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27 results on '"Long, Junhua"'

13. 倒置GaInP/GaAs/InGaAs三结太阳电池失效分析

Author

Zhang Yi, 张怡, primary, Long Junhua, 龙军华, additional, Sun Qiangjian, 孙强健, additional, Xuan Jingjing, 宣静静, additional, Li Xuefei, 李雪飞, additional, Wang Xia, 王霞, additional, Chen Zhitao, 陈志韬, additional, Wu Xiaoxu, 吴晓旭, additional, and Lu Shulong, 陆书龙, additional

Published
2022
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14. The Property of ITO Produced by Optical Thin Film Coating for Solar Cell

Author

Lu Shulong, Dai Pan, Long Junhua, and Chen Feixue

Subjects
Materials science, Silicon, business.industry, Band gap, chemistry.chemical_element, Substrate (electronics), law.invention, Indium tin oxide, chemistry, law, Solar cell, Tauc plot, Transmittance, Optoelectronics, business, Refractive index
Abstract

We studied the crystal quality and optical properties of ITO produced with optical thin film coatings to replace conventional metal electrodes as electrodes for III-V solar cells. ITO films were grown on glass, GaAs and silicon substrate. ITO is a polycrystalline with predominant (222) crystalline plane. A smooth surface with protruding nano-crystallite was observed. The light transmittance of ITO has a strong relationship with thickness and annealing temperature. The transmittance was obviously enhanced after being annealed at 500 °C. With the thickness increase, the transmittance decreases in total. The band gap of the ITO film was estimated 3.8 eV by extrapolating the linear part of the Tauc plot curves to intercept the energy axis. The refractive index n of ITO film is was measured. The reflectivity is greatly influenced by the thickness of ITO.

Published
2020
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16. 倒置GaInP/GaAs/InGaAs三结太阳电池失效分析

Author

张怡 Zhang Yi, 龙军华 Long Junhua, 孙强健 Sun Qiangjian, 宣静静 Xuan Jingjing, 李雪飞 Li Xuefei, 王霞 Wang Xia, 陈志韬 Chen Zhitao, 吴晓旭 Wu Xiaoxu, and 陆书龙 Lu Shulong

Subjects
Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials
Published
2022
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24. Failure analysis of thin‐film four‐junction inverted metamorphic solar cells.

Author

Long, Junhua, Wu, Dongying, Huang, Xinping, Ye, Sai, Li, Xuefei, Ji, Lian, Sun, Qiangjian, Song, Minghui, Xing, Zhiwei, and Lu, Shulong

Subjects
SILICON solar cells, SOLAR cells, SECONDARY ion mass spectrometry, FAILURE analysis, PHOTOELECTRIC cells, PHOTOVOLTAIC power systems, CHEMICAL vapor deposition, PHOTOELECTRICITY
Abstract

Inverted metamorphic solar cells play an important role in the field of photovoltaics, because it can directly grow stacked tandem junctions with different bandgaps according to the spectrum. We have found that the four‐junction AlGaInP/AlGaAs/InGaAs/InGaAs solar cells with the bandgap of 1.96/1.55/1.17/0.83 eV on the basis of the inverted metamorphic three‐junction AlGaInP/AlGaAs/InGaAs materials will cause a serious decrease in short‐circuit current density but with a normal open‐circuit voltage. The sharp decrease in short‐circuit current density is not attributed to the mismatched buffers dislocations penetrating into the active region of the InGaAs subcells but resulted from the minority carrier recombination due to defects in the AlGaInP subcell, which is observed directly from transmission electron microscopy, external quantum efficiency, electroluminescence, and secondary ion mass spectrometry measurements. The process of growing AlGaInP materials by metal–organic chemical vapor deposition easily introduces Al‐O deep‐level defects, resulting in the poor collection of minority carriers in AlGaInP materials. After improving the growth conditions of AlGaInP materials, a four‐junction solar cell with a photoelectric conversion efficiency of 34.9% and an open‐circuit voltage of 3.53 V was obtained. [ABSTRACT FROM AUTHOR]

Published
2021
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