrotropy and convergence of masses of excitons with heavy and light holes due to their mixing by the deformation is also considered. Numerical estimates performed for the GaAs wells show that these effects can be experimentally observed at pressure $P < 1$~GPa for the well widths of a fraction of micron., Comment: 13 pages, 8 figures