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104 results on '"Mahon, Simon J."'

5. 120 GHz microstrip power amplifier MMICs in a commercial GaAs process.

Author

Mahon, Simon J., McCulloch, MacCrae G., Mihaljevic, Jakov, Gorman, Melissa C., Parker, Anthony E., and Heimlich, Michael C.

Abstract

Single-ended and balanced 90–120 GHz microstrip power amplifier MMICs have been designed for cost-sensitive 5G and 6G backhaul in a commercial 6-inch, 0.1-µm GaAs process. At 108 GHz, measured output power is 20.4 and 22.5 dBm, respectively. At 120 GHz, measured output is 12.6 and 17.4 dBm, respectively. This is the highest reported for GaAs, among the highest reported to date for microstrip MMIC amplifiers at these frequencies and competitive with more expensive InP and GaN processes. Measurement is compared with simulation. [ABSTRACT FROM AUTHOR]

Published
2024
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23. Broadband integrated millimeter-wave up- and down-converter GaAs MMICs

Author

Mahon, Simon J., Convert, Emmanuelle, Beasly, Paul T., Bessemoulin, Alexandre, Dadello, Anna, Costantini, Alberto, Fattorini, Anthony, McCulloch, MacCrae G., Lawrence, Bernard G., and Harvey, James T.

Subjects
Gallium arsenide -- Electric properties, Microwave integrated circuits -- Design and construction, Circuit design -- Analysis, Circuit designer, Integrated circuit design, Business, Computers, Electronics, Electronics and electrical industries
Abstract

The architecture and design of broadband, highly integrated up- and down-converters in GaAs pHEMT technology is described. Two up-converters and two down-converters have been designed to reduce the complexity and cost of broadband millimeter-wave systems by integrating a number of functions into compact MMICs. Broadband performance was achieved for approximately 17-35 GHz (low band) and 30-45 GHz (high band) with up-conversion input-referred, third-order intercept point exceeding 12 and 10 dBm, respectively, with good 2x local oscillator leakage and excellent gain control. To the best of the authors' knowledge, this is the highest level of integration achieved for up- and down-converters at these frequencies. Index Terms--High electron-mobility transistors (HEMTs), monolithic microwave integrated circuits (MMICs), receivers, transmitters.

Published
2006

25. Modelling drain and gate dependence of HEMT 1-50 GHz, small-signal S-parameters, and D.C. drain current

Author

Mahon, Simon J. and Skellern, David J.

Subjects
Gates (Electronics) -- Research, High-electron-mobility transistors -- Research, Business, Computers, Electronics, Electronics and electrical industries
Abstract

We present refinements to a previously validated HEMT model that improves the model's accuracy as a function of drain bias for simulating d.c. drain current and 1-50 GHz, small-signal S-parameters. By comparing simulation data with experimental data for a 0.4-[[micro]meter]-gate pseudomorphic HEMT, we have been able to establish the accuracy of the refined model, which predicts the device's d.c. current and S-parameters as a function of the applied drain and gate biases to within an accuracy of [approximately] 5%. The core of the model and, in particular, its bias dependence, are directly dependent on the HEMT wafer structure and the physical gate length.

Published
1995

26. A technique for modelling S-parameters for HEMT structures as a function of gate bias

Author

Mahon, Simon J., Skellern, David J., and Green, Frederick

Subjects
High-electron-mobility transistors -- Research, Computer simulation -- Research, Scattering (Physics) -- Research, Business, Computers, Electronics, Electronics and electrical industries
Abstract

A physically based technique for modelling HEMT structure S-parameters is presented. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. The model accurately predicts the device's S-parameters as a function of the applied gate bias. The physical basis facilitates the modelling of different types of HEMT structures. In this paper we present measured S-parameters and simulation results, over a frequency range of 1 to 25 GHz, for three different HEMT structures: uniformly-doped, GaAs-channel; pulse-doped, GaAs-channel; and uniformly-doped, strained-InGaAs-channel.

Published
1992

30. Simulation of HEMT DC drain current and 1 to 50 GHz s-parameters as a function of gate bias

Author

Mahon, Simon J., Chivers, Michael J., and Skellern, David J.

Subjects
High-electron-mobility transistors -- Research, Electric circuits -- Direct current, Gate arrays -- Research, Semiconductor wafers -- Analysis, Business, Computers, Electronics, Electronics and electrical industries
Abstract

The usefulness over an extended range of a HEMT model previously validated for 1 to 25 GHz s-parameter model is shown. Experimental and simulation results for the dc drain current and 1-50 GHz s-parameters of a pseudomorphic 0.32-micrometer-gate AlGaAs/InGaAs/GaAs HEMT are presented. The model predicts the device's dc current and s-parameters as a function of the applied gate bias with good accuracy. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. As part of the modeling procedure, a value of (1.77 + or - 0.07) X 10 to the fifth power m center dot s to the -1 is found, confirming the results of other research, for the electron velocity in undoped pseudomorphic In0.15Ga0.85As under approximately or equal to 0.3 micrometer gates.

Published
1993

32. Wide-Band MMIC Kowari Mixer/Phase Shifters

Author

Mahon, Simon J., Harvey, James T., and Young, Alan C.

Subjects
Microwave integrated circuits -- Testing, Diodes -- Testing, Business, Computers, Electronics, Electronics and electrical industries
Abstract

A series of wide-band image-reject monolithic-microwave integrated-circuit mixer/phase shifters were designed, fabricated, and tested for operation in the microwave and millimeter-wave bands. Mixers based on diode and resistive-high electron-mobility transistor (HEMT) nonlinear elements are presented and compared in this paper. The diode-based Kowari (we christened our modified 'rat-race' mixer 'Kowari' after the common name of the small and somewhat rat-like carnivorous brush-tailed marsupial mouse, Dasyuroides byrnei, which inhabits the arid regions of central Australia) mixers have a bandwidth of approximately 45%, with up- and down-conversion loss [RF to/from IF (in this paper, we use 'IF,' 'LO,' and 'RF' to label the ports associated with particular signals, not necessarily to describe the nature of the signals themselves)] less than 10 dB and up-conversion output power greater than 0 dBm. At band center, the down-conversion loss is approximately 7 dB. The novel resistive-HEMT-based Kowari mixers have a measured IF-to-RF up-conversion loss of approximately 2 dB and LO-to-RF conversion loss of approximately 13 dB over 17-25.5 GHz. While both circuit types realize wide-band 360 [degrees] phase shifters when appropriate control voltages are applied, the resistive-HEMT-based Kowari has better linearity and a smaller insertion loss. Index Terms--Diode, GaAs, HEMT, mixer, MMIC.

Published
2001

35. A 25 to 45 GHz SiGe receiver MMIC

Author

Milner, Leigh E., primary, Harvey, James T., additional, Parker, Michael E., additional, Hall, Leonard T., additional, Rodriguez, Melissa C., additional, Heimlich, Michael C., additional, and Mahon, Simon J., additional

Published
2016
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40. Direct Down-Conversion 38 GHz GaAs and SiGe Receivers

Author

Clement, Ryan M., primary, Milner, Leigh E., additional, Convert, Emmanuelle R., additional, Hall, Leonard, additional, Parker, Michael, additional, McCulloch, MacCrae G., additional, Dadello, Anna, additional, Wu, Benny, additional, Harvey, James T., additional, Parker, Anthony E., additional, and Mahon, Simon J., additional

Published
2014
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48. GaAs E Band Radio Chip-Set

Author

Tarazi, Jabra, primary, Rodriguez, Melissa C., additional, Dadello, Anna, additional, McCulloch, MacCrae G., additional, Fattorini, Anthony P., additional, Hwang, Steve, additional, Clement, Ryan, additional, Parker, Anthony E., additional, Harvey, James T., additional, and Mahon, Simon J., additional

Published
2013
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