1. Flexoelectricity in amorphous hafnium oxide (HfO2)
- Author
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Daniel Moreno-Garcia, Kaitlin M. Howell, and Luis Guillermo Villanueva
- Subjects
Biotechnology ,TP248.13-248.65 ,Physics ,QC1-999 - Abstract
Flexoelectricity, inherent in all materials, offers a promising alternative to piezoelectricity for nanoscale actuation and sensing. However, its widespread application faces significant challenges: differentiating flexoelectric effects from those of piezoelectricity and other phenomena, verifying its universality across all material structures and thicknesses, and establishing a comprehensive database of flexoelectric coefficients across different materials. This work introduces a groundbreaking methodology that accurately isolates flexoelectricity from piezoelectric, electrostrictive, and electrostatic effects, with a detection threshold extending below 1 fC/m. The robustness of this method is demonstrated through its application to amorphous hafnium oxide, successfully measuring a flexoelectric coefficient of 105 ± 10 pC/m. This measurement signifies the first measurement of flexoelectricity in hafnia, as well as in any amorphous material. In addition, the study compiles a list of published flexoelectric coefficients, revealing an important insight. The relationship between the flexoelectric coefficient and the material’s relative permittivity is better approximated by a quadratic proportionality. This challenges the traditional linear assumption proposed in Kogan’s work and opens new avenues for future research in flexoelectric materials.
- Published
- 2024
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