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A method is designed to improve the luminescence of AlN-based phosphors by tuning the band structure and crystal structure due to alloying with GaN. The pure (Al,Ga)N:Eu phosphors were initially prepared by gas-phase reaction in an NH3 atmosphere. GaN alloying was used to expand the crystal lattice of AlN due to Ga3+ substituting for smaller Al3+ ions, making dissolution of Eu2+ easier. The dissolution of Ga in the AlN lattice was proven by the result of the Rietveld refinement and the increase in lattice parameters with increasing Ga content. To introduce other energy states mixing with the 5d states of Eu2+, Ga doping was also used to tune the band structure of AlN by acting on Eu2+ ions. The theoretical result was analyzed using the Cambridge Sequential Total Energy Package (CASTEP). According to the calculated total and atom resolved partial density of states, it was observed that the Ga 5p states contribute a large portion to the corresponding Eu2+ absorption band in (Al,Ga)N:Eu phosphors. As a consequence, an enhanced emission intensity at 470 nm and a high quantum efficiency for excitation at 330 nm was obtained despite of stronger thermal quenching of the (Al,Ga)N:Eu phosphors compared with AlN:Eu.

A novel Al 10 O 3 N 8 :Eu 2+ phosphor was prepared successfully by a mechanochemical activation route. With the help of high-energy ball milling, the starting materials were mostly transformed into an amorphous phase, which significantly promotes the synthesis of Al 10 O 3 N 8 phase at a relatively moderate reaction condition. Al 10 O 3 N 8 :Eu 2+ phosphor showed a broad blue emission band under ultraviolet-light excitation and small thermal quenching. Additionally, it was found that Al 10 O 3 N 8 :Eu 2+ phosphor showed a strong blue emission under 147 nm excitation and shorter decay time compared with BAM:Eu 2+ phosphor, making it a potential phosphor used in plasma display panels. Si–N doping was performed to further increase the luminescence intensity of Al 10 O 3 N 8 :Eu 2+ phosphor and the related mechanism was discussed. Prospectively, it was feasible to apply the synthesis approach to other hardly achieved materials.

The facile preparation of ZnO possessing high visible luminescence intensity remains challenging due to an unclear luminescence mechanism. Here, two basic approaches are proposed to enhance the luminescent intensity based on the theoretical analysis over surface defects. Based on the deduction, we introduce a methodology for obtaining hybrid tetrapod-like zinc oxide (T-ZnO), decorated by carbon nanomarterials on T-ZnO surfaces through the catalytic chemical vapor deposition approach. The intensity of the T-ZnO green emission can be modulated by topography and the proportion of carbon. Under proper experiment conditions, the carbon decorating leads to dramatically enhanced luminescence intensity of T-ZnO from 400 to 700 nm compared with no carbon decorated, which elevates this approach to a simple and effective method for the betterment of fluorescent materials in practical applications.