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openaire: EC/H2020/834742/EU//ATOP High-harmonic generation (HHG), an extreme nonlinear optical phenomenon beyond the perturbation regime, is of great significance for various potential applications, such as high-energy ultrashort pulse generation with outstanding spatiotemporal coherence. However, efficient active control of HHG is still challenging due to the weak light–matter interaction displayed by currently known materials. Here, we demonstrate optically controlled HHG in monolayer semiconductors via the engineering of interband polarization. We find that HHG can be efficiently controlled in the excitonic spectral region with modulation depths up to 95% and ultrafast response speeds of several picoseconds. Quantitative time-domain theory of the nonlinear optical susceptibilities in monolayer semiconductors further corroborates these experimental observations. Our demonstration not only offers an in-depth understanding of HHG but also provides an effective approach toward active optical devices for strong-field physics and extreme nonlinear optics.

The graphene-based moiré superlattice has been demonstrated as an exciting system for investigating strong correlation phenomenon[1-15]. However, the fabrication of such moiré superlattice mainly relies on transfer technology. Here, we report the epitaxial growth of trilayer graphene (TLG) moiré superlattice on hexagonal boron nitride (hBN) by a remote plasma enhanced chemical vapor deposition method. The as grown TLG/hBN shows a uniform moiré pattern with a period of ~15nm by atomic force microscopy (AFM) imaging, which agrees with the lattice mismatch between graphene and hBN[16, 17]. By fabricating the device with both top and bottom gates, we observe a gate-tunable bandgap at charge neutral point (CNP) and displacement field tunable satellite resistance peaks at half and full fillings. The resistance peak at half-filling indicates a strong electron-electron correlation in our grown TLG/hBN superlattice. In addition, we observe quantum Hall states at Landau level filling factors ν = 6, 10, 14…, indicating that our grown trilayer graphene has the ABC stacking order. Our work suggests that epitaxy provides an easy way to fabricate stable and reproducible two-dimensional strongly correlated electronic materials.

openaire: EC/H2020/834742/EU//ATOP | openaire: EC/H2020/965124/EU//FEMTOCHIP Moiré superlattices, the artificial quantum materials, have provided a wide range of possibilities for the exploration of completely new physics and device architectures. In this Review, we focus on the recent progress on emerging moiré photonics and optoelectronics, including but not limited to moiré excitons, trions, and polaritons; resonantly hybridized excitons; reconstructed collective excitations; strong mid- and far-infrared photoresponses; terahertz single-photon detection; and symmetry-breaking optoelectronics. We also discuss the future opportunities and research directions in this field, such as developing advanced techniques to probe the emergent photonics and optoelectronics in an individual moiré supercell; exploring new ferroelectric, magnetic, and multiferroic moiré systems; and using external degrees of freedom to engineer moiré properties for exciting physics and potential technological innovations.

The van der Waals (vdW) strategy is promising for overcoming the Fermi pinning challenge in two-dimensional (2D) transistors. However, the lack of advanced-node lithography-compatible methods hinders wafer-scale integrated manufacturing of vdW contacts. We report a yttrium-doping-induced phase-transition technology for converting semiconducting trigonal prismatic (2H) into heavily doped metallic octahedral (1T) MoS2 to achieve suitable vdW band alignment and ideal ohmic contacts. This Y-doped 1T-MoS2 is a vdW metallic buffer, and it improves carrier transfer efficiency from the metal electrode to 2H MoS2. We developed a solid-state-source three-step doping method (plasma-deposition-annealing) and achieved Å-thickness surface doping with yttrium atoms replacing sulfur atoms in the top surface of MoS2, thus forming self-aligned Y-doped 1T-MoS2 vdW ohmic contacts lithographically patterned in the source and drain regions. We fabricated 10-nm MoS2 FETs with Y-doped 1T-MoS2 vdW contacts in 2-inch wafers exhibiting nearly ideal ohmic contact with an ignorable Schottky barrier, achieved the smallest contact-resistance Rc in all 2D TMD FETs (less than 117-ohm micrometers) and a total-resistance (235-ohm micrometers) more than three times smaller than those of the best-reported 2D n-type FETs (greater than 800-ohm micrometers), showing high performance with an excellent on-current density of 1.22 milliamperes per micrometer at a small drain voltage of 0.7 V, a high ballistic ratio of 80%, and a record transconductance of 3.2 millisiemens per micrometer.

Artificial retina implantation provides an effective and feasible attempt for vision recovery in addition to retinal transplantation. The most advanced artificial retinas ever developed based on silicon technology are rigid and thus less compatible with the biosystem. Here we demonstrate flexible photoresponsive ring oscillators (PROs) based on the 2D semiconductor MoS

The ever-growing demand for faster and more efficient data transfer and processing has brought optical computation strategies to the forefront of research in next-generation computing. Here, we report a universal computing approach with the chirality degree of freedom. By exploiting the crystal symmetry-enabled well-known chiral selection rules, we demonstrate the viability of the concept in bulk silica crystals and atomically thin semiconductors and create ultrafast (100-fs) all-optical chirality logic gates (XNOR, NOR, AND, XOR, OR, and NAND) and a half adder. We also validate the unique advantages of chirality gates by realizing multiple gates with simultaneous operation in a single device and electrical control. Our first demonstrations of logic gates using chiral selection rules suggest that optical chirality could provide a powerful degree of freedom for future optical computing.

Funding Information: We are grateful to B. J. Irving for carefully reading the manuscript. G.Z. thanks the National Science Foundation of China (NSFC, grant nos 11834017 and 61888102) and the Strategic Priority Research Program of CAS (grant no. XDB30000000) for their support. M.L. thanks the ESI Fund and the OPR DE International Mobility of Researchers MSCA-IF III at CTU in Prague (no. CZ.02.2.69/0.0/0.0/20_079/0017983) for their support. L.D. gratefully acknowledges the financial support from the Academy of Finland (grant no. 3333099). D.S. thanks the support from NSFC (grant no. 61734001). K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan, A3 Foresight by JSPS and the CREST (JPMJCR15F3), JST. M.L., P.N. and T.P. acknowledge support from the project Novel Nanostructures for Engineering Applications CZ.02.1.01/0.0/0.0/16_026/0008396. This work was supported by the Ministry of Education, Youth and Sports of the Czech Republic through the e-INFRA CZ (ID:90140). T.P., V.E.P.C. and A.S. acknowledge support from the European Union’s Horizon 2020 research and innovation program under grant agreement no. 721642: SOLUTION. The data and materials are available from the corresponding authors upon request. The authors acknowledge the use of the IRIDIS High Performance Computing Facility, and associated support services at the University of Southampton, in the completion of this work. Publisher Copyright: © 2021, The Author(s), under exclusive licence to Springer Nature Limited. MoS2/graphite and MoS2/h-BN interfaces are shown to have ultra-low friction coefficients, whereas edges and interface steps mainly contribute to the friction force. Two-dimensional heterostructures are excellent platforms to realize twist-angle-independent ultra-low friction due to their weak interlayer van der Waals interactions and natural lattice mismatch. However, for finite-size interfaces, the effect of domain edges on the friction process remains unclear. Here we report the superlubricity phenomenon and the edge-pinning effect at MoS2/graphite and MoS2/hexagonal boron nitride van der Waals heterostructure interfaces. We found that the friction coefficients of these heterostructures are below 10(-6). Molecular dynamics simulations corroborate the experiments, which highlights the contribution of edges and interface steps to friction forces. Our experiments and simulations provide more information on the sliding mechanism of finite low-dimensional structures, which is vital to understand the friction process of laminar solid lubricants.

openaire: EC/H2020/881603/EU//GrapheneCore3 | openaire: EC/H2020/820423/EU//S2QUIP | openaire: EC/H2020/834742/EU//ATOP | openaire: EC/H2020/965124/EU//FEMTOCHIP Mixed-dimensional heterostructures combine the merits of materials of different dimensions; therefore, they represent an advantageous scenario for numerous technological advances. Such an approach can be exploited to tune the physical properties of two-dimensional (2D) layered materials to create unprecedented possibilities for anisotropic and high-performance photonic and optoelectronic devices. Here, we report a new strategy to engineer the light-matter interaction and symmetry of monolayer MoS2 by integrating it with one-dimensional (1D) AlGaAs nanowire (NW). Our results show that the photoluminescence (PL) intensity of MoS2 increases strongly in the mixed-dimensional structure because of electromagnetic field confinement in the 1D high refractive index semiconducting NW. Interestingly, the 1D NW breaks the 3-fold rotational symmetry of MoS2, which leads to a strong optical anisotropy of up to ∼60%. Our mixed-dimensional heterostructure-based phototransistors benefit from this and exhibit an improved optoelectronic device performance with marked anisotropic photoresponse behavior. Compared with bare MoS2 devices, our MoS2/NW devices show ∼5 times enhanced detectivity and ∼3 times higher photoresponsivity. Our results of engineering light-matter interaction and symmetry breaking provide a simple route to induce enhanced and anisotropic functionalities in 2D materials.

openaire: EC/H2020/820423/EU//S2QUIP | openaire: EC/H2020/834742/EU//ATOP Van der Waals heterostructures are the fundamental building blocks of electronic and optoelectronic devices. Here we report that, through a single-step chemical vapour deposition (CVD) process, high-quality vertical bilayer MoS2/WS2 heterostructures with a grain size up to ∼60 μm can be synthesized from molten salt precursors, Na2MoO4 and Na2WO4. Instead of normal pyramid vertical heterostructures grown by CVD, this method synthesizes an anti-pyramid MoS2/WS2 structure, which is characterized by Raman, photoluminescence and second harmonic generation microscopy. Our facile CVD strategy for synthesizing anti-pyramid structures unveils a new synthesis route for the products of two-dimensional heterostructures and their devices for application.

openaire: EC/H2020/820423/EU//S2QUIP | openaire: EC/H2020/834742/EU//ATOP A lateral junction with an atomically sharp interface is extensively studied in fundamental research and plays a key role in the development of electronics, photonics and optoelectronics. Here, we demonstrate an electrically tunable lateral junction at atomically sharp interfaces between dual-gated mono- and bilayer graphene. The transport properties of the mono–bilayer graphene interface are systematically investigated with Ids–Vds curves and transfer curves, which are measured with bias voltage Vds applied in opposite directions across the asymmetric mono–bilayer interface. Nearly 30% difference between the output Ids–Vds curves of graphene channels measured at opposite Vds directions is observed. Furthermore, the measured transfer curves confirm that the conductance difference of graphene channels greatly depends on the doping level, which is determined by dual-gating. The Vds direction dependent conductance difference indicates the existence of a gate tunable junction in the mono–bilayer graphene channel,due to different band structures of monolayer graphene with zero bandgap and bilayer graphene with a bandgap opened by dual-gating. Simulation of the Ids–Vds curves based on a new numerical model validates the gate tunable junction at the mono–bilayer graphene interface from another point of view. The dual-gated mono–bilayer graphene junction and new protocol for Ids–Vds curve simulation pave a possible way for functional applications of graphene in next-generation electronics.

Using excitation-energy-scanning ultrafast infrared microspectroscopy, the excess energy-dependent hot carrier relaxation dynamics in atomically thin two-dimensional transition metal dichalcogenides (2D TMDs) after femtosecond photoexcitation was directly monitored. A good linear relationship between the carrier relaxation time and the excitation wavelength is observed for all measured monolayer (ML) and bilayer (BL) TMD samples, which allows us to determine their quasiparticle bandgaps as well as corresponding exciton binding energies. A carrier-optical-phonon scattering-mediated cascading-relaxation model is proposed, which can perfectly describe all the measured dynamics. As a consequence, the quasiparticle bandgaps of ML MoSe2, ML MoS2, BL MoSe2, and BL WSe2 are determined to be 2.07, 2.11, 1.67, and 1.81 eV, respectively. Our work reveals a general picture for the hot carrier relaxation dynamics in atomically thin TMDs and offers an effective experimental approach in probing the bandgaps of TMDs under ambient conditions.

Atomically thin molybdenum disulfide (MoS2) is a promising semiconductor material for integrated flexible electronics due to its excellent mechanical, optical and electronic properties. However, the fabrication of large-scale MoS2-based flexible integrated circuits with high device density and performance remains a challenge. Here, we report the fabrication of transparent MoS2-based transistors and logic circuits on flexible substrates using four-inch wafer-scale MoS2 monolayers. Our approach uses a modified chemical vapour deposition process to grow wafer-scale monolayers with large grain sizes and gold/titanium/gold electrodes to create a contact resistance as low as 2.9 kΩ μm−1. The field-effect transistors are fabricated with a high device density (1,518 transistors per cm2) and yield (97%), and exhibit high on/off ratios (1010), current densities (~35 μA μm−1), mobilities (~55 cm2 V−1 s−1) and flexibility. We also use the approach to create various flexible integrated logic circuits: inverters, NOR gates, NAND gates, AND gates, static random access memories and five-stage ring oscillators. Wafer-scale monolayers of MoS2 can be used to create flexible transistors and circuits that exhibit on/off ratios of 1010, current densities of ~35 μA μm−1 and mobilities of ~55 cm2 V−1 s−1.

The 2D semiconductor of MoS

Two-dimensional (2D) semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon1-9. So far, high-quality monolayer MoS2 wafers10-12 are already available and various demonstrations from individual transistors to integrated circuits have also been shown13-15. In addition to the monolayer, multilayers have narrower band gaps but improved carrier mobilities and current capacities over the monolayer5,16-18. However, achieving high-quality multilayer MoS2 wafers remains a challenge. Here we report the growth of high quality multilayer MoS2 4-inch wafers via the layer-by-layer epitaxy process. The epitaxy leads to well-defined stacking orders between adjacent epitaxial layers and offers a delicate control of layer numbers up to 6. Systematic evaluations on the atomic structures and electronic properties were carried out for achieved wafers with different layer numbers. Significant improvements on device performances were found in thicker-layer field effect transistors (FETs), as expected. For example, the average field-effect mobility ({\mu}FE) at room temperature (RT) can increase from ~80 cm2V-1s-1 for monolayer to ~110/145 cm2V-1s-1 for bilayer/trilayer devices. The highest RT {\mu}FE=234.7 cm2V-1s-1 and a record-high on-current densities of 1.704 mA{\mu}m-1 at Vds=2 V were also achieved in trilayer MoS2 FETs with a high on/off ratio exceeding 107. Our work hence moves a step closer to practical applications of 2D MoS2 in electronics., Comment: 13 pages,4 Figures

Moiré superlattices have emerged as a highly controllable quantum platform for exploration of various fascinating phenomena, such as Mott insulator states, ferroelectric order, unconventional superconductivity and orbital ferromagnetism. Although remarkable progress has been achieved, current research in moiré physics has mainly focused on the single species properties, while the coupling between distinct moiré quantum phenomena remains elusive. Here we demonstrate, for the first time, the strong coupling between ferroelectricity and correlated states in a twisted quadrilayer MoS2 moiré superlattice, where the twist angles are controlled in sequence to be ∼ 57°, ∼ 0°, and ∼ –57°. Correlated insulator states are unambiguously established at moiré band filling factors v = 1, 2, 3 of twisted quadrilayer MoS2. Remarkably, ferroelectric order can occur at correlated insulator states and disappears quickly as the moiré band filling deviates from the integer fillings, providing smoking gun evidences of the coupling between ferroelectricity and correlated states. Our results demonstrate the coupling between different moiré quantum properties and will hold great promise for new moiré physics and applications.

openaire: EC/H2020/820423/EU//S2QUIP | openaire: EC/H2020/834742/EU//ATOP Atomically thin transition metal dichalcogenides can show a rich variety of bound exciton complex states, such as trions, biexcitons, Fermi polarons, and phonon replicas, because of the reduced dielectric screening and enhanced Coulomb interaction. To date, studies have mainly focused on the complexes of intralayer excitons, while the electrically tunable interlayer exciton (IX) complexes remain elusive. Here, we report the observation of IX complexes with large out-of-plane electric dipole, strong emission intensity, and giant valley responses in bilayer MoS2, through on-resonance photoluminescence spectroscopy. In sharp contrast to the small, positive circular dichroism of intralayer excitons, the circular polarization of IX complexes in bilayer MoS2 can basically reach the theoretical limit (100%) but is negative. Such highly unusual light-valley responses of IX complexes in bilayer MoS2 demonstrate the strongly suppressed valley depolarization and spin-preserving scattering of electrons during the formation. Remarkably, by breaking the time-reversal symmetry with an out-of-plane magnetic field, a record level of spontaneous valley polarization (7.7%/Tesla) is identified for IX complexes in bilayer MoS2. The giant valley polarization of IX complexes in bilayer MoS2, together with the feasibility of electrical/optical/magnetic control, provides a firm basis for the development of next-generation electronic and optoelectronic applications with valley functionalities.

Electronic states and their dynamics are of critical importance for electronic and optoelectronic applications. Here, we probe various relevant electronic states in monolayer MoS2, such as multiple excitonic Rydberg states and free-particle energy bands, with a high relative contrast of up to >200 via broadband (from ~1.79 to 3.10 eV) static third-harmonic spectroscopy, which is further supported by theoretical calculations. Moreover, we introduce transient third-harmonic spectroscopy to demonstrate that third-harmonic generation can be all-optically modulated with a modulation depth exceeding ~94% at ~2.18 eV, providing direct evidence of dominant carrier relaxation processes, associated with carrier-exciton and carrier-phonon interactions. Our results indicate that static and transient third-harmonic spectroscopies are not only promising techniques for the characterization of monolayer semiconductors and their heterostructures, but also a potential platform for disruptive photonic and optoelectronic applications, including all-optical modulation and imaging., 17 pages, 4 figures

Spatially indirect excitons with displaced wavefunctions of electrons and holes play a pivotal role in a large portfolio of fascinating physical phenomena and emerging optoelectronic applications, such as valleytronics, exciton spin Hall effect, excitonic integrated circuit and high-temperature superfluidity. Here, we uncover three types of spatially indirect excitons (including their phonon replicas) and their quantum-confined Stark effects in hexagonal boron nitride encapsulated bilayer WSe2, by performing electric field-tunable photoluminescence measurements. Because of different out-of-plane electric dipole moments, the energy order between the three types of spatially indirect excitons can be switched by a vertical electric field. Remarkably, we demonstrate, assisted by first-principles calculations, that the observed spatially indirect excitons in bilayer WSe2 are also momentum-indirect, involving electrons and holes from Q and K/{\Gamma} valleys in the Brillouin zone, respectively. This is in contrast to the previously reported spatially indirect excitons with electrons and holes localized in the same valley. Furthermore, we find that the spatially indirect intervalley excitons in bilayer WSe2 can exhibit considerable, doping-sensitive circular polarization. The spatially indirect excitons with momentum-dark nature and highly tunable circular polarization open new avenues for exotic valley physics and technological innovations in photonics and optoelectronics., Comment: 14 pages, 4 figures

Publisher Copyright: © 2021 Chinese Physical Society and IOP Publishing Ltd. Transition metal dichalcogenides (TMDs), being valley selectively, are an ideal system hosting excitons. Stacking TMDs together to form heterostructure offers an exciting platform to engineer new optical and electronic properties in solid-state systems. However, due to the limited accuracy and repetitiveness of sample preparation, the effects of interlayer coupling on the electronic and excitonic properties have not been systematically investigated. In this report, we study the photoluminescence spectra of bilayer-bilayer MoS2/WS2 heterostructure with a type II band alignment. We demonstrate that thermal annealing can increase interlayer coupling in the van der Waals heterostructures, and after thermally induced band hybridization such heterostructure behaves more like an artificial new solid, rather than just the combination of two individual TMD components. We also carry out experimental and theoretical studies of the electric controllable direct and indirect infrared interlayer excitons in such system. Ourstudy reveals the impact of interlayer coupling on interlayer excitons and will shed light on the understanding and engineering of layer-controlled spin-valley configuration in twisted van der Waals heterostructures.

Van der Waals heterostructures are the fundamental building blocks of electronic and optoelectronic devices. Here we report that, through a single-step chemical vapour deposition (CVD) process, high-quality vertical bilayer MoS2/WS2 heterostructures with a grain size up to ∼60 μm can be synthesized from molten salt precursors, Na2MoO4 and Na2WO4. Instead of normal pyramid vertical heterostructures grown by CVD, this method synthesizes an anti-pyramid MoS2/WS2 structure, which is characterized by Raman, photoluminescence and second harmonic generation microscopy. Our facile CVD strategy for synthesizing anti-pyramid structures unveils a new synthesis route for the products of two-dimensional heterostructures and their devices for application.

Two-dimensional (2D) moiré materials have attracted a lot of attention and opened a new research frontier of twistronics due to their novel physical properties. Although great progress has been achieved, the inability to precisely and reproducibly manipulate the twist angle hinders the further development of twistronics. Here, we demonstrated an atomic force microscope (AFM) tip manipulation method to control the interlayer twist angle of epitaxial MoS2/graphene heterostructure with an ultra-high accuracy better than 0.1°. Furthermore, conductive AFM and spectroscopic characterizations were conducted to show the effects of the twist angle on moiré pattern wavelength, phonons and excitons. Our work provides a technique to precisely control the twist angle of 2D moiré materials, enabling the possibility to establish the phase diagrams of moiré physics with twist angle.

Direct visualization of the structural defects in two-dimensional (2D) semiconductors at a large scale plays a significant role in understanding their electrical/optical/magnetic properties, but is challenging. Although traditional atomic resolution imaging techniques, such as transmission electron microscopy and scanning tunneling microscopy, can directly image the structural defects, they provide only local-scale information and require complex setups. Here, we develop a simple, non-invasive wet etching method to directly visualize the structural defects in 2D semiconductors at a large scale, including both point defects and grain boundaries. Utilizing this method, we extract successfully the defects density in several different types of monolayer molybdenum disulfide samples, providing key insights into the device functions. Furthermore, the etching method we developed is anisotropic and tunable, opening up opportunities to obtain exotic edge states on demand.

Symmetry breaking in 2D layered materials plays a significant role in their macroscopic electrical, optical, magnetic and topological properties, including, but not limited to, spin-polarization effects, valley-contrasting physics, nonlinear Hall effects, nematic order, ferroelectricity, Bose–Einstein condensation and unconventional superconductivity. Engineering symmetry breaking of 2D layered materials not only offers extraordinary opportunities to tune their physical properties but also provides unprecedented possibilities to introduce completely new physics and technological innovations in electronics, photonics and optoelectronics. Indeed, over the past 15 years, a wide variety of physical, structural and chemical approaches have been developed to engineer the symmetry breaking of 2D layered materials. In this Technical Review, we focus on the recent progress on engineering the breaking of inversion, rotational, time-reversal and gauge symmetries in 2D layered materials, and present our perspectives on how these may lead to new physics and applications. Symmetry breaking plays a significant role in the determination of the fascinating physical phenomena and quantum phase transitions in 2D materials. This Review discusses the state-of-the-art physical and chemical approaches to engineer the symmetry breaking of 2D materials and their heterostructures.

According to the generally accepted nonlinear principles, second-order nonlinear effect (SONE) is strongly inhibited by the crystalline symmetries and thus can manifest only in non-centrosymmetric materials with broken global spatial inversion symmetry. In stark contrast, here we report the observation of direct-current (DC) related SONE, including circular and linear photogalvanic effects, in centrosymmetric bilayer and multilayer MoS2. In conjunction with relativistic first-principles calculations, we uncover that the observed DC-related SONE in inversion-symmetric MoS2 results from the localized electronic states and the locking of spin with the layer and valley pseudospins. Our results provide a new insight into nonlinear physics and would be applicable to other phenomena thus far believed to occur only in non-centrosymmetric systems, such as quantum spin Hall effect, valley Hall effect, piezoelectricity and unconventional Ising superconductivity.

Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree of freedom to enable various fascinating phenomena, which opens a research direction—twistronics. To realize the practical applications of twistronics, it is of the utmost importance to control the interlayer twist angle on large scales. In this work, we report the precise control of interlayer twist angle in centimeter-scale stacked multilayer MoS2 homostructures via the combination of wafer-scale highly-oriented monolayer MoS2 growth techniques and a water-assisted transfer method. We confirm that the twist angle can continuously change the indirect bandgap of centimeter-scale stacked multilayer MoS2 homostructures, which is indicated by the photoluminescence peak shift. Furthermore, we demonstrate that the stack structure can affect the electrical properties of MoS2 homostructures, where 30° twist angle yields higher electron mobility. Our work provides a firm basis for the development of twistronics. Interlayer twist angle between vertically stacked 2D material layers can trigger exciting fundamental physics. Here, the authors report precise control of interlayer twist angle of stacked centimeter scale multilayer MoS2 homostructures that enables continuous change in their indirect bandgap, Moire phonons and electrical properties.

Two-dimensional heterostructures are excellent platforms to realize twist-angle-independent ultra-low friction due to their weak interlayer van der Waals interactions and natural lattice mismatch. However, for finite-size interfaces, the effect of domain edges on the friction process remains unclear. Here we report the superlubricity phenomenon and the edge-pinning effect at MoS

Recently, Yang et al. introduces the twisting degree of freedom into nonlinear optics and demonstrates tunable second-order nonlinear optical response in twisted bilayer graphene. The results open a new route to future nonlinear photonic and optoelectronic applications.

Compared to other two-dimensional (2D) crystals with single or binary elements, 2D ternary layered materials have unique physical properties for potential applications due to the stoichiometric variation and synergistic effect. Here, we report the first investigation of lattice dynamics and interactions between the exciton and lattice degrees of freedom in a 2D ternary semiconductor: indium-selenide-bromide (InSeBr). Via linear polarization resolved Raman scattering measurements, we uncover three Raman modes in few-layer InSeBr, including two A(1g) and one E-g modes. Moreover, through the combination of temperature-dependent Raman scattering experiments and theoretical calculations, we elucidate that few-layer InSeBr would harbor strong coupling between excitons and phonons. Our results may provide a firm basis for the development and engineering of potential optoelectronic devices based on 2D ternary semiconductors. Published under license by AIP Publishing.

Large scale epitaxial growth and transfer of monolayer MoS2 has attracted great attention in recent years. Here, we report the wafer-scale epitaxial growth of highly oriented continuous and uniform monolayer MoS2 films on single-crystalline sapphire wafers by chemical vapor deposition (CVD) method. The epitaxial film is of high quality and stitched by many 0°, 60° domains and 60°-domain boundaries. Moreover, such wafer-scale monolayer MoS2 films can be transferred and stacked by a simple stamp-transfer process, and the substrate is reusable for subsequent growth. Our progress would facilitate the scalable fabrication of various electronic, valleytronic, and optoelectronic devices for practical applications.