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4 results on '"M. Samnouni"'

1. High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers

Author

G. Di Gioia, E. Frayssinet, M. Samnouni, V. Chinni, P. Mondal, J. Treuttel, X. Wallart, M. Zegaoui, G. Ducournau, Y. Roelens, Y. Cordier, M. Zaknoune, Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), LERMA Cergy (LERMA), Laboratoire d'Etude du Rayonnement et de la Matière en Astrophysique et Atmosphères = Laboratory for Studies of Radiation and Matter in Astrophysics and Atmospheres (LERMA), École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut national des sciences de l'Univers (INSU - CNRS)-Observatoire de Paris, Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-CY Cergy Paris Université (CY)-École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-CY Cergy Paris Université (CY), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), This work was supported by the French ANR (Agence Nationale de la Recherche), under the CE24 ‘SchoGAN’ project. This work was also supported by the CPER 'Photonics for Society', the CPER 'WAVETECH', and the Hauts de France Regional Council and the French Network RENATECH, Renatech Network, and ANR-17-CE24-0034,SchoGaN,Diodes Schottky GaN pour la génération de signaux THz(2017)

Subjects
wide band gap semiconductor, Materials Chemistry, Schottky diode, frequency multipliers, THz, Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, GaN, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience; Quasi-vertical gallium nitride (GaN) Schottky diodes on silicon carbide (SiC) substrates were fabricated for frequency multiplier applications. The epitaxial structure employed had an n− layer of 590 nm with doping 6.6 × 1016 cm−3, while the n+ layer was 950 nm thick, with doping 2 × 1019 cm−3. Potassium hydroxide (KOH) chemical surface treatment before Schottky contact metallization was employed to study its effect in improving the diode parameters. The KOH-treated diode demonstrated a breakdown voltage of − 27.5 V, which is the highest reported for this type of diode. Cut-off frequencies around 500 GHz were obtained at high reverse bias (− 25 V) in spite of high series resistance. The result obtained in breakdown voltage value warrants further research in surface treatment and post-annealing of the Schottky contact optimization in order to decrease the series resistance.

Published
2023
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2. 75 nm gate length PHEMT with f max = 800 GHz using asymmetric gate recess: RF and noise investigation

Author

C. Coinon, N. Wichmann, Sylvie Lepilliet, Sylvain Bollaert, M. Samnouni, Xavier Wallart, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), This work was developed in the Institute of Electronic Microelectronic and Nanotechnology (IEMN) cleanroom, a part of the French National Fabrication Network (RENATECH)., PCMP CHOP, Renatech Network, Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
010302 applied physics, Physics, Noise measurement, Oscillation, Transistor, High-electron-mobility transistor, Noise figure, small-signal equivalent circuit (SSEC), 01 natural sciences, Noise (electronics), Cutoff frequency, Electronic, Optical and Magnetic Materials, law.invention, high-electron mobility transistor (HEMT), noise figure (NF), chemistry.chemical_compound, [SPI]Engineering Sciences [physics], chemistry, law, 0103 physical sciences, Indium phosphide, Asymmetric gate recess, Electrical and Electronic Engineering, Atomic physics
Abstract

We report a high maximum frequency of oscillation ( ${f} _{\text {max}}$ ) and a current-gain cutoff frequency ( ${f} _{\text {T}}$ ) of 800 and 260 GHz, respectively, with pseudomorphic high-electron mobility transistor (PHEMT), using an InGaAs/InAs composite channel and an asymmetric gate recess. This result was achieved with long gate length ${L} _{\text {G}} = {75}$ nm. The RF small signal equivalent circuit (SSEC) was extracted up to 110 GHz. Moreover, noise parameters extraction gives a minimum noise figure (NFmin) of 0.8 dB (with associated gain ${G} _{\text {ass}} = {16}$ dB) and 1.8 dB (with associated gain ${G} _{\text {ass}} = {11.6}$ dB) at 40 and 94 GHz, respectively. In this study, the gate leakage current was considered in the SSEC of the transistor ( ${g} _{\text {gf}}$ and ${g} _{\text {df}}$ ) and for extraction of the noise parameters.

Published
2021
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3. Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations

Author

J. Mateos, B. Orfao, M. Samnouni, G.Di Gioia, Diego Moro-Melgar, M. Zaknoune, Beatriz G. Vasallo, Tomas Gonzalez, Susana Perez, Universidad de Salamanca, Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Departamento de Fisica Aplicada [Salamanca], This work was supported in part by Spanish MINECO and FEDER under Project TEC2017-83910-R and in part by the Junta de Castilla y León and FEDER under Project SA254P18. The work of B. Orfao was supported by the Junta de Castilla y León., Advanced NanOmeter DEvices - IEMN [ANODE - IEMN], and Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Subjects
Permittivity, Materials science, Dielectric, Passivation, 2203 Electrónica, Schottky barrier, Monte Carlo method, Fringing capacitance, Edge effects, Monte Carlo, Schottky Barrier Diodes, permittivity, dielectric, fringing capacitance, Edge (geometry), Capacitance, Condensed Matter::Materials Science, [SPI]Engineering Sciences [physics], Diode, [PHYS]Physics [physics], business.industry, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Optoelectronics, Schottky barrier diodes, business, Permitivity
Abstract

[EN]Schottky barrier diodes (SBDs) with realistic geometries have been studied by means of a 2-D ensemble Monte Carlo simulator. The non-linearity of the Capacitance-Voltage (C-V) characteristic is the most important parameter for optimizing SBDs as frequency multipliers. In this paper, by changing the values of several technological parameters, we analyze their influence on the edge fringing capacitance in a GaN SBD. We have found that the parameters related with the dielectric used for the passivation and the lateral extension of the epilayer significantly affect the fringing capacitance, thus increasing the value of the total capacitance above the ideal one., Spanish MINECO and FEDER under Project TEC2017-83910-R and Junta de Castilla y León and FEDER under Project SA254P18

Published
2021
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4. 1.2 THz maximum frequency of oscillation achieved by using 75 nm gate length and asymmetric gate recess for InGaAs/InAlAs PHEMT

Author

Xavier Wallart, Sylvain Bollaert, C. Coinion, M. Samnouni, N. Wichmann, and S. Lepilliet

Subjects
Materials science, Terahertz radiation, Oscillation, Gate length, Ingaas inalas, High-electron-mobility transistor, Atomic physics, Cutoff frequency
Abstract

We report a high maximum frequency of oscillation ( $f_{\max}$ ) and a current-gain cutoff frequency $(\boldsymbol{f}_{\mathbf{T}}).\boldsymbol{f}_{\mathbf{\max}}/\boldsymbol{f}_{\mathbf{T}} =1.2\ \mathbf{THz}/220 \mathbf{GHz}$ ; at $\boldsymbol{V}_{\boldsymbol{D}\boldsymbol{S}}=1\mathbf{V}$ with pseudomorphic high-electron mobility transistor (PHEMT), using a composite, InGaAs/InAs channel and an asymmetric gate recess. This result was achieved with long gate length $\boldsymbol{L}_{\boldsymbol{G}}=75\ \mathbf{nm}$ . The gate-source distance was $0.5\ \mathbf{\mu}\mathbf{m}$ , in the recessed region the asymmetric distance L RD was 225 nm.

Published
2019
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