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We study the electrocaloric (EC) effect in bulk BaTiO$_3$ (BTO) using molecular dynamics simulations of a first principles-based effective Hamiltonian, combined with direct measurements of the adiabatic EC temperature change in BTO single crystals. We examine in particular the dependence of the EC effect on the direction of the applied electric field at all three ferroelectric transitions, and we show that the EC response is strongly anisotropic. Most strikingly, an inverse caloric effect, i.e., a temperature increase under field removal, can be observed at both ferroelectric-ferroelectric transitions for certain orientations of the applied field. Using the generalized Clausius-Clapeyron equation, we show that the inverse effect occurs exactly for those cases where the field orientation favors the higher temperature/higher entropy phase. Our simulations show that temperature changes of around 1 K can in principle be obtained at the tetragonal-orthorhombic transition close to room temperature, even for small applied fields, provided that the applied field is strong enough to drive the system across the first order transition line. Our direct EC measurements for BTO single crystals at the cubic-tetragonal and at the tetragonal-orthorhombic transitions are in good qualitative agreement with our theoretical predictions, and in particular confirm the occurrence of an inverse EC effect at the tetragonal-orthorhombic transition for electric fields applied along the [001] pseudo-cubic direction., Comment: 12 pages, 11 figures

The electrocaloric effect (ECE) of BaZr$_{x}$Ti$_{1-x}$O$_3$ (BZT) is closely related to the relaxor state transition of the materials. This work presents a systematic study on the ECE and the state transition of the BZT, using a combined canonical and microcanonical Monte Carlo simulations based a lattice-based on a Ginzburg-Landau-type Hamiltonian. For comparison and verification, experimental measurements have been carried on BTO and BZT ($x=0.12$ and $0.2$) samples, including the ECE at various temperatures, domain patterns by Piezoresponse Force Microscopy at room temperature, and the P-E loops at various temperatures. Results show that the dependency of BZT behavior of the Zr-concentration can be classified into three different stages. In the composition range of $ 0 \leq x \leq 0.2 $, ferroelectric domains are visible, but ECE peak drops with increasing Zr-concentration harshly. In the range of $ 0.3 \leq x \leq 0.7 $, relaxor features become prominent, and the decrease of ECE with Zr-concentration is moderate. In the high concentration range of $ x \geq 0.8 $, the material is almost nonpolar, and there is no ECE peak visible. Results suggest that BZT with certain low range of Zr-concentration around $x=0.12 \sim 0.3 $ can be a good candidate with relatively high ECE and simutaneously wide temperature application range at rather low temperature.

Multiferroics are promising for sensor and memory applications, but despite all efforts invested in their research no single-phase material displaying both ferroelectricity and large magnetization at room-temperature has hitherto been reported. This situation has substantially been improved in the novel relaxor ferroelectric single-phase , where polar nanoregions (PNR) transform into static-PNR (SPNR) as evidenced by piezoresponse force microscopy (PFM) and simultaneously enable congruent multiferroic clusters (MFC) to emerge from inherent ferrimagnetic Bi(Fe,Co)O3 regions as verified by magnetic force microscopy (MFM) and secondary ion mass spectrometry (SIMS). On these MFC, exceptionally large direct and converse magnetoelectric coupling coefficients, at room-temperature, were measured by PFM and MFM respectively. We expect the non-ergodic relaxor properties which are governed by the Bi0.5K0.5TiO3 component to play a vital role in the strong ME coupling, by providing an electrically and mechanically flexible environment to MFC. This new class of non-ergodic relaxor multiferroics bears great potential for applications. Especially the prospect of a ME nanodot storage device seems appealing., Comment: Pre-peer review version. Neutron diffraction data are missing with respect to final article

Point defect migration is considered as a mechanism for aging in ferroelectrics. Numerical results are given for the coupled problems of point defect migration and electrostatic energy relaxation in a 2D domain configuration. The peak values of the clamping pressure at domain walls are in the range of $10^6$ Pa, which corresponds to macroscopically observed coercive stresses in perovskite ferroelectrics. The effect is compared to mechanisms involving orientational reordering of defect dipoles in the bulk of domains. Domain clamping is significantly stronger in the drift mechanism than in the orientational picture for the same material parameters., Comment: 24 pages, 12 figures, accepted to Physical Review B