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19 results on '"Luo, Jun-Dao"'

3. Ferroelectric Undoped HfO xCapacitor With Symmetric Synaptic for Neural Network Accelerator

Author

Luo, Jun-Dao, primary, Lai, Yu-Ying, additional, Hsiang, Kuo-Yu, additional, Wu, Chia-Feng, additional, Yeh, Yun-Tien, additional, Chung, Hao-Tung, additional, Li, Yi-Shao, additional, Chuang, Kai-Chi, additional, Li, Wei-Shuo, additional, Liao, Chun-Yu, additional, Chen, Pin-Guang, additional, Chen, Kuan-Neng, additional, Lee, Min-Hung, additional, and Cheng, Huang-Chung, additional

Published
2021
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4. Effect of Crystallinity on the Electrical Characteristics of Poly-Si Tunneling FETs via Green Nanosecond Laser Crystallization

Author

Chung, Hao-Tung, primary, Chen, Chun-Ting, additional, Li, Yi-Shao, additional, Liu, Yu-Wei, additional, Liao, Chan-Yu, additional, Huang, Wen-Hsien, additional, Shieh, Jia-Min, additional, Luo, Jun-Dao, additional, Li, Wei-Shuo, additional, Chuang, Kai-Chi, additional, Chen, Kuan-Neng, additional, and Cheng, Huang-Chung, additional

Published
2021
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5. Improvement of ferroelectric properties in undoped hafnium oxide thin films using thermal atomic layer deposition

Author

Luo, Jun-Dao, primary, Zhang, He-Xin, additional, Wang, Zheng-Ying, additional, Gu, Siang-Sheng, additional, Yeh, Yun-Tien, additional, Chung, Hao-Tung, additional, Chuang, Kai-Chi, additional, Liao, Chan-Yu, additional, Li, Wei-Shuo, additional, Li, Yi-Shao, additional, Li, Kai-Shin, additional, Lee, Min-Hung, additional, and Cheng, Huang-Chung, additional

Published
2019
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8. Atomic Layer Deposition Plasma-Based Undoped-HfO 2 Ferroelectric FETs for Non-Volatile Memory.

Author

Luo, Jun-Dao, Lai, Yu-Ying, Hsiang, Kuo-Yu, Wu, Chia-Feng, Chung, Hao-Tung, Li, Wei-Shuo, Liao, Chun-Yu, Chen, Pin-Guang, Chen, Kuan-Neng, Lee, Min-Hung, and Cheng, Huang-Chung

Subjects
ATOMIC layer deposition, FERROELECTRIC thin films, RECORDS management, MEMORY
Abstract

A plasma-based undoped-HfO2 FeFET (ferroelectric FET) with non-volatile memory characteristics is demonstrated. Modifying the O2 plasma period in plasma-enhanced atomic layer deposition (PE-ALD) is an effective approach to enhance the remnant polarization ($\text{P}_{\text {r}}$) up to 2P $_{\text {r}} = 25\,\,\mu \text{C}$ /cm2 for the MFM (metal/ferroelectric/metal) structure with ferroelectric undoped-HfO2 thin films, and successful integration is implemented for the FeFET. The appropriate O2 vacancies ($\text{V}_{\text {o}}^{{2}+}$) benefit the formation of the ferroelectric phase since they play the role of dopants and help orthorhombic phase (o-phase) formation during post-metal annealing (PMA). The $\text{V}_{\text {o}}^{{2}+}$ -rich undoped-HfO2 FeFET exhibits a memory window (MW) of 0.5 V, ${5} \times {10}^{{4}}$ switching endurance cycles, and higher than $10^{{4}}$ sec of data retention with $\text{V}_{\text {P/E}} = \pm 5$ V. [ABSTRACT FROM AUTHOR]

Published
2021
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11. Ferroelectric Undoped HfOx Capacitor With Symmetric Synaptic for Neural Network Accelerator.

Author

Luo, Jun-Dao, Lai, Yu-Ying, Hsiang, Kuo-Yu, Wu, Chia-Feng, Yeh, Yun-Tien, Chung, Hao-Tung, Li, Yi-Shao, Chuang, Kai-Chi, Li, Wei-Shuo, Liao, Chun-Yu, Chen, Pin-Guang, Chen, Kuan-Neng, Lee, Min-Hung, and Cheng, Huang-Chung

Subjects
*ATOMIC layer deposition, *CAPACITORS, *GRAZING incidence, *FERROELECTRIC transitions, *X-ray diffraction
Abstract

A plasma-based ferroelectric undoped HfOx capacitor is fabricated using plasma-enhanced atomic layer deposition (PE-ALD), and the multilevel characteristics of synaptic behavior are investigated. A gradual ferroelectric phase transition in the material is confirmed by grazing incidence X-ray diffraction (GI-XRD) for different O2 plasma periods. The metal–ferroelectric–metal (MFM) capacitor presents excellent remnant polarization (Pr) up to 13 μC/cm2 and a switching endurance of more than 108 cycles. Superior small potentiation/depression nonlinearity (αp/αd = −0.08/−1.66 for voltage modulation stimulation) for synaptic training and almost symmetry training curve (|αp−αd|) are obtained. High stability under multilevel operation with five consecutive cycles of alternating potentiation and depression is exhibited without significant polarization variation for each training step (pulse). [ABSTRACT FROM AUTHOR]

Published
2021
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19. Electrochemical Properties of CNT/MnO2Hybrid Nanostructure with Low-Temperature Hydrothermal Synthesis as High-Performance Supercapacitor

Author

Li, Wei-Shuo, Chang, Man-Lin, Chuang, Kai-Chi, Li, Yi-Shao, Luo, Jun-Dao, and Cheng, Huang-Chung

Abstract

Multi-walled carbon nanotubes (CNTs)/manganese dioxide (MnO2) nanocomposites were fabricated using the low-temperature hydrothermal method with no oxidant addition as hybrid supercapacitors. The electrochemical behaviors of CNTs-MnO2 were systematically investigated by cyclic voltammetry, galvanostatic charge-discharge and electrochemical impedance spectroscopy. The specific capacitance was promoted from 30.3 F g−1to 405.15 F g−1with a hydrothermal reaction time of 5 min. Compared to pristine CNTs, the improvement ratio of the specific capacitance of a hydrothermal reaction time of 5 min was 13.4 times under the condition of a 1 M Na2SO4electrolyte at a scan rate of 100 mVs−1. The CNTs-MnO2electrode also demonstrated better cycling stability after 1000 cycles. Moreover, this study demonstrates that CNTs-MnO2electrodes have a low-temperature facile synthesis, high specific capacitance, and good cycle stability. Thus, these good supercapacitors electrodes are promising for the development in energy-storage devices in the future.

Published
2019
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