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A midinfrared quantum cascade laser with high wall-plug efficiency is analyzed by means of an ensemble Monte Carlo method. Both the carrier transport and the cavity field dynamics are included in the simulation, offering a self-consistent approach for analyzing and optimizing the laser operation. It is shown that at low temperatures, photon emission and absorption can govern the carrier transport in such devices. Furthermore, we find that photon-induced scattering can strongly affect the kinetic electron distributions within the subbands. Our results are validated against available experimental data.

We present equivalent circuits that model the interaction of microwave resonators and quantum systems. The circuit models are derived from a general interaction Hamiltonian. Quantitative agreement between the simulated resonator transmission frequency, qubit Lamb shift and experimental data will be shown. We demonstrate that simple circuit models, using only linear passive elements, can be very useful in understanding systems where a small quantum system is coupled to a classical microwave apparatus.

Resonant phonon depopulation terahertz quantum cascade lasers based on vertical and diagonal lasing transitions are systematically compared using a well established ensemble Monte Carlo approach. The analysis shows that for operating temperatures below 200 K, diagonal designs may offer superior temperature performance at lasing frequencies of about 3.5 THz and above; however, vertical structures are more advantageous for good temperature performance at lower frequencies.

Employing an ensemble Monte Carlo transport simulation, we self-consistently analyze the spectral gain for different THz quantum cascade laser structures, considering bound-to-continuum as well as resonant phonon depopulation designs. In this context, we investigate temperature dependent gain broadening, affecting the temperature performance of THz structures. Furthermore, we discuss the influence of the individual scattering mechanisms, such as electron-electron, impurity and interface roughness scattering. A comparison of the simulation results to experimental data yields good agreement.

Based on an ensemble Monte Carlo analysis, we show that Coulomb interactions play a dominant role in bound-to-continuum terahertz quantum cascade lasers and thus require careful modeling. Coulomb interactions enter our simulation in the form of space charge effects as well as Coulomb scattering events. By comparison to a full many-subband Coulomb screening model, we show that simplified approaches produce considerable deviations for such structures. Also the spin dependence of electron-electron scattering has to be adequately considered. Moreover, we demonstrate that iterative Schr\"{o}dinger-Poisson and carrier transport simulations are necessary to correctly account for space charge effects.

We present a comparative analysis of a set of GaAs-based THz quantum cascade lasers, based on longitudinal-optical phonon scattering depopulation, by using an ensemble Monte Carlo simulation, including both carrier-carrier and carrier-phonon scattering. The simulation shows that the parasitic injection into the states below the upper laser level limits the injection efficiency and thus the device performance at the lasing threshold. Additional detrimental effects playing an important role are identified. The simulation results are in reasonable agreement with the experimental findings., Comment: 3 pages, 3 figures

Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline-Si substrates. For SiO2 substrates an Ar plasma treatment was used to homogenize the catalyst coalescence, and thus the NWs diameter. Furthermore, planar field effect transistors (FETs) were fabricated by implementing 10 to 30 nm thin nominally undoped Si-NWs as the active region. Various silicides were investigated as Schottky-barrier source and drain contacts for the active region. For CoSi, NiSi and PdSi contacts, the FETs transfer characteristics showed p-type behavior. A FET consisting of a single Si-NW with 20 nanometers diameter and 2.5 micrometer gate-length delivers as much as 0.15 microA on-current at 1 volt bias voltage and has an on/off current ratio of 10^7. This is in contrast to recent reports of low conductance in undoped Si., Comment: accepted for publication in phys. stat. sol. (c)(C) (2006) WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

A theoretical investigation of quantum-transport phenomena in mesoscopic systems is presented. In particular, a generalization to ``open systems'' of the well-known semiconductor Bloch equations is proposed. The presence of spatial boundary conditions manifest itself through self-energy corrections and additional source terms in the kinetic equations, whose form is suitable for a solution via a generalized Monte Carlo simulation. The proposed approach is applied to the study of quantum-transport phenomena in double-barrier structures as well as in superlattices, showing a strong interplay between phase coherence and relaxation., Comment: to appear in Phys. Rev. Lett