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Exploration of new dielectrics with large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near breakdown limit. To address this looming challenge, we demonstrate that rare-earth-metal fluorides with extremely-low ion migration barriers can generally exhibit an excellent capacitive coupling over 20 $\mu$F cm$^{-2}$ (with an equivalent oxide thickness of ~0.15 nm and a large effective dielectric constant near 30) and great compatibility with scalable device manufacturing processes. Such static dielectric capability of superionic fluorides is exemplified by MoS$_2$ transistors exhibiting high on/off current ratios over 10$^8$, ultralow subthreshold swing of 65 mV dec$^{-1}$, and ultralow leakage current density of ~10$^{-6}$ A cm$^{-2}$. Therefore, the fluoride-gated logic inverters can achieve significantly higher static voltage gain values, surpassing ~167, compared to conventional dielectric. Furthermore, the application of fluoride gating enables the demonstration of NAND, NOR, AND, and OR logic circuits with low static energy consumption. Notably, the superconductor-to-insulator transition at the clean-limit Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ can also be realized through fluoride gating. Our findings highlight fluoride dielectrics as a pioneering platform for advanced electronics applications and for tailoring emergent electronic states in condensed matters., Comment: 33 pages, 5 figures

Sliding ferroelectricity is a unique type of polarity recently observed in a properly stacked van der Waals bilayer. However, electric-field control of sliding ferroelectricity is hard and could induce large coercive electric fields and serious leakage currents which corrode the ferroelectricity and electronic properties, which are essential for modern two-dimensional electronics and optoelectronics. Here, we proposed laser-pulse deterministic control of sliding ferroelectricity in bilayer h-BN by first principles and molecular dynamics simulation with machine-learned force fields. The laser pulses excite shear modes which exhibit certain directional movements of lateral sliding between bilayers. The vibration of excited modes under laser pulses is predicted to overcome the energy barrier and achieve the switching of sliding ferroelectricity. Furthermore, it is found that three possible sliding transitions - between AB (BA) and BA (AB) stacking - can lead to the occurrence of dynamical magnetic fields along three different directions. Remarkably, the magnetic fields are generated by the simple linear motion of nonmagnetic species, without any need for more exotic (circular, spiral) pathways. Such predictions of deterministic control of sliding ferroelectricity and multi-states of dynamical magnetic field thus expand the potential applications of sliding ferroelectricity in memory and electronic devices.

The first-principles-based effective Hamiltonian scheme provides one of the most accurate modeling technique for large-scale structures, especially for ferroelectrics. However, the parameterization of the effective Hamiltonian is complicated and can be difficult for some complex systems such as high-entropy perovskites. Here, we propose a general form of effective Hamiltonian and develop an active machine learning approach to parameterize the effective Hamiltonian based on Bayesian linear regression. The parameterization is employed in molecular dynamics simulations with the prediction of energy, forces, stress and their uncertainties at each step, which decides whether first-principles calculations are executed to retrain the parameters. Structures of BaTiO$_3$, Pb(Zr$_{0.75}$Ti$_{0.25}$)O$_3$ and (Pb,Sr)TiO$_3$ system are taken as examples to show the accuracy of this approach, as compared with conventional parametrization method and experiments. This machine learning approach provides a universal and automatic way to compute the effective Hamiltonian parameters for any considered complex systems with super-large-scale (more than $10^7$ atoms) atomic structures., Comment: 11 pages, 4 figures

The electrocaloric effect (ECE) offers a promising alternative to the traditional gas compressing refrigeration due to its high efficiency and environmental friendliness. The unusual negative electrocaloric effect refers to the adiabatic temperature drops due to application of electric field, in contrast with the normal (positive) ECE, and provides ways to improve the electrocaloric efficiency in refrigeration cycles. However, negative ECE is unusual and requires a clear understanding of microscopic mechanisms. Here, we found unexpected and extensive negative ECE in nonpolar orthorhombic, tetragonal, and cubic phases of halide and oxide perovskite at wide range of temperature by means of first-principle-based large scale Monte Carlo methods. Such unexpected negative ECE originates from the octahedral tilting related entropy change rather than the polarization entropy change under the application of electric field. Furthermore, a giant negative ECE with temperature change of 8.6 K is found at room temperature. This giant and extensive negative ECE in perovskite opens up new horizon in the research of caloric effects and broadens the electrocaloric refrigeration ways with high efficiency., Comment: 11 pages, 7 figures

Doped HfO2 thin films exhibit robust ferroelectric properties even for nanometric thicknesses, are compatible with current Si technology and thus have great potential for the revival of integrated ferroelectrics. Phase control and reliability are core issues for their applications. Here we show that, in (111)-oriented 5%La:HfO2 (HLO) epitaxial thin films deposited on (La0.3Sr0.7)(Al0.65Ta0.35)O3 substrates, the flexoelectric effect, arising from the strain gradient along the films normal, induces a rhombohedral distortion in the otherwise Pca21 orthorhombic structure. Density functional calculations reveal that the distorted structure is indeed more stable than the pure Pca21 structure, when applying an electric field mimicking the flexoelectric field. This rhombohedral distortion greatly improves the fatigue endurance of HLO thin films by further stabilizing the metastable ferroelectric phase against the transition to the thermodynamically stable non-polar monoclinic phase during repetitive cycling. Our results demonstrate that the flexoelectric effect, though negligibly weak in bulk, is crucial to optimize the structure and properties of doped HfO2 thin films with nanometric thicknesses for integrated ferroelectric applications.

Non-collinear spin order that breaks space inversion symmetry and allows efficient electric-field control of magnetism makes BiFeO$_3$ a promising candidate for applications in low-power spintronic devices. Epitaxial strain effects have been intensively studied and exhibit significant modulation of the magnetic order in BiFeO$_3$, but tuning its spin structure with continuously varied uniaxial strain is still lacking up to date. Here, we apply \emph{in situ} uniaxial strain to a freestanding BiFeO$_3$ film and use scanning NV microscope to image the nanoscale magnetic order in real-space. The strain is continuously increased from 0\% to 1.5\% and four images under different strains are acquired during this period. The images show that the spin cycloid tilts by $\sim 12.6^\circ$ when strain approaches 1.5\%. A first principle calculation has been processed to show that the tilting is energetically favorable under such strain. Our \emph{in situ} strain applying method in combination with scanning NV microscope real-space imaging ability paves a new way in studying the coupling between magnetic order and strain in BiFeO$_3$ films., Comment: 11 pages, 4 figures in main text, 5 figures in SI