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Oxygen vacancy engineered SnO2/WS2 heterostructures are constructed by an effective hydrothermal process to improve the sensitivity/selectivity and realize low operating temperature. The response (Rg/Ra) of the hybrid to 5 ppm NO was 6.24 at 75 °C.

Kinetic control over structures and functions of complex assembly systems has aroused widespread interest. Understanding the complex pathway and transient intermediates is helpful to decipher how multiple components evolve into complex assemblies. However, for supramolecular polymerizations, thorough and quantitative kinetic analysis is often overlooked. Challenges remain in collecting the information of structure and content of transient intermediates

The linear dichroism (LD) conversion shows promising applications for polarized detectors, optical transition and light propagation. However, polarity reversal always occurs at a certain wavelength in LD materials, which can only distinguish two wavelength bands as wavelength-selective photodetectors. In this study, the multi-degree-of-freedom of optical anisotropy based on 2D PdPS flakes is carefully described, in which four critical switching wavelengths are observed. Remarkably, the quadruple LD conversion shows a significant wavelength-dependent behavior, allowing us to pinpoint five wavelength bands, 200-239 nm, 239-259 nm, 259-469 nm, 469-546 nm, and 546-700 nm, for a wavelength-selective approach to photodetectors. In addition, the polarized photoresponse under 532 nm was realized with an anisotropy factor of ∼1.51 and further illustrated the in-plane anisotropy. Raman spectroscopy of PdPS flakes also shows strong phonon anisotropy. The unique wavelength-selective property shows great potential for the miniaturization and integration of photodetectors.

Being capable of sensing broadband infrared (IR) light is vitally important for wide-ranging applications from fundamental science to industrial purposes. Two-dimensional (2D) topological semimetals are being extensively explored for broadband IR detection due to their gapless electronic structure and the linear energy dispersion relation. However, the low charge separation efficiency, high noise level, and on-chip integration difficulty of these semimetals significantly hinder their further technological applications. Here, we demonstrate a facile thermal-assisted tellurization route for the van der Waals (vdW) growth of wafer-scale phase-controlled 2D MoTe

Broadband photodetectors are of great importance for numerous optoelectronic applications. Two-dimensional (2D) tungsten disulfide (WS2), an important family member of transition-metal dichalcogenides (TMDs), has shown great potential for high-sensitivity photodetection due to its extraordinary properties. However, the inherent large bandgap of WS2 and the strong interface recombination impede the actualization of high-sensitivity broadband photodetectors. Here, we demonstrate the fabrication of an ultrabroadband WS2/Ge heterojunction photodetector through defect engineering and interface passivation. Thanks to the narrowed bandgap of WS2 induced by the vacancy defects, the effective surface modification with an ultrathin AlOx layer, and the well-designed vertical n-n heterojunction structure, the WS2/AlOx/Ge photodetector exhibits an excellent device performance in terms of a high responsivity of 634.5 mA/W, a large specific detectivity up to 4.3 × 1011 Jones, and an ultrafast response speed. Significantly, the device possesses an ultrawide spectral response spanning from deep ultraviolet (200 nm) to mid-wave infrared (MWIR) of 4.6 μm, along with a superior MWIR imaging capability at room temperature. The detection range has surpassed the WS2-based photodetectors in previous reports and is among the broadest for TMD-based photodetectors. Our work provides a strategy for the fabrication of high-performance ultrabroadband photodetectors based on 2D TMD materials.

There is an emerging need for high-sensitivity solar-blind deep ultraviolet (DUV) photodetectors with an ultra-fast response speed. Although nanoscale devices based on Ga2O3 nanostructures have been developed, their practical applications are greatly limited by their slow response speed as well as low specific detectivity. Here, the successful fabrication of two-/three-dimensional (2D/3D) graphene (Gr)/PtSe2/β-Ga2O3 Schottky junction devices for high-sensitivity solar-blind DUV photodetectors is demonstrated. Benefitting from the high-quality 2D/3D Schottky junction, the vertically stacked structure, and the superior-quality transparent graphene electrode for effective carrier collection, the photodetector is highly sensitive to DUV light illumination and achieves a high responsivity of 76.2 mA/W, a large on/off current ratio of ~ 105, along with an ultra-high ultraviolet (UV)/visible rejection ratio of 1.8 × 104. More importantly, it has an ultra-fast response time of 12 µs and a remarkable specific detectivity of ~ 1013 Jones. Finally, an excellent DUV imaging capability has been identified based on the Gr/PtSe2/β-Ga2O3 Schottky junction photodetector, demonstrating its great potential application in DUV imaging systems.

Topological Dirac semimetals made of two-dimensional transition-metal dichalcogenides (TMDCs) have attracted enormous interest for use in electronic and optoelectronic devices because of their electron transport properties. As van der Waals materials with a strong interlayer interaction, these semimetals are expected to support layer-dependent plasmonic polaritons yet to be revealed experimentally. Here, we demonstrate the apparent retardation and attenuation of mid-infrared (MIR) plasmonic waves in type-II Dirac semimetal platinum tellurium (PtTe2) nanoribbons and nanoflakes by near-field nanoimaging. The attenuated dispersion relations for the plasmonic modes in the PtTe2 nanoribbons (15-25 nm thick) extracted from the near-field standing-wave patterns are applied for the fitting of PtTe2 permittivity in the MIR regime, indicating that both free carriers and Dirac fermions are involved in MIR light-matter interaction in PtTe2. The annihilation of plasmonic modes in the ultrathin (

Sex-bias is more obvious in several autoimmune disorders, but not in psoriasis. However, estrogen levels fluctuate during puberty, menstrual cycle, pregnancy, and menopause, which are related to variations in psoriasis symptoms observed in female patients. Estrogen has disease promoting or ameliorating functions based on the type of immune responses and tissues involved. To investigate the effects of estrogen on psoriasis, at first, we developed an innate immunity dependent mannan-induced psoriasis model, which showed a clear female preponderance in disease severity in several mouse strains. Next, we investigated the effects of endogenous and exogenous estrogen using ovariectomy and sham operated mice. 17-β-estradiol (E2) alone promoted the skin inflammation and it also significantly enhanced mannan-induced skin inflammation. We also observed a prominent estrogen receptor-β (ER-β) expression in the skin samples, especially on keratinocytes. Subsequently, we confirmed the effects of E2 on psoriasis using ER-β antagonist (PHTPP) and agonist (DPN). In addition, estrogen was found to affect the expression of certain genes (vgll3 and cebpb), microRNAs (miR146a and miR21), and immune cells (DCs and γδ T cells) as well as chemokines (CCL5 and CXCL10) and cytokines (TNF-α, IL-6, IL-22, IL-23, and IL-17 family), which promoted the skin inflammation. Thus, we demonstrate a pathogenic role for 17-β-estradiol in promoting skin inflammation, which should be considered while designing new treatment strategies for psoriasis patients.

As a novel family of 2D materials, MXenes are supposed to play a vital role in optoelectronic devices and systems due to their high conductivity, good optical properties, and favorable compatibility with water and organic solvents. However, the application of MXenes in highly sensitive photodetection is far scarcely investigated. Here, we demonstrate high-quality Ti3C2Tx/GaAs Schottky junction by simply dripping Ti3C2Tx MXene solution on a pre-patterned GaAs substrate. Owing to the wide absorption of MXene and the good quality junction, the self-driven Ti3C2Tx/GaAs Schottky junction photodetector with an impressive performance is realized. The assembled photodetector exhibits a high sensitivity over a wide waveband with a good responsivity of ~1.46 A/W, a large specific detectivity of ~1.23 × 1013 Jones, and a high Ilight/Idark ratio of 5.6 × 105. Significantly, the photodetector is capable of sensing infrared light signal up to 980 nm which exceeds the absorption edge of GaAs (874 nm) due to the generation of hot electrons in Ti3C2Tx MXene film. Given the superior device performance along with a simple and facile fabrication method, the Ti3C2Tx/GaAs Schottky junction photodetector may find the great potential in high performance broadband, self-driven photodetection applications.

The new discovery of two-dimensional (2D) palladium diselenide (PdSe2) films has attracted intensive research interest due to their unique asymmetric crystal structure and extraordinary optoelectronic properties, showing great potential for broadband and polarization photodetection. Herein, we have developed for the first time a self-driven, highly polarization-sensitive, broadband photovoltaic detector based on a PdSe2/Si nanowire array (SiNWA) heterostructure. Owing to the strong light confinement effect of the SiNWA and broadband light absorption of PdSe2, the present device exhibits pronounced photovoltaic behavior and excellent performance in terms of a high responsivity of 726 mA W−1, a large specific detectivity of 3.19 × 1014 Jones, an ultrabroad spectrum response range of 0.2–4.6 μm, and a fast response speed to monitor nanosecond pulsed light signals. Significantly, an impressive polarization sensitivity of 75 is achieved for the heterostructure device, which is among the highest for 2D material-based photodetectors. Thanks to the outstanding imaging capability, the detector can record images in both near infrared (NIR) and mid-infrared (MIR) ranges with a decent resolution. Moreover, the device exhibits light-enhanced humidity sensing behavior with a high sensitivity and a fast response/recovery time. Given these remarkable device features, the PdSe2/SiNWA heterostructure will hold great promise for high-performance, polarization-sensitive broadband photodetection, infrared imaging and humidity sensing applications.

Polarization-sensitive photodetection in a broad spectrum range is highly desired due to the great significance in military and civilian applications. Palladium diselenide (PdSe2), a newly explored air-stable, group 10 two-dimensional (2D) noble metal dichalcogenide with a puckered pentagonal structure, holds promise for polarization-sensitive photodetection. Herein, we report a highly polarization-sensitive, broadband, self-powered photodetector based on graphene/PdSe2/germanium heterojunction. Owing to the enhanced light absorption of the mixed-dimensional van der Waals heterojunction and the effective carrier collection with graphene transparent electrode, the photodetector exhibits superior device performance in terms of a large photoresponsivity, a high specific detectivity, a fast response speed to follow nanosecond pulsed light signal, and a broadband photosensitivity ranging from deep ultraviolet (DUV) to mid-infrared (MIR). Significantly, highly polarization-sensitive broadband photodetection with an ultrahigh polarization sensitivity of 112.2 is achieved, which represents the best result for 2D layered material-based photodetectors. Further, we demonstrated the high-resolution polarization imaging based on the heterojunction device. This work reveals the great potential of 2D PdSe2 for high-performance, air-stable, and polarization-sensitive broadband photodetectors.

Broadband photodetectors are of great importance for numerous optoelectronic applications. Two-dimensional (2D) tungsten disulfide (WS

Phospholipase Cγ1 (PLCγ1) hydrolyzes PIP2 to generate IP3 and DAG to transduce T cell receptor (TCR) signaling. Zeng et al. show that PLCγ1 promotes phase separation of the TCR pathway by crosslinking LAT and protecting LAT from CD45-mediated dephosphorylation., The T cell receptor (TCR) pathway receives, processes, and amplifies the signal from pathogenic antigens to the activation of T cells. Although major components in this pathway have been identified, the knowledge on how individual components cooperate to effectively transduce signals remains limited. Phase separation emerges as a biophysical principle in organizing signaling molecules into liquid-like condensates. Here, we report that phospholipase Cγ1 (PLCγ1) promotes phase separation of LAT, a key adaptor protein in the TCR pathway. PLCγ1 directly cross-links LAT through its two SH2 domains. PLCγ1 also protects LAT from dephosphorylation by the phosphatase CD45 and promotes LAT-dependent ERK activation and SLP76 phosphorylation. Intriguingly, a nonmonotonic effect of PLCγ1 on LAT clustering was discovered. Computer simulations, based on patchy particles, revealed how the cluster size is regulated by protein compositions. Together, these results define a critical function of PLCγ1 in promoting phase separation of the LAT complex and TCR signal transduction.

SummaryThe T cell receptor (TCR) pathway receives, processes, and amplifies the signal from pathogenic antigens to the activation of T cells. Although major components in this pathway have been identified, the knowledge on how individual components cooperate to effectively transduce signals remains limited. Phase separation emerges as a biophysical principle in organizing signaling molecules into liquid-like condensates. Here we report that phospholipase PLCγ1 promotes phase separation of LAT, a key adaptor protein in the TCR pathway. PLCγ1 directly crosslinks LAT through its two SH2 domains. PLCγ1 also protects LAT from dephosphorylation by the phosphatase CD45 and promotes LAT-dependent ERK and SLP76 activation. Intriguingly, a non-monotonic effect of PLCγ1 on LAT clustering was discovered. Computer simulations, based on patchy particles, revealed how the cluster size is regulated by protein compositions. Together, these results define a critical function of PLCγ1 in promoting phase separation of the LAT complex and TCR signal transduction.

Mid-infrared (MIR) photodetection, covering diverse molecular vibrational regions and atmospheric transmission windows, is vital to civil and military purposes. Versatile use of MIR photodetectors is commonly dominated by HgCdTe alloys, InSb, and quantum superlattices, which are limited by strict operation demands, high-cost, and environmental toxicity. Despite the rapid advances of black phosphorus (BP)-based MIR photodetectors, these are subject to poor stability and large-area integration difficulty. Here, the van der Waals (vdW) epitaxial growth of a wafer-scale 2D platinum ditelluride (PtTe2 ) layer is reported via a simple tellurium-vapor transformation approach. The 2D PtTe2 layer possesses a unique mosaic-like crystal structure consisting of single-crystal domains with highly preferential [001] orientation along the normal direction, reducing the influence of interface defects and ensuring efficient out-of-plane carrier transportation. This characteristic, combined with the wide absorption of PtTe2 and well-designed vertical device architecture, makes the PtTe2 /Si Schottky junction photodetector capable of sensing ultra-broadband light of up to 10.6 µm with a high specific detectivity. Also, the photodetector exhibits an excellent room-temperature infrared-imaging capability. This approach provides a new design concept for high-performance, room-temperature MIR photodetection based on 2D layered materials.

Topological Dirac semimetals made of two-dimensional transition-metal dichalcogenides (TMDCs) have attracted enormous interest for use in electronic and optoelectronic devices because of their electron transport properties. As van der Waals materials with a strong interlayer interaction, these semimetals are expected to support layer-dependent plasmonic polaritons yet to be revealed experimentally. Here, we demonstrate the apparent retardation and attenuation of mid-infrared (MIR) plasmonic waves in type-II Dirac semimetal platinum tellurium (PtTe

The high-performance broadband photodetectors have attracted intensive scientific interests due to their potential applications in optoelectronic systems. Despite great achievements in two-dimensional (2D) materials based photodetectors such as graphene and black phosphorus, obvious disadvantages such as low optical absorbance and instability preclude their usage for the broadband photodetectors with the desired performance. An alternative approach is to find promising 2D materials and fabricate heterojunction structures for multifunctional hybrid photodetectors. In this work, 2D WS2/Si heterojunction with a type-II band alignment is formed in situ. This heterojunction device produced a high Ion/Ioff ratio over 10,6 responsivity of 224 mA/W, specific detectivity of 1.5 × 1012 Jones, high polarization sensitivity, and broadband response up to 3043 nm. Furthermore, a 4 × 4 device array of WS2/Si heterojunction device is demonstrated with high stability and reproducibility. These results suggest that the WS2...

MoS2/PMMA composite bulks have been successfully fabricated by homogeneously incorporating 2D layered MoS2 nanosheets into solid-state PMMA. The ultrafast nonlinear optical (NLO) properties of these MoS2/PMMA composite bulks excited by 800 nm ultrafast laser sources in the picosecond (ps) or femtosecond (fs) domains were investigated systematically for the first time. The dependence of optical-limiting performance with respect to the MoS2 concentration in the samples and the excitation pulse duration was studied in detail. It was found that the optical-limiting response increases with the concentration of MoS2 nanosheets in the PMMA matrix, and it decreases with the excitation pulse duration, respectively. The optical-limiting response under 100 fs excitation was much stronger than that under the 10 ps excitation pulse. Upon excitation by 100 fs laser pulses, the MoS2/PMMA composite exhibits an optical limiting starting threshold of 21.5 mJ cm−2, an optical limiting threshold of 315.1 mJ cm−2, and a limiting differential transmittance of 1.6%, respectively, and these values, to the best of our knowledge, are lower than those of other bulk nanomaterials, such as Fe2O3, C60, or Se doped silica xerogel, reported previously with a similar transmittance level (85%). These results have opened the door for highly efficient 2D-dichalcogenides/PMMA composite based optical limiters for ultrafast laser pulses and have great practical significance for the manufacture of high-quality solid-state optical limiters with low optical loss, high reliability and low cost.

The persistent pursuit of broadband photodetectors derives from their unique properties for promising applications such as optoelectronic devices, imaging sensors, and neuromorphic computing. Here, we fabricated high-performance, ultra-wide spectral response (250–1064 nm) and easy-processing spin-deposition photodetector based on amorphous germanium sulfide (a-GeS) films by using Ti3C2T x transparent electrodes as contacts. In addition, photodetectors based MXenes contacts have larger photocurrent compared with Au contacts because MXenes conductive films have larger photo-responsive active areas and the surface plasmon-assisted hot carriers generated by the laser irradiation on MXenes. As-prepared photodetectors based on MXenes electrodes exhibit a photo-to-dark current ratio of up to 3.91 × 102 under a bias of 8 V, coupled with the response speed of 59 ms, photoresponsivity (166 mA W−1) and high detectivity (4.41 × 1010 Jones). This work combining amorphous materials with highly conductive MXene film has excellent application prospects for ultra-wide spectral response optoelectronic devices.

Tunable multi-wavelength mode-locked ytterbium-doped fiber laser is realized by using ultrathin graphitic carbon nitride (g-C3N4) nanosheets as saturable absorber. g-C3N4 nanosheets with an average thickness of 3.5 nm are obtained through liquid-phase ultrasonic exfoliation of g-C3N4 powder prepared by high temperature sintering. Passively mode-locked ytterbium-doped fiber laser was obtained by using the g-C3N4 nanosheets coated D-shaped fiber as saturable absorber. It is interesting that tunable dual-, triple- and quadruple-wavelength mode-locked lasers were obtained by adjusting the pump power and polarization controller. And the maximum average output power of the mode-locked laser can reach 10.32 mW. The pulse width of the quadruple-wavelength mode-locked laser is 1.9 ns, with a working repetition of 11.2 MHz. To our best knowledge, this is the first time reporting this tunable multi-wavelength mode-locking phenomenon based on g-C3N4.

The research of ultraviolet photodetectors (UV PDs) have been attracting extensive attention, due to their important applications in many areas. In this study, PtSe2/GaN heterojunction is in-situ fabricated by synthesis of large-area vertically standing two-dimensional (2D) PtSe2 film on n-GaN substrate. The PtSe2/GaN heterojunction device demonstrates excellent photoresponse properties under illumination by deep UV light of 265 nm at zero bias voltage. Further analysis reveals that a high responsivity of 193 mA·W–1, an ultrahigh specific detectivity of 3.8 × 1014 Jones, linear dynamic range of 155 dB and current on/off ratio of ~ 108, as well as fast response speeds of 45/102 μs were obtained at zero bias voltage. Moreover, this device response quickly to the pulse laser of 266 nm with a rise time of 172 ns. Such high-performance PtSe2/GaN heterojunction UV PD demonstrated in this work is far superior to previously reported results, suggesting that it has great potential for deep UV detection.

The rich variety and attractive properties of two-dimensional (2D) layered nanomaterials provide an ideal platform for fabricating next generation of advanced optoelectronic devices. Recently, a newly discovered 2D layered PtSe2 thin film has exhibited outstanding broadband sensitivity and optoelectronic properties. In our work, a large-area 2D layered PtSe2 thin film was used to construct the PtSe2/CdTe heterojunction infrared photodetector (PD). This PD exhibited a broad detection range coverage from 200 to 2000 nm with a high responsivity of 506.5 mA/W, a high specific detectivity of 4.2 × 1011 Jones, a high current on/off ratio of 7 × 106, and a fast response speed of 8.1/43.6 μs at room temperature. Additionally, the PtSe2/CdTe heterojunction PD exhibits excellent repeatability and stability in air. The high-performance of the PtSe2/CdTe heterojunction PD demonstrated in this work reveals that it has great potential to be used for broadband infrared detection.

The newly discovered Group-10 transition metal dichalcogenides (TMDs) like PtSe2 have promising applications in high-performance microelectronic and optoelectronic devices due to their high carrier mobilities, widely tunable bandages and ultrastabilities. However, the optoelectronic performance of broadband PtSe2 photodetectors integrated with silicon remains undiscovered. Here, we report the successful preparation of large-scale, uniform and vertically grown PtSe2 films by simple selenization method for the design of a PtSe2/Si nanowire array heterostructure, which exhibited a very good photoresponsivity of 12.65 A/W, a high specific detectivity of 2.5 × 1013 Jones at −5 V and fast rise/fall times of 10.1/19.5 μs at 10 kHz without degradation while being capable of responding to high frequencies of up to 120 kHz. Our work has demonstrated the compatibility of PtSe2 with the existing silicon technology and ultrabroad band detection ranging from deep ultraviolet to optical telecommunication wavelengths, which can largely cover the limitations of silicon detectors. Further investigation of the device revealed pronounced photovoltaic behavior at 0 V, making it capable of operating as a self-powered photodetector. Overall, this representative PtSe2/Si nanowire array-based photodetector offers great potential for applications in next-generation optoelectronic and electronic devices. Aligning ultra-thin semiconductors with silicon nanowires enables high-speed sensing of an unusually broad range of ultraviolet, visible, and infrared light frequencies. The shapes of silicon nanowires enable quicker and more effective light detection than conventional thin films, but their spectral response still falls outside the parameters needed for various applications, including optical telecommunication. Researchers led by Di Wu from China’s Zhengzhou University and Yuen Hong Tsang at Hong Kong Polytechnic University turned to the broadband absorption of graphene-like platinum selenide (PtSe2) films to extend the light sensitivity. To parallel the geometry of nanowires, the team used precision deposition techniques to grow 2D PtSe2 films into vertically-oriented layers, some tens of nanometers thick. Direct transfer of the PtSe2 film onto a large-scale nanowire array produced a microsecond-fast device sensitive to multiple optical bands. Platinum diselenide (PtSe2) is a newly discovered Group-10 transition metal dichalcogenide (TMD) which has unique electronic properties, in particular a semimetal-to-semiconductor transition. In this work, we have demonstrated the proposed vertically standing layered structure PtSe2 nanofilms based on hybrid heterojunction with high overall performance was realized for broadband light photodetection ranging from 200 nm to 1550 nm. The high-performance broadband photodetector will open up a new pathway for the development of next-generation two dimensional Group-10 materials based optoelectronic devices.

We report on the large-scale synthesis of polycrystalline multilayer PtSe2 film with typical semimetallic characteristics. With the availability of the large-area film, we constructed a heterojunction composed of multilayer PtSe2 and Cs-doped FAPbI3, which can function as a self-driven photodetector in a broadband wavelength from the ultraviolet to the near-infrared region. Further photoresponse analysis revealed that the heterojunction device showed outstanding photosensitive characteristics with a large Ilight/Idark ratio of 5.7 × 103, high responsivity of 117.7 mA W–1, and decent specific detectivity of 2.91 × 1012 Jones at zero bias. More importantly, the rise/fall times were estimated to be 78/60 ns, rendering our device the fastest device among perovskite-2D photodetectors reported to date. In addition, it was also observed that the PtSe2/perovskite photodetector can almost retain its photoresponse properties after storage in ambient conditions for 3 weeks. This study suggests the potential of the p...

Graphene oxide (GO) has been the focus of attention as it can enhance the photocatalytic activity of semiconductors due to its large specific surface area and remarkable optical and electronic properties. However, the enhancing effect is not ideal because of its easy self-agglomeration and low electronic conductivity. To improve the enhancing effect of GO for ZnO, three-dimensional GO/MoS2 composite carriers (3D GOM) were prepared by electrostatic interactions and then, Mg-doped ZnO nanoparticles (MZ) were supported on the surface of 3D GOM by utilizing the layer-by-layer assembly method. Compared with GO/Mg-ZnO composite (GOMZ), the resultant three-dimensional GO/MoS2/Mg-ZnO composite (GOMMZ) exhibited excellent photocatalytic performance due to the effective synergistic effect between GO and MoS2 sheet, and its degradation rate was nearly 100% within 120 min of exposure to visible light; this degradation rate was nearly 8 times higher than that of the GOMZ composite. Moreover, the introduction of the MoS2 sheet intensified the photocurrent density of the GOMZ composite and endowed it with optical memory ability.

Two-dimensional group-10 transition metal dichalcogenides have recently attracted increasing research interest because of their unique electronic and optoelectronic properties. Herein, we present vertical hybrid heterojunctions of multilayered PtSe2 and Si, which take advantage of large-scale homogeneous PtSe2 films grown directly on Si substrates. These heterojunctions show obvious rectifying behavior and a pronounced photovoltaic effect, enabling them to function as self-driven photodetectors operating at zero bias. The photodetectors can operate in both photovoltage and photocurrent modes, with responsivity values as high as 5.26 × 106 V W-1 and 520 mA W-1 at 808 nm, respectively. The Ilight/Idark ratio, specific detectivity, and response speed are 1.5 × 105, 3.26 × 1013 Jones, and 55.3/170.5 μs, respectively. Furthermore, the heterojunctions are highly sensitive in a broad spectral region ranging from deep ultraviolet to near-infrared (NIR) (200-1550 nm). Because of the strong NIR light absorption of PtSe2, the heterojunctions exhibit photocurrent responsivities of 33.25 and 0.57 mA W-1 at telecommunication wavelengths of 1310 and 1550 nm, respectively. Considering the excellent performance of the PtSe2/Si heterojunctions, they are highly suitable for application in high-performance broadband photodetectors. The generality of the above results also signifies that the proposed in situ synthesis method has great potential for future large-scale optoelectronic device integration.

In this study, we have successfully demonstrated a method of greatly modifying the nonlinear saturable absorption (SA) properties of WS2 nanofilms by controlling their thickness and morphology via magnetron sputtering deposition times. The nonlinear SA properties of these nanofilms were also investigated systematically under excitation by laser pulses with various durations in the fs, ps and ns ranges, and prominent ultrafast SA parameters were demonstrated for different pulse durations in the fs, ps and ns ranges. A pulse width-dependent theoretical model of SA that considers the effects of interband exciton recombination has now been proposed for the first time. Two analytical expressions for calculating the variation of key SA parameters (the onset fluence Fon and the modulation depth ΔT) with the excitation laser pulse width have been derived and experimentally verified. The theoretical model and analytical expressions have great value for understanding and interpreting the variation of the SA behaviors of 2D nanofilms in the fs, ps and ns regions, and for the developments of ultrafast lasers and nanosecond lasers based on 2D materials. These studies open up exciting avenues for engineering the SA properties of 2D nanofilms for a wide range of laser photonic devices and applications.

Color imaging experiment demonstrates a photochromic behavior of mixed-halide perovskites upon dark and light excitation, while the color emitted by the crystals changes from red to yellow and vice versa with the intensity of excitation light source. Unlike the photochromic property commonly observed in solution-state polymer materials, solid-state perovskite materials with photochromic behavior might open wide applications in consumer products and electronic devices. In the next part, we report on a reversible photoluminescence (PL) peak in iodide-based organic-inorganic lead halide perovskite materials under a 2-photon absorption process, while tuning the excitation wavelength. Intriguingly, two shorter wavelength peaks are visible and become prominent when the excitation photon energy is being tuned in the high energy spectrum, while laser power is remained constant. The same phenomenon of reversible PL peak is also observed in various iodine-based organic-inorganic halides as well as all-inorganic perovskite single crystals and polycrystals. We attribute to the reversible PL peak phenomenon to the photoinduced structural deformation and the associated change in the optical bandgap of iodide perovskites under the femtosecond laser excitation. Our findings will introduce a degree of freedom in future research as well as adding functionalities to optoelectronic applications in these emerging perovskite materials-based devices.

Layered transition-metal dichalcogenides (TMDCs) have received great interest due to their potential applications in many fields including electronics, optoelectronics, electrochemical hydrogen production and so on. Recent research effort on the development of effective hydrogen evolution reaction (HER) is to modulate the active edge sites through controlling surface structure at the atomic scale. Here we firstly demonstrate a facile strategy to synthesize large-area and edge-rich platinum diselenide (PtSe 2 ) via selenization of Pt films by magnetron sputtering physical deposition method. The edge site density of the PtSe 2 can be effectively controlled by tuning the thickness of Pt films. The HER activity of the PtSe 2 can be enhanced significantly as the active edge site density increases. The maximum cathodic current density of 227 mA/cm 2 can be obtained through increasing the edge density, which well agrees with the density functional theory calculations. Our work provides a fundamental insight on the effect of active edge site density towards HER.

WS2 layered material offers a great potential for the development of next generation laser photonic devices due to its strong layer absorption compared with graphene. The passively Q-switched Nd:YVO4 laser operating at 1064 nm was first demonstrated by using layered tungsten disulfide WS2 saturable absorber SA, which was fabricated by using radio frequency magnetron sputtering method. The fabrication method is scalable and capable of producing large size sample with high uniformity. Besides, the thickness of produced sample can be well-controlled by adjusting sputtering time. A stable Q-switched laser operation is achieved by using this home made few layers WS2-SA within a diode-pumped Nd:YVO4 laser cavity. The maximum average output power obtained is 19.6 mW corresponding to a repetition rate of 135 kHz, a pulse duration of 2.3 μs and single pulse energy of 145 nJ. This result proves the promising Q-switching performance of the fabricated WS2-SA.

Group‐10 transition metal dichalcogenides (TMDs) with distinct optical and tunable electrical properties have exhibited great potential for various optoelectronic applications. Herein, a self‐powered photodetector is developed with broadband response ranging from deep ultraviolet to near‐infrared by combining FA1−xCsxPbI3 perovskite with PdSe2 layer, a newly discovered TMDs material. Optoelectronic characterization reveals that the as‐assembled PdSe2/perovskite Schottky junction is sensitive to light illumination ranging from 200 to 1550 nm, with the highest sensitivity centered at ≈800 nm. The device also shows a large on/off ratio of ≈104, a high responsivity (R) of 313 mA W−1, a decent specific detectivity (D*) of ≈1013 Jones, and a rapid response speed of 3.5/4 µs. These figures of merit are comparable with or much better than most of the previously reported perovskite detectors. In addition, the PdSe2/perovskite device exhibits obvious sensitivity to polarized light, with a polarization sensitivity of 6.04. Finally, the PdSe2/perovskite detector can readily record five “P,” “O,” “L,” “Y,” and “U” images sequentially produced by 808 nm. These results suggest that the present PdSe2/perovskite Schottky junction photodetectors may be useful for assembly of optoelectronic system applications in near future.