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A new approach is proposed in this work to chemically control the low-temperature sol–gel formation of ZnO thin films used as efficient electron transporting layers (ETLs) in inverted polymer solar cells (PSCs). The chemical composition of the ZnO sol–gel precursor was modified by systematically employing different [H2O]/[Zn2+] molar ratios in the starting sol formulation and evaluating their influence on film properties and PSC device performance. A thorough characterization of the obtained ZnO ETLs evidenced the key importance of the [H2O]/[Zn2+] molar ratio to achieve effective control on the sol–gel hydrolysis and condensation processes. Based on these evidences, a mechanism for the formation of the ZnO films at the low processing temperatures used in this work was proposed. PSC devices were fabricated incorporating ZnO ETLs obtained from ZnO sol precursor formulations with increasing [H2O]/[Zn2+] ratios and their photovoltaic characterization revealed the presence of a maximum device efficiency for intermediate [H2O]/[Zn2+] values. Finally, the effect of water in the ZnO sol precursor on the long-term (>1000 h) shelf-life of PSCs fabricated onto flexible PET substrates was investigated and a correlation was found between chemical composition of the ZnO sol precursor and device shelf-life. The results of this study give a clear demonstration of a viable strategy to achieve improved PSC device performance by chemically controlling the formation of the sol–gel based ZnO ETL at processing temperatures compatible with flexible plastic substrates and provide useful guidelines for the development of efficient sol–gel derived metal-oxide buffer layers for highly performing flexible photovoltaics.

We demonstrated self-aligned amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) where the source–drain (S/D) regions were made conductive via chemical reduction of the a-IGZO via metallic calcium (Ca). Due to the higher chemical reactivity of Ca, the process can be operated at lower temperatures. The Ca process has the additional benefit of the reaction byproduct calcium oxide being removable through a water rinse step, thus simplifying the device integration. The Ca-reduced a-IGZO showed a sheet resistance (RSHEET) value of 0.7 kΩ/sq., with molybdenum as the S/D metal. The corresponding a-IGZO TFTs exhibited good electrical properties, such as a field-effect mobility (μFE) of 12.0 cm2/(V s), a subthreshold slope (SS−1) of 0.4 V/decade, and an on/off current ratio (ION/OFF) above 108. Cop. 2015 The Korean Information Display Society.

We demonstrated self-aligned amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) where the source–drain (S/D) regions were made conductive via chemical reduction of the a-IGZO via metallic calcium (Ca). Due to the higher chemical reactivity of Ca, the process can be operated at lower temperatures. The Ca process has the additional benefit of the reaction byproduct calcium oxide being removable through a water rinse step, thus simplifying the device integration. The Ca-reduced a-IGZO showed a sheet resistance (RSHEET) value of 0.7 kΩ/sq., with molybdenum as the S/D metal. The corresponding a-IGZO TFTs exhibited good electrical properties, such as a field-effect mobility (μFE) of 12.0 cm2/(V s), a subthreshold slope (SS−1) of 0.4 V/decade, and an on/off current ratio (ION/OFF) above 108. Cop. 2015 The Korean Information Display Society.

The processes involved in the solution combustion synthesis of α-Al2O3 using urea as an organic fuel were investigated. The data describing the influence of the relative urea content on the characteristic features of the combustion process, the crystalline structure and the morphology of the aluminium oxide are presented herein. Our data demonstrate that the combustion of stable aluminium nitrate and urea complexes leads to the formation of α-alumina at temperatures of approximately 600-800 °C. Our results, obtained using differential thermal analysis and IR spectroscopy methods, reveal that the low-temperature formation of α-alumina is associated with the thermal decomposition of an α-AlO(OH) intermediate, which was crystallised in the crystal structure of the diaspore. © 2012 Elsevier Ltd and Techna Group S.r.l.

A precursor-based approach to the cubic beta-phase of PbF(2) was developed and allowed the preparation of this high-temperature phase well below the temperature for transition from the orthorhombic alpha- to the cubic beta-phase. The formation of beta-PbF(2) from the molecular precursors Pb[Se(C(6)H(2)(CF(3))(3))](2) and Pb(C(6)H(2)(CF(3))(3))(2) is facilitated by the presence of several short Pb center dot center dot center dot F contacts in these molecules. The cubic form of PbF(2) was obtained as macroscopic crystals as well as nanoparticulate powder. Its formation at relatively low temperature suggested a theoretical re-investigation of the phase stabilities of the two polymorphs. The theoretical results from the Kohn-Sham density functional theory indicate that the energy content for the beta-phase is slightly lower than the one for the alpha-phase, by 0.5-1.7 kJ mol(-1) depending on the density functional used (zero-point vibrational energy correction included).