38 results on '"Luna, Lunet E."'
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2. Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation
3. Polarity dependent implanted p-type dopant activation in GaN
4. Vertical power devices enabled by bulk GaN substrates
5. Lateral GaN JFET Devices on Large Area Engineered Substrates
6. Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation.
7. Lateral GaN JFET Devices on 200 mm Engineered Substrates for Power Switching Applications
8. (Invited) Understanding Interfaces in Homoepitaxial GaN Growth
9. Vertical and Lateral GaN Power Devices Enabled by Engineered GaN Substrates
10. SiC Wafer Bonding and Deep Reactive Ion Etching Towards High-Aspect Ratio SiC MEMS Fabrication
11. Processing of Cavities in SiC Material for Quantum Technologies
12. Atomic-Scale Electronic Characterization of Defects in Silicon Carbide Nanowires by Electron Energy-Loss Spectroscopy
13. (Invited) Fabrication and Characterization of β-Ga2O3Heterojunction Rectifiers
14. Vertical Power Devices Enabled by Bulk GaN Substrates.
15. Mechanical Exfoliation of Large Area (100) β-Ga2O3 Onto Arbitrary Substrates for High Power Devices
16. Deep reactive ion etching of 4H-SiC via cyclic SF6/O2 segments
17. Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
18. 3D MoS 2 Aerogel for Ultrasensitive NO 2 Detection and Its Tunable Sensing Behavior
19. Dry Etching of High Aspect Ratio 4H-SiC Microstructures
20. Ga2O3 Schottky barrier and heterojunction diodes for power electronics applications.
21. Demonstration of Hexagonal Phase Silicon Carbide Nanowire Arrays with Vertical Alignment
22. High-Temperature All Solid-State Microsupercapacitors based on SiC Nanowire Electrode and YSZ Electrolyte
23. Ni-induced graphitization for enhanced long-term stability of ohmic contact to polycrystalline 3C-SiC
24. 3D MoS2 Aerogel for Ultrasensitive NO2 Detection and Its Tunable Sensing Behavior.
25. Templated 3D Ultrathin CVD Graphite Networks with Controllable Geometry: Synthesis and Application As Supercapacitor Electrodes
26. (Invited) Understanding Interfaces in Homoepitaxial GaN Growth
27. (Invited) Fabrication and Characterization of ?-Ga2O3 Heterojunction Rectifiers
28. The Interaction between Eukaryotic Initiation Factor 1A and eIF5 Retains eIF1 within Scanning Preinitiation Complexes
29. Templated Nanopores for Robust Functional Surface Porosity in Poly(methyl methacrylate)
30. The C-Terminal Domain of Eukaryotic Initiation Factor 5 Promotes Start Codon Recognition by Its Dynamic Interplay with eIF1 and eIF2β
31. Hollow Silica Nanoparticles in UV−Visible Antireflection Coatings for Poly(methyl methacrylate) Substrates
32. Ni-induced graphitization for enhanced long-term stability of ohmic contact to polycrystalline 3C-SiC.
33. Templated Nanopores forRobust Functional SurfacePorosity in Poly(methyl methacrylate).
34. Vertical power devices enabled by bulk GaN substrates
35. (Invited)Understanding Interfaces in Homoepitaxial GaN Growth
36. Ga2O3Schottky barrier and heterojunction diodes for power electronics applications
37. The C-Terminal Domain of Eukaryotic Initiation Factor 5 Promotes Start Codon Recognition by Its Dynamic Interplay with eIF1 and eIF2β
38. Hollow silica nanoparticles in UV-visible antireflection coatings for poly(methyl methacrylate) substrates.
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