171 results on '"Mahadik, Nadeemullah A."'
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2. Hydrogenated silicene grown by plasma enhanced chemical-vapor deposition.
3. Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability.
4. Infrared optical properties of SiGeSn and GeSn layers grown by molecular beam epitaxy.
5. SiGeSn buffer layer for the growth of GeSn films.
6. Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs
7. Nanoscale Infrared Spectroscopic Characterization of Extended Defects in 4H-Silicon Carbide
8. Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All ‘Room Temperature’ Ion Implantations
9. Experimental determination of critical thickness limitations of (010)β -(AlxGa1−x)2O3 heteroepitaxial films
10. Formation mechanism of horizontal-half-loop arrays and stacking fault expansion behavior in thick SiC epitaxial layers.
11. Evolution of lattice distortions in 4H-SiC wafers with varying doping
12. Dislocation analysis of epitaxial InAsSb on a metamorphic graded layer using x-ray topography.
13. Review of virtual substrate technologies for 6.3 Ångström lattice constants
14. Microstructural evolution of extended defects in 25μ m thick GaN homo-epitaxial layers
15. Experimental determination of critical thickness limitations of (010) β-(AlxGa1−x)2O3 heteroepitaxial films.
16. The Thermodynamics and Kinetics of Phase Separation in Iii-V Semiconductor Alloys
17. A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs
18. Microstructural evolution of extended defects in 25 μm thick GaN homo-epitaxial layers.
19. Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates
20. Defects in 4H-SiC epilayers affecting device yield and reliability
21. Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures
22. Cu2-xS/PbS Core/Shell Nanocrystals with Improved Chemical Stability
23. Structure and Morphology of Inclusions in 4° Offcut 4H-SiC Epitaxial Layers
24. Ultra-low resistivity Al + implanted 4H–SiC obtained by microwave annealing and a protective graphite cap
25. Exploiting Phonon-Resonant Near-Field Interaction for the Nanoscale Investigation of Extended Defects
26. Thermally stable Ge/Cu/Ti ohmic contacts to n-type GaN
27. Solid-state microwave annealing of ion-implanted 4H–SiC
28. Double-crystal X-ray topography of freestanding HVPE grown n-type GaN
29. Nanoscale Spectroscopy of Dielectric Properties of Mica
30. Structural and electronic properties of Si- and Sn-doped (−201) β-Ga2O3 annealed in nitrogen and oxygen atmospheres
31. Binary Superlattices of Infrared Plasmonic and Excitonic Nanocrystals
32. Exploiting Phonon‐Resonant Near‐Field Interaction for the Nanoscale Investigation of Extended Defects
33. Structural characteristics of a single-crystalline Sr0.75Ba0.25NbO3 electro-optic material
34. High-resolution dislocation imaging and micro-structural analysis of HVPE-βGa2O3 films using monochromatic synchrotron topography
35. Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga2O3
36. Nanoscale Spectroscopy of Dielectric Properties of Mica.
37. Evaluating Compositional Variation in InGaAs Random Alloys Using Atom Probe Tomography
38. Depth Profiling of Carrier Lifetime in Thick 4H-SiC Epilayers Using Two-Photon Absorption
39. (Invited) Thick, Low-Doped Homoepitaxial Ga2O3 for Power Electronics Applications
40. Sb-incorporation in MBE-grown metamorphic InAsSb for long-wavelength infrared applications
41. Carrier lifetime variation in thick 4H-SiC epilayers using two-photon absorption
42. Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates
43. Microwave annealing of Mg-implanted and in situ Be-doped GaN
44. (Invited) Controlling Materials Defects for SiC Power Devices
45. High absorption long wave infrared superlattices using metamorphic buffers
46. Ga2O3 Schottky barrier and heterojunction diodes for power electronics applications.
47. Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga2O3.
48. High-resolution dislocation imaging and micro-structural analysis of HVPE-βGa2O3 films using monochromatic synchrotron topography.
49. (Invited) Recent Progress in Medium-Voltage Vertical GaN Power Devices.
50. Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition
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