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Scattering of Ne+ ions at small angles of incidence from a stepped InGaP(001) surface by the E0=5 keV was simulated using computer simulation. The trajectories of dechanneled ions from defect surface, as well as their energies at the scattering and scattering angle, are studied. It is shown that before dechanneling, the frequency and amplitude of the trajectory of ions, which move the surface channel formed by the stepped atom, increase. The energy distributions of these ions are obtained and the part of the spectrum corresponding to these ions is determined. It has been established that the energetic dechanneled ions formed low intensity peaks on the low-energy part of the spectrum.

It has been shown that this method is quite suitable for surface studies and diagnostics of many component materials. The values of the azimuthal angle of distribution of Ne, Ar and Xe ions scattered from InGaP (001) are obtained. The relationship between the spatial variables of the scattered beam (mainly azimuthal angular spectra) and the type of ions has been established. The correlation between focusing properties of surface semichannel with a type of bombardment ion at the different angle of incidence has been shown.

In this paper presents the investigation of the surface Al2O3 by ion scattering spectroscopy. The trajectory of small angle scattered ions calculated by the method of binary collision approximation. It was found dependence of inelastic energy loss and trajectories of scattered ions. The value of inelastic energy loss scattered ions almost depend to the angle of incidence and the geometrical parameters of surface semichannels.