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1. 12.4 1.4Gsearch/s 2Mb/mm2 TCAM using two-phase-precharge ML sensing and power-grid preconditioning to reduce Ldi/dt power-supply noise by 50%

2. A Double-Data- Rate 2 (DDR2) Interface Phase-Change Memory with 533MB/s Read -Write Data Rate and 37.5ns Access Latency for Memory-Type Storage Class Memory Applications

3. A 256-Mcell Phase-Change Memory Chip Operating at$2{+}$Bit/Cell

5. A 16-Mb MRAM Featuring Bootstrapped Write Drivers.

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