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Silicene, a 2D hexagonal structure of silicon, has shown great promise for next-generation advanced electronic devices due to recent progress. However, one major obstacle to its application and integration into devices is its strong tendency of rapid oxidation in an ambient environment. Enhancing the chemical inertness by means of chemical modification without comprising its unique structure and properties is vital. Here, we report the fabrication of hydrogenated silicene grown on polycrystalline Ag films by means of plasma-enhanced chemical-vapor deposition (PECVD) with proper hydrogen dilution. Our Raman spectroscopy and x-ray diffraction results show the existence of typical monolayer and few-layer silicene. The x-ray photoelectron spectroscopy demonstrates its oxidation resistance after a few minutes of air exposure in a class 100 clean room. We propose that PECVD silicene can be an alternative to molecular-beam-epitaxy silicene for potential low-cost and large-area silicene applications. [ABSTRACT FROM AUTHOR]

To this day, trapezoidal defects are found in clusters and high counts in wafers representing the industry standard in terms of material quality being produced. This study sheds light on the nature, origin, behavior, and impact of this defect on device yield and reliability. Trapezoidal defects in 4H-SiC epitaxial layers were investigated by photoluminescence (PL) imaging, scanning electron microscopy (SEM), cathodoluminescence spectrum imaging (CLSI), SEM electron beam induced current (EBIC) imaging, and by transmission electron microscopy (TEM) observation. The bar-shaped stacking faults were identified by the PL and CL measurements with a peak emission wavelength of 420 and 450 nm. An optoelectronic behavioral study based on the recombination enhanced dislocation glide mechanism revealed how expanding dislocations and stacking faults interact with each other. Combining the luminescence and microscopy results, the nature of the stacking faults was identified as being a combination of Shockley-type and Frank-type stacking faults. The TEM analysis showed that these defects originate from the substrate and the stacking sequences of some of the faults were determined as (...2, 4, 2...) and (...2, 3, 2...) in the Zhdanov's notation by high-resolution TEM. The origin of this defect is speculated based on our results and previous reports. The EBIC imaging showed that the high density of SFs in these towers is a strong site of carrier recombination, which presumably has an impact on the transfer characteristics of SiC devices. Furthermore, these defects have shown to impact metal oxide semiconductor field effect transistors electrical performance via an increase in the on-state resistance depending on the coverage percentage of the tower of defects in the active area of the device. [ABSTRACT FROM AUTHOR]

The infrared optical properties of thick GeSn films (>500 nm) having 10% Sn concentration and of SiGeSn layers, utilized for the growth of strain-relieved, direct-gap GeSn films by molecular beam epitaxy, are investigated. Two growth methods are used: a graded-growth structure and a stepped-growth structure that help us to illustrate the properties of the GeSn and SiGeSn layers. Interestingly, there can be strong absorption in SiGeSn films throughout the infrared. We observe an increase in infrared absorption with increasing Sn concentration up to 21% Sn and in films, where the Sn is held constant at 18%, with increasing Si concentration up to 30%. Cavity effects in the infrared transmission measurement of stepped-growth structures are observed and associated with reflections at growth interfaces. Si–Si bond formation is proposed to occur at high Si concentrations in SiGeSn films, and the bandgap in SiGeSn films appears to decrease with increasing Si and Sn concentrations. [ABSTRACT FROM AUTHOR]

Inclusion of Si atoms to the growth surface during the molecular beam epitaxy of Ge and Sn to form a SiGeSn alloy was identified as a reactive surface species and as a means to compensate strain, which allowed for the subsequent growth of GeSn alloys with high Sn content. The development of a SiGeSn virtual substrate having a 15% Sn concentration and lattice parameter larger than 5.72 Å is demonstrated, using atomic force microscopy, x-ray reciprocal space mapping, and transmission electron microscopy, as a method for the direct growth of thick (>500 nm) fully relaxed GeSn alloys with greater than 10% Sn. This buffer layer enables the monolithic integration of GeSn with silicon for optoelectronic applications, as the SiGeSn virtual substrate allows for selective chemical etching of GeSn, which is important for device fabrication. [ABSTRACT FROM AUTHOR]

The formation mechanism of half-loop arrays (HLAs) that form parallel (horizontal) to the step-flow direction in 120 μm thick 4H-silicon carbide (SiC) epitaxial layers was investigated using ultraviolet photoluminescence (UVPL) imaging and x-ray topography (XRT). The horizontal-HLAs are generated by the multiplication and glide of basal plane dislocation (BPD) loops that are created within the epitaxial layer. The BPD loops were initiated after ∼40–50 μm of growth from a small BPD segment, which glides toward the surface as well as the substrate interface. BPD multiplication occurs and several loops are generated. Some of these loops are terminated by the growth front and create HLAs due to the 4° offcut of the wafer. XRT images show that successive BPD loops interact with previously generated HLA segments. Successive loops also interact with the moving growth front and create new HLAs that are spatially displaced from the previous HLA segments. These appear as a string of horizontal-HLAs in the UVPL images. The expansion of stacking faults (SFs) from these horizontal-HLAs was investigated, and we show that they all lie on the same basal plane. The complex defect structure is created in the epitaxial layer from a single BPD loop but extends over a large (∼5 × 0.5 cm2) region of the SiC wafer during epitaxial growth. The high density of HLAs and BPDs would generate several SFs upon device operation leading to severe device degradation. [ABSTRACT FROM AUTHOR]

Dislocations in compositionally graded virtual substrates and InAsSb epitaxial layers for long wavelength (8–12 μm) photodetectors have been investigated with high-resolution x-ray topography (XRT). By varying the imaging conditions, the properties of the virtual substrate and InAsSb could be individually characterized. We observe the formation of misfit dislocations near the interface predominantly along the (110) direction and with less relaxation along the (1–10) direction. The misfit dislocations do not form a uniform array of dislocations but rather appear as dislocation bundles. Threading dislocation clusters, which could limit device performance, are observed along the misfit arrays with a density ∼1 × 105 cm−2 and a total averaged density of less than 1 × 106 cm−2. The prospects for using XRT for further optimization of virtual substrate and development of low defect bulk InAsSb layers are discussed. [ABSTRACT FROM AUTHOR]

The effect of heteroepitaxial β-(AlxGa1−x)2O3 film thickness and Al content on surface morphology was characterized to experimentally determine the critical thickness limitations of the (010) β-(AlxGa1−x)2O3/Ga2O3 heterostructure. High-resolution x-ray diffraction was used to assess the strain state of the films; reciprocal space mapping (RSM) revealed that even cracked films were still fully strained. In cracked films, diffuse scattering was observed in RSMs, indicating lattice tilting. Cracking of the films was investigated using atomic force microscopy (AFM), x-ray topography (XRT), bright-field scanning transmission electron microscopy (BF-STEM), and high-resolution transmission electron microscopy. Using both AFM and XRT, the [001] direction was observed to be the most prevalent crack direction; however, cracks were also observed in the [100] direction. In uncracked regions of the films, XRT revealed the alignment of threading dislocations along the [001] direction. Cross-sectional imaging of the crack geometry and propagation was performed using BF-STEM, and it was observed that the cracks in the [001] direction extended through the thickness of the β-(AlxGa1−x)2O3 film (∼205 nm) and a further ∼100–200 nm into the β-Ga2O3 substrate. Experimental data for critical film thickness showed good agreement with previous theoretical calculations based on the Griffith criterion for crack propagation. [ABSTRACT FROM AUTHOR]

Defect origins and their propagation behavior were investigated in 25 μm thick homo-epitaxial GaN layers grown on ammono-thermal and void-assisted separation (VAS) substrates using multi-vector x-ray topography in both transmission and reflection geometries. Complex inclusions were identified and their microstructure was analyzed. Additionally, generation of threading dislocation clusters during epitaxial growth is analyzed. Various defects are delineated from the substrate vs epitaxial layers. Growth on the ammono-thermal substrate led to less defective and flatter epitaxial layers compared to the growth on the VAS substrate. Determining the origins and microstructure of defects is crucial toward developing defect mitigation strategies for reliable GaN devices. [ABSTRACT FROM AUTHOR]

An ultrafast microwave annealing method that is different from conventional thermal annealing is used for activating Mg-implants in GaN layer. The in-diffusion and out-diffusion of the Be is increased with increasing annealing temperature and only a small fraction of in situ doped Be has remained in the GaN layer, indicating the inadequateness of using Be-implantation for forming p-type doped layers in the GaN.

Threading and basal dislocations were observed and their Burgers vectors ( b → ) were analyzed in 20 µm thick halide vapor phase homoepitaxially grown beta-gallium oxide (β−Ga2O3) films using 15 keV monochromatic synchrotron X-ray topography with symmetric reflection (004) and two asymmetric reflections (205) and (115) in back-reflection and grazing incidence angle geometries, respectively. In a 1 × 1.5 cm2 sample, threading screw dislocations with b → = 001 were observed with a density of 30 cm−2, whereas a single threading edge dislocation with b → = 100 was observed. Basal dislocations with b → = 1 2 112 were observed with a density of ∼20 cm−2, and a single basal dislocation with b → = 010 was observed. Rocking curve mapping of the three reflections was also performed on the entire sample with the same setup and a high resolution x-ray camera to obtain the full width at half maximum (FWHM), strain, and curvature maps in two almost orthogonal directions. The epilayer demonstrated excellent crystalline quality with a median FWHM of 8.2 arc sec in the (004) reflection and a very low median strain of ∼|8 × 10−5| obtained from both sample directions. The median radius of curvature was ∼−100 m along the [100] direction and ∼280 m along the [010] sample axis, indicating very low lattice plane curvature that enables high manufacturability and reliability of devices. [ABSTRACT FROM AUTHOR]