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We respond to the recent criticism of our paper [Phys. Chem. Chem. Phys., 2022, 24, 9990–9997] and provide further discussion on the analysis of the PdPSe monolayer.

The atomic, electronic, optical, and mechanical properties of penta-like two-dimensional PdPX (X = O, S, Te) nanosheets have been systematically investigated using density functional theory calculations. All three PdPX nanosheets exhibit dynamic and mechanical stability on the basis of an analysis of phonon dispersions and the Born criteria, respectively. The PdPX monolayers are found to be brittle structures. Our calculations demonstrate that the PdPX nanosheets exhibit semiconducting characteristics with indirect band gaps of 0.93 (1.99), 1.34 (2.11), and 0.74 (1.51) eV for X = O, S, Te, respectively, using the PBE (HSE06) functional, where PdPTe is the best material for visible-light photocatalytic water splitting. Our findings give important basic characteristics of penta-like two-dimensional PdPX materials and should motivate further theoretical and experimental investigations of these interesting materials.

Low-symmetry penta-PdPSe nanosheet is computationally studied using first-principle calculations. Penta-PdPSe is predicted to be an excellent 2D materials with excellent visible light absorption, water splitting and thermoelectric performance.

We find that the Sc-, Y-, Ti-, and Zr–MoSi2N4 are metallic systems, while Mn-, Tc-, and Ru–MoSi2N4 are n-type conducting. The Fe–MoSi2N4 is a dilute magnetic semiconductor.

Hybrid structures often possess superior properties to those of their component materials. This arises from changes in the structural or physical properties of the new materials. Here, we investigate the structural, electronic, and gas-adsorption properties of hybrid structures made from graphene/hexagonal boron nitride and 2H-molybdenum disulfide (G/BN@MoS

Very recently, a new class of the multicationic and -anionic entropy-stabilized chalcogenide alloys based on the (Ge, Sn, Pb) (S, Se, Te) formula has been successfully fabricated and characterized experimentally [Zihao Deng et al., Chem. Mater. 32, 6070 (2020)]. Motivated by the recent experiment, herein, we perform density functional theory-based first-principles calculations in order to investigate the structural, mechanical, electronic, optical, and thermoelectric properties. The calculations of the cohesive energy and elasticity parameters indicate that the alloy is stable. Also, the mechanical study shows that the alloy has a brittle nature. The GeSnPbSSeTe alloy is a semiconductor with a direct band gap of 0.4 eV (0.3 eV using spin-orbit coupling effect). The optical analysis illustrates that the first peak of Im(epsilon) for the GeSnPbSSeTe alloy along all polarization directions is located in the visible range of the spectrum which renders it a promising material for applications in optical and electronic devices. Interestingly, we find an optically anisotropic character of this system which is highly desirable for the design of polarization-sensitive photodetectors. We have accurately predicted the thermoelectric coefficients and have calculated a large power factor value of 3.7 x 10(11) W m(-1) K-2 s(-1) for p-type. The high p-type power factor is originated from the multiple valleys near the valence band maxima. The anisotropic results of the optical and transport properties are related to the specific tetragonal alloy unit cell.

The 2D form of the BeO sheet has been successfully prepared (Hui Zhang et al., ACS Nano, 2021, 15, 2497). Motivated by these exciting experimental results on the 2D layered BeO structure, we studied the effect of the adsorption of B atoms on BeO (B@BeO) and substitutional B atoms (B-BeO) at the Be site at different B concentrations. We investigated the structural stability and the mechanical, electronic, magnetic, and optical properties of the mentioned structures using first-principles calculations. We found out that hexagonal BeO monolayers with adsorbed and dopant B atoms have different mechanical stabilities at different concentrations. B@BeO and B-BeO monolayers are brittle structures, and B@BeO structures are more rigid than B-BeO monolayers (at the same B concentration). The adsorption and the formation energy per B atom decrease as the B concentration increases. In comparison, the work function increases when increasing the B concentration. The work function of B@BeO is higher than the corresponding value of B-BeO (at the same B concentration). The magnetic moment linearly increases as the B concentration increases. BeO is a semiconductor with an indirect bandgap of 5.3 eV. The B@BeO and B-BeO structures are semiconductors, except for 3B-BeO (14.2% doped concentration), which is a metal. The bandgap is 1.25 eV for most of the adsorbed atom concentrations. For B-BeO, the bandgap decreases to zero at a concentration of 14.2%. The bandgap of the B-BeO monolayer at different B concentrations is smaller than the corresponding values of the B@BeO monolayer, which indicates that B substitutional doping has a greater effect on the electronic structure of the BeO monolayer than B adsorption doping. We investigated the optical properties, including the dielectric function and absorption coefficient. The results indicate good optical absorption in the range of infrared and ultraviolet energies for the B adsorbed and doped BeO monolayer.

Motivated by the successful preparation of MoSi2N4 monolayers in the last year [Y.-L. Hong et al., Science, 2020, 369, 670–674], we investigate the structural, electronic and optical properties of the MoS2/MoSi2N4 heterostructure (HTS). The phonon dispersion and the binding energy calculations refer to the stability of the HTS. The heterostructure has an indirect bandgap of 1.26 (1.84) eV using PBE (HSE06) which is smaller than the corresponding value of MoSi2N4 and MoS2 monolayers. We find that the work function of the MoS2/MoSi2N4 HTS is smaller than the corresponding value of its individual monolayers. The heterostructure structure can enhance the absorption of light spectra not only in the ultraviolet region but also in the visible region as compared to MoSi2N4 and MoS2 monolayers. The refractive index behaviour of the HTS can be described as the cumulative effect which is well described in terms of a combination of the individual effects (the refractive index of MoSi2N4 and MoS2 monolayers).

Recent developments in the synthesis of highly crystalline ultrathin BiTeX (X = Br, Cl) structures [Debarati Hajra et al., ACS Nano 14, 15626 (2020)] have led to the exploration of the atomic structure, dynamical stability, and electronic, optical, and thermoelectric properties of SbXY (X = Se, Te; Y = Br, I) monolayers via density functional calculations. The calculated phonon spectrum, elastic stability conditions, and cohesive energy verified the stability of the studied SbXY monolayers. The mechanical properties reveal that all studied monolayers are stable and brittle. Based on PBE (PBE + SOC) functional calculations, the SbXY monolayers are semiconductors with indirect bandgaps. The calculated bandgaps using HSE (HSE + SOC) for SbSeBr, SbSeI, SbTeBr, and SbTeI monolayers are between 1.45 and 1.91 eV, which are appealing for applications in nanoelectronic devices. The signature of the Rashba effect appears in the SbXY monolayer. The SbXY monolayers are visible-light active. Hole doping can be an efficient way to increase the electricity production of SbXY monolayers from waste heat energy. This study suggests that SbXY (X = Se, Te; Y = Br, I) monolayers represent promising new electronic, optical, and energy conversion systems.

In this work, novel two-dimensional BC2 X (X=N, P, As) monolayers with X atoms out of the B-C plane, are predicted by means of the density functional theory. The structural, electronic, optical, photocatalytic and thermoelectric properties of the BC2 X monolayers have been investigated. Stability evaluation of the BC 2 X single-layers is carried out by phonon dispersion, ab-initio molecular dynamics (AIMD) simulation, elastic stability, and cohesive energies study. The mechanical properties reveal all monolayers considered are stable and have brittle nature. The band structure calculations using the HSE06 functional reveal that the BC2 N, BC 2 P and BC 2 As are semiconducting monolayers with indirect bandgaps of 2.68 eV, 1.77 eV and 1.21 eV, respectively. The absorption spectra demonstrate large absorption coefficients of the BC 2 X monolayers in the ultraviolet range of the electromagnetic spectrum. Furthermore, we disclose the BC 2 N and BC 2 P monolayers are potentially good candidates for photocatalytic water splitting. The electrical conductivity of BC 2 X is very small and slightly increases by raising the temperature. Electron doping may yield greater electric productivity of the studied monolayers than hole doping, as indicated by the larger power factor in the n-doped region compared to the p-type region. These results suggest that BC 2 X (X=N, P, As)monolayers represent a new promising class of 2DMs for electronic, optical and energy conversion systems.

Two field experiments were conducted during 2016/2017 and 2017/2018 winter seasons in clay soil at El-Kanater El-Khiria, Horticulture research station to study the effect of two irrigation water regimes i.e. 75 & 100 % of potential evapotranspiration (ETc) under six weed control treatments by Pendimethalin (Stomp extra 45.5% CS at the rate of 1.7 l/fedden), oxyfluorfen (Roal 24% EC at the rate of 750 cm3/fed. and/ or supplemented with additional hand hoeing once and hand hoeing twice addition to unweeded check on weeds , garlic yield and their water relationship i.e. consumptive use (Cu) and water use efficiency (WUE).Experimental design was split plot where the two treatments of water regime were allocated in the main plots and weed control treatments in subplots in four replicates. The main findings show that the experimental field was infested by annual weeds for the unweeded check by 1.35 and 1.47 ton/feddan dry weight of weeds, exhibited yield loss of 16.1 and 15.1% of garlic yield per feddan than hand hoeing twice in both 2016 /2017 and 2017/2018 seasons, respectively.Also all various weed categories as well as various yield components and yield of garlic tended to increase significantly in both seasons with adding irrigation water by 100 % from potential evapotranspition (ETc) treatment, meanwhile, water use efficiency for irrigation treatments tended to increase by 75 % from potential evapotranspition (ETc) 19.9 and 25.2% of ETc in 2016 /2017 and 2017/2018 seasons, respectively, and economically feasible. The reduction in garlic yield under irrigation level by 75 % equal 7&4 % in 1st and 2nd seasons and can consider non mean full difference with saving irrigation water476 &579 cubic meter which equal two irrigation. While, water use efficiency for Stomp at 1.7 L/fed, Stomp + h. hoeing once, Roal at 075 L/fed, Roal+ h. hoeing once and h. hoeing twice tended to increase by 34.0 & 53.8 & 28.8 & 43.4 and 29.7%, respectively more than unweeded check in the first season and by 29.2 & 38.4 & 27.0 & 31.9 and 26.5%, respectively, more than unweeded check which attributed the reduction of weed competition for water consumption. All weed control treatments gave significant effect on controlling weeds and increased growth characteristics and bulb garlic yields. Stomp at 1.7 L/fed h plus hand hoeing once gave the highest increase in net income (LE) by 118.3 and 94.4% respectively, more than unweeded check. Regarding, the interaction between irrigation water levels and weed control treatments, there was a little significant effect with soil moisture 100 % and herbicide residue of Stomp and Roal herbicides which in weed control elements used in garlic bulb less than allowable level.

A systematic investigation of the structural, mechanical, electronic, and optical properties of puckered penta-like PdPSeX (X=O, S and Te) Janus monolayers has been performed by means of the plane wave density functional theory. It is confirmed that the pentagonal PdPSeX monolayers are dynamically and mechanical stable by means of analysis of their phonon dispersion curves and the Born condition under harmonic approximation, respectively. The PdPSeX Janus monolayers are disclosed as brittle two-dimensional materials (2DMs). The PBE (HSE06)-based calculations exhibit they are indirect semiconductors with bandgap values of 0.65 (1.44) eV, 1.20 (2.02) eV, and 0.98 (1.70) eV for PbPSeO, PbPSeS, and PbPSeTe monolayer, sequentially. The computational results demonstrate the PdPSeTe monolayer as the best suited candidate for visible light absorption and photocatalytic water splitting within the considered pentagonal PdPSeX monolayers. Our ab-initio-based outcomes provide an insight into the fundamental properties of the penta-like PdPSeX Janus structures and surely would motivate further experimental and theoretical studies to reveal the full application potential of this new type of 2DMs. Funding Agencies|National Research Foundation of Korea - Korean governmentNational Research Foundation of KoreaKorean Government [NRF-2015M2B2A4033123]; TUBITAK ULAKBIMTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK)

Ultraviolet absorbing materials have important applications in which graphene is a strong candidate, yet, few efforts are being exerted to improve its absorption in the UV-region. We show that UV absorption in single-layer graphene can be enhanced by manoeuvring its electronic properties through converting it to a nanomembrane-like structure, or nanomesh. Regular and irregular pores were created by Electron Beam Lithography and a lithography-free process respectively. Theoretical calculations, using density functional theory, confirmed the experimental results, and indicated that the absorption peaks are a result of changes in the band structures of the nanomembrane graphene (NMGs) arising from the pore superlattice.

Recent developments in the synthesis of highly crystalline ultrathin BiTeX (X = Br, Cl) structures [Debarati Hajra

Motivated by the successful preparation of two-dimensional transition metal dichalcogenide (2D-TMD) nanomeshes in the last three years, we use density functional theory (DFT) to study the structural stability, mechanical, magnetic, and electronic properties of porous 2H-MoX2 (X = S, Se and Te) without and with pore passivation. We consider structures with multiple, systematically created pores. The molecular dynamics simulations and cohesive energy calculations showed the stability of the 2D-TMD nanomeshes, with larger stability for those with smaller pores. The lattice undergoes some deformations to accommodate the pore energetically, and as the pore size increases Young's modulus decreases. In most cases, the missing metal atoms disrupt the spin states’ even population, resulting in some nanomeshes becoming magnetic. The electronic gaps of the MoX2 nanomesh systems are diminished because of the emergence of pore-edge localized mid-gap metal 4d states in the spin-polarized spectrum, making some systems half-metallic. The oxygen passivation of the pore edges of 2D-TMD nanomeshes restores the even population of spin states, and makes those systems metallic. Our results can be used in different applications such as spintronics, ion chelation, and molecular sensing applications.

Inspired by the recent successful growth of Ti2C and Ti3C2 monolayers, here, we investigate the structural, electronic, and mechanical properties of functionalized Ti2C and Ti3C2 monolayers by means of density functional theory calculations. The results reveal that monolayers of Ti2C and Ti3C2 are dynamically stable metals. Phonon band dispersion calculations demonstrate that two-surface functionalization of Ti2C and Ti3C2via chalcogenides (S, Se, and Te), halides (F, Cl, Br, and I), and oxygen atoms results in dynamically stable novel functionalized monolayer materials. Electronic band dispersions and density of states calculations reveal that all functionalized monolayer structures preserve the metallic nature of both Ti2C and Ti3C2 except Ti2C-O2, which possesses the behavior of an indirect semiconductor via full-surface oxygen passivation. In addition, it is shown that although halide passivated Ti3C2 structures are still metallic, there exist multiple Dirac-like cones around the Fermi energy level, which indicates that semi-metallic behavior can be obtained upon external effects by tuning the energy of the Dirac cones. In addition, the computed linear-elastic parameters prove that functionalization is a powerful tool in tuning the mechanical properties of stiff monolayers of bare Ti2C and Ti3C2. Our study discloses that the electronic and structural properties of Ti2C and Ti3C2 MXene monolayers are suitable for surface modification, which is highly desirable for material property engineering and device integration.

Inspired by the recent successful growth of Ti2C and Ti3C2 monolayers, here, we investigate the structural, electronic, and mechanical properties of functionalized Ti2C and Ti3C2 monolayers by means of density functional theory calculations. The results reveal that monolayers of Ti2C and Ti3C2 are dynamically stable metals. Phonon band dispersion calculations demonstrate that two-surface functionalization of Ti2C and Ti3C2via chalcogenides (S, Se, and Te), halides (F, Cl, Br, and I), and oxygen atoms results in dynamically stable novel functionalized monolayer materials. Electronic band dispersions and density of states calculations reveal that all functionalized monolayer structures preserve the metallic nature of both Ti2C and Ti3C2 except Ti2C–O2, which possesses the behavior of an indirect semiconductor via full-surface oxygen passivation. In addition, it is shown that although halide passivated Ti3C2 structures are still metallic, there exist multiple Dirac-like cones around the Fermi energy level, which indicates that semi-metallic behavior can be obtained upon external effects by tuning the energy of the Dirac cones. In addition, the computed linear-elastic parameters prove that functionalization is a powerful tool in tuning the mechanical properties of stiff monolayers of bare Ti2C and Ti3C2. Our study discloses that the electronic and structural properties of Ti2C and Ti3C2 MXene monolayers are suitable for surface modification, which is highly desirable for material property engineering and device integration.

Many sensing applications depend on molecular adsorption on surfaces. Nanostructured materials have been the focus of many research efforts aimed at developing sensors for toxic gases. In this work, we study the adsorption of NO 2 and SO2 molecules on boron nitride nanocones (BNNCs), using first principles calculations. Aluminum doping of BNNCs (Al–BNNCs) significantly increases the adsorption at the apex of the cone, with a minor change upon inclusion of the van der Waals interactions. Adsorption of NO 2 and SO2 causes a considerable change in the HOMO-LUMO gap of BNNC/Al-BNNC, suggesting that BNNC can be used as templates for sensing and removal of NO2 and SO2.

The electronic and optical properties of vertical heterostructures (HTSs) and lateral heterojunctions (HTJs) between (B,N)-codoped graphene (dop@Gr) and graphene (Gr), C3N, BC3 and h-BN monolayers are investigated using van der Waals density functional theory calculations. We have found that all the considered HTSs are energetically and thermally feasible at room temperature, and therefore they can be synthesized experimentally. The dop@Gr/Gr, BC3/dop@Gr and BN/dop@Gr HTSs are semiconductors with direct bandgaps of 0.1 eV, 80 meV and 1.23 eV, respectively, while the C3N/dop@Gr is a metal because of the strong interaction between dop@Gr and C3N layers. On the other hand, the dop@Gr-Gr and BN-dop@Gr HTJs are semiconductors, whereas the C3N-dop@Gr and BC3-dop@Gr HTJs are metals. The proposed HTSs can enhance the absorption of light in the whole wavelength range as compared to Gr and BN monolayers. The applied electric field or pressure strain changes the bandgaps of the HTSs and HTJs, indicating that these HTSs are highly promising for application in nanoscale multifunctional devices.

In this work, motivated by the fabrication of an AlSb monolayer, we have focused on the electronic, mechanical and optical properties of AlSb and InSb monolayers with double-layer honeycomb structures, employing the density functional theory approach. The phonon band structure and cohesive energy confirm the stability of the XSb (X = Al and In) monolayers. The mechanical properties reveal that the XSb monolayers have a brittle nature. Using the GGA + SOC (HSE + SOC) functionals, the bandgap of the AlSb monolayer is predicted to be direct, while InSb has a metallic character using both functionals. We find that XSb (X = Al, In) two-dimensional bodies can absorb ultraviolet light. The present findings suggest several applications of AlSb and InSb monolayers in novel optical and electronic usages.

Efficient conversion of mechanical energy in our surrounding environment into electric power has become a promising strategy for meeting the ever-increasing energy consumption of small and distributed electronics. The contact-electrification-based triboelectric nanogenerators are one of the emerging devices to achieve such energy conversion. However, conventional contact electrifications between two insulators are limited by their low current density and alternating current output. Here we report a nanoscale contact electrification induced direct current output based on the flow of electrons from the defect states of the ZnO nanowires-packed film to the contact sliding conductive AFM tip. Combining experimental materials characterization and density functional theory (DFT) calculations, the direct current output is closely related to the concentration of oxygen vacancy defect states on the surface of ZnO nanowires: the higher the oxygen vacancy concentration, the higher the current output. Under optimized conditions, we obtain an ultrahigh current density of ~108 A m-2, which is several orders of magnitude higher than that of the conventional contact electrification and other effects. This work provides a new route of utilizing defect states contributed contact electrification for realizing nanoscale mechanical energy scavenging.

Graphene nanomeshes (GNMs) are novel materials that recently raised a lot of interest. They are fabricated by forming a lattice of pores in graphene. Depending on the pore size and pore lattice constant, GNMs can be either semimetallic or semiconducting with a gap large enough (∼ 0.5 eV) to be considered for transistor applications. The fabrication process is bound to produce some structural disorder due to variations in pore size. Recent electronic transport measurements in GNM devices (ACS Appl. Mater. Interfaces 10, 10 362, 2018) show a degradation of their bandgap in devices having pore-size disorder. It is therefore important to understand the effect of such variability on the electronic properties of semiconducting GNMs. In this work we use the density functional-based tight binding formalism to calculate the electronic properties of GNM structures with different pore sizes, pore densities, and with hydrogen and oxygen pore edge passivations. We find that structural disorder reduces the electronic gap and the carrier group velocity, which may interpret recent transport measurements in GNM devices. Furthermore, the trend of the bandgap with structural disorder is not significantly affected by the change in pore edge passivation. Our results show that even with structural disorder, GNMs are still attractive from a transistor device perspective.

Strontium titanate, SrTiO3, with the perovskite ABO3 structure is known as one of the most efficient photocatalyst materials for the overall water splitting reaction. Doping with appropriate metal cations at the A site or at the B site substantially increases the quantum yield to split water into H2 and O2. The site occupied by the guest dopant in the SrTiO3 host thus plays a key role in dictating the water splitting activity. However, little is known about the detailed structure of the dopant site in the host lattice. In this study, the local structure of In3+ cations, which were shown to improve the water splitting activity of SrTiO3, is investigated with X-ray absorption fine structure spectroscopy and density functional theory (DFT) calculations. The In3+ cations exclusively substitute for Ti4+ cations at the B site to form InO6 octahedra. Further optical experiments using UV-Vis diffuse reflectance spectroscopy and DFT calculations of the density of states indicate that the substitution of In3+ for Ti4+ does not alter the band structure and bandgap energy (remaining at 3.2 eV). The mechanism underlying the increased water splitting activity is discussed in relation to occupation of the B site by In3+ cations.

Strontium titanate, SrTiO3, with the perovskite ABO3 structure is known as one of the most efficient photocatalyst materials for the overall water splitting reaction. Doping with appropriate metal cations at the A site or at the B site substantially increases the quantum yield to split water into H2 and O2. The site occupied by the guest dopant in the SrTiO3 host thus plays a key role in dictating the water splitting activity. However, little is known about the detailed structure of the dopant site in the host lattice. In this study, the local structure of In3+ cations, which were shown to improve the water splitting activity of SrTiO3, is investigated with X-ray absorption fine structure spectroscopy and density functional theory (DFT) calculations. The In3+ cations exclusively substitute for Ti4+ cations at the B site to form InO6 octahedra. Further optical experiments using UV-Vis diffuse reflectance spectroscopy and DFT calculations of the density of states indicate that the substitution of In3+ for Ti4+ does not alter the band structure and bandgap energy (remaining at 3.2 eV). The mechanism underlying the increased water splitting activity is discussed in relation to occupation of the B site by In3+ cations.