6 results on '"Lv, Yinghuan"'
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2. Analysis of back-gate bias impact on 22 nm FDSOI SRAM cell
3. A highly reliable radiation hardened 8T SRAM cell design
4. The impact of total ionizing dose on RF performance of 130 nm PD SOI I/O nMOSFETs
5. Investigation and Modeling of 22nm Fdsoi Pbti Degradation in Dynamic Voltage Scaling Operation
6. Characterization of 22 nm FDSOI nMOSFETs With Different Backplane Doping at Cryogenic Temperature
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