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Integrators are widely used in industrial controls, signal processing, and computing. However, traditional resistor–capacitor integrators incur leakage errors and zero drift, hindering their accuracy. By contrast, spintronic devices with good scalability and endurance for memory and logic applications in digital circuits have yet to be studied for analog circuit elements. Here, we propose a single-device spintronic integrator based on the current-controlled magnetic domain wall (DW). Continuous DW motion and correlated changes in the anomalous Hall resistance (or magneto-resistance) are encoded as an analog output signal, which is modulated by an input current through the spin–orbit-torque effect. Waveform transformation and phase-shift functions are demonstrated using Hall-bar devices. The spintronic integrator could pave the way for the spin-based analog computing with high reliability, high endurance, and good compatibility with the CMOS process. [ABSTRACT FROM AUTHOR]

We experimentally investigate spin–orbit torque (SOT) switching of a hybrid exchange spring system (ESS) in which a Co/Pt with perpendicular magnetic anisotropy (PMA) is coupled to a CoFeB thin film with an in-plane (IP) magnetic anisotropy (IMA). The magnetization tilt angle from the out-of-plane can be easily tuned by varying the thickness of the IMA layer due to the competition between PMA and IMA layers. We find that the tilt angle is highly tuned from 0° to 90° over a small range of CoFeB thicknesses, from 0 to 1 nm. The tilted films with high thermal stability are promising materials for a zero/low field operating SOT magnetic random access memory (MRAM) or for a bit patterned magnetic recording media. IP current-induced magnetization switching of Co/Pt-CoFeB ESS is also studied, under an IP magnetic field ($H_{\mathrm {IP}}$). The current amplitude for the 45° tilt magnetization switching is almost independent of the $H_{\mathrm {IP}}$ ranged from 50 to 1000 Oe. This phenomenon might be due to the presence of the Dzyaloshinskii–Moriya interaction (DMI) and DMI effective field is expected to be less than 50 Oe. [ABSTRACT FROM AUTHOR]

Multi-junctional magnetic tunneling junction spin dice based on orthogonal spin-transfer devices, a new type of true random number (RN) generator (TRNG) is demonstrated in this paper. Orthogonal spin-transfer devices use a planar polarizer to push the free layer with perpendicular anisotropy to metastable state (high-energy state) when power is on. The stochastic precessional switching behavior in ferromagnetic free layer is utilized as the entropy source of the TRNG. Once the power is turned off, anisotropy field and demagnetization field relax the magnetization of free layer from metastable state to one of the two stable states, producing a random bit whose value is solely determined by the stochastic switching behavior. The generation and detection of random bits were summarized under the macrospin picture. RN sequences with high randomness can be produced steadily in the proposed TRNG with a wide operation range of temperature and applied current density. Furthermore, the RN sequences pass the statistical test of NIST SP-800 with an appropriate pass rate without any need of post-procession of data. Ease of design, ultrafast switching as well as high randomness of the bit sequences make the proposed TRNG a competitive device in information security field. [ABSTRACT FROM AUTHOR]

• Skyrmion motions are manipulated by SOT, VCMA and gradient anisotropy. • Sequential logic elements are designed and implemented based on skyrmion dynamics. • These skyrmion elements can be used for spin-based sequential logic circuits. Skyrmion sequential elements are proposed and demonstrated. A skyrmion latch is implemented in a single device where skyrmion motion is controlled by spin-orbit torque and voltage-controlled magnetic anisotropy in a magnetic nanotrack with gradient anisotropy. Micromagnetic simulations have been carried out to verify the feasibility of the latch function and to study device performance. The results indicate that the proposed skyrmion latch have potential advantages, including a small device footprint, a tunable switching speed, and low power consumption. Furthermore, a master-slave skyrmion flip-flop can be simply implemented by cascading two skyrmion latches to be further used for constructing a skyrmion register. This work provides a guideline to design spintronics for sequential logic circuits. [ABSTRACT FROM AUTHOR]

In the quest for novel, scalable and energy-efficient computing technologies, spin-based logic devices are being extensively explored due to their potential for nonvolatility, small cell area, and low operational power. Spin torque majority gate (STMG) is one of the most promising options for beyond CMOS nonvolatile logic circuits for normally-off computing. However, significant problems arose with cascade-ability, signal nonreciprocity, and complicated circuit configurations based on STMG. In this paper, a novel magnetic majority gate (MMG) logic has been proposed, utilizing both spin transfer torque and spin–orbit torque effects. A logic family including and/nand and or/nor functions can be achieved with an easy configuration and under a stable operation. Communication between logic units is realized by spin current injection through a nonferromagnetic metal wire to ensure its cascade-ability and nonreciprocity to design multiple logic-depth circuits. With all of these advantages, the proposed cascadable MMGs can be utilized to design logic functions such as the BUFFER/ NOT, XOR/ XNOR, and complicated logic gates, which pave the pathway for designing robust and comprehensive logic circuits using full spintronic devices. [ABSTRACT FROM AUTHOR]