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Your search keyword '"Malherbe, J. B."' showing total 88 results
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88 results on '"Malherbe, J. B."'

4. Effect of Ar+ ion bombardment on the electrical characteristics of Al/n-Si contacts.

Author

Carr, B. A., Friedland, E., and Malherbe, J. B.

Subjects
ALUMINUM, SILICON, ION implantation, ARGON
Abstract

Presents a study which investigated the electrical characteristics of aluminum-silicon contacts before and after argon ion implantation. Damage caused by implantation to silicon; Use of the application of ion implantation through the aluminum-silicon interface; Results and discussion.

Published
1987
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8. Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region

Author

Kuhudzai, R J, Malherbe, J B, van der Berg, N G, Hlatshwayo, T T, Odutemowoa, O, Prinsloo, Linda C, Buys, A V, Erasmus, R, Wendler, E, Kuhudzai, R J, Malherbe, J B, van der Berg, N G, Hlatshwayo, T T, Odutemowoa, O, Prinsloo, Linda C, Buys, A V, Erasmus, R, and Wendler, E

Abstract

The recystallisation behaviour and thermal decomposition of the near surface amorphised region of 6H-SiC have been investigated by Raman spectroscopy. 360 keV ions of iodine and silver were implanted at room temperature into wafers of 6H-SiC resulting in the amorphisation of the near surface region. Vacuum annealing of the samples was performed at 1200 °C for 5 h and then sequentially from 1200 to 1600 °C in steps of 100 °C for 30 h at each annealing temperature. Raman spectroscopy was performed using two laser wavelength excitation regimes, the 514 nm laser (visible region) and the 244 nm laser (deep ultraviolet region, DUV). Measurements in the visible region for samples annealed at 1200 °C for 5 h showed that the characteristic 6H-SiC peaks, namely, the Transverse Optical (TO) and Longitudinal Optical (LO) are similar to the virgin samples, albeit with lower intensity due to some retained defects upon recystallisation of the SiC surface region. The similarities between the virgin spectra and the annealed sample were due to the deep penetration of the 514 nm laser into 6H-SiC resulting in the signal from the bulk undamaged 6H-SiC contributing to the overall spectra. However, DUV laser excitation, which only probes the near surface region, shows that after annealing the peaks are broader and asymmetrical compared to the virgin samples. DUV Raman spectra of samples annealed at 1600 °C indicate that SiC has completely decomposed and the top surface layer is now covered by a carbon layer. However the deeper penetrating laser in the visible region showed that the extent of decomposition at 1600 °C was greater for the silver implanted samples than for the iodine implanted samples.

Published
2015

10. The effect of Ar+ ion implantation on the electrical characteristics of Cr/P-Si Schottky diodes.

Author

Malherbe, J. B., de Witt, B., and Berning, G. L. P.

Subjects
*ION implantation, *CHROMIUM, *SILICON, *SCHOTTKY barrier diodes
Abstract

Examines the effect of argon[sup+] ion implantation on the electrical characteristics of chromium/p-type silicon Schottky diodes. Significance of high-energy ion implantation of metal-silicon systems; Characteristics for some typical diodes before and after implantation at the indicated dose densities; Schottky parameters at different ion dose densities.

Published
1992
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11. Effect of annealing on the Schottky barrier height of Al/n-Si Schottky diodes after Ar+ ion bombardment.

Author

Carr, B. A., Friedland, E., and Malherbe, J. B.

Subjects
HEATING, SCHOTTKY barrier diodes, SILICON diodes, ALUMINUM
Abstract

Presents a study that examined the effect of annealing on the voltage-current characteristics of the Schottky contacts of an aluminum/n-silicon Schottky diodes after argon[sup+] ion bombardment. Methodology; Effect of annealing on the Schottky barrier height; Analysis of the depth profile of the annealed contact.

Published
1988
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12. Annealing of silver implanted 6H-SiC and the diffusion of the silver

Author

Hlatshwayo, T T, Malherbe, J B, van der Berg, N G, Prinsloo, Linda C, Botha, A J, Wendler, E, Wesch, W, Hlatshwayo, T T, Malherbe, J B, van der Berg, N G, Prinsloo, Linda C, Botha, A J, Wendler, E, and Wesch, W

Abstract

Annealing and diffusion behavior of implanted silver in 6H-SiC has been investigated using Rutherford backscattering spectroscopy (RBS), channeling, Raman spectroscopy and scanning electron microscopy (SEM) techniques. Silver ( 109Ag +) ions with an energy of 360 keV were implanted in SiC to a fluence of 2 x 10 16 cm -2 at room temperature (23 °C), 350 and 600 °C. After implantation the samples were annealed at temperatures up to 1400 °C. The results revealed that implantation at room temperature created an amorphous layer of about 270 nm from the surface while implantation at 350 and 600 °C retained a crystalline structure with more damage created for 350 °C implantation compared to 600 °C. Diffusion of implanted Ag accompanied by loss from the surface started at 1300 °C in the amorphous SiC with no diffusion observed in the crystalline SiC. A new model explaining this diffusion of silver accompanied silver loss is presented.

Published
2012

16. Pulsed electron beam annealing: A tool for post-implantation damage control in SiC

Author

Brink, D. J., Kunert, H. W., Malherbe, J. B., Camassel, J., Brink, D. J., Kunert, H. W., Malherbe, J. B., and Camassel, J.

Abstract

The possibility of reversing ion implantation damage in SiC using pulsed electron beam annealing is investigated. Using Raman spectroscopy, photo luminescence and infrared reflectance it is shown that good recovery can be obtained for an electron-energy fluence of 1.1 J cm-2.

Published
2006
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33. Optical characterization of bulk GaN silicon and magnesium doped: as grown, hydrogen implanted, and annealed

Author

Kunert, H. W., Dale, D., Prinsloo, L. C., Hayes, M., Barnas, J., Malherbe, J. B., Brink, D. J., Machatine, A. I., and Haile, K. M.

Abstract

Two samples, GaN silicon-doped and GaN magnesium-doped, were hydrogen implanted and annealed. The low temperature photoluminescence and inelastic light scattering spectroscopy were employed to investigate structural changes as well as the changes in optical electronic transitions.

Published
2004
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39. Deep radiation damage in copper after ion implantation

Author

Friedland, E., Roux, H. Le, and Malherbe, J. B.

Abstract

Copper single crystals were implanted off-axis at room temperature with carbon, neon, argon and xenon ions having energies ranging from 50 to 150 keV. Deep radiation damage was observed by α-particle channelling in a backscattering geometry. The total damage range was found to depend primarily on the ion energy, whereas the influence of the atomic number of the ion was significant only with xenon.

Published
1986
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40. Projected range and straggling measurements of low energy nitrogen in silicon

Author

Malherbe, J. B.

Abstract

The projected ranges and straggling of 0.25 to 2.5 keV nitrogen atoms in silicon were determined by means of Auger electron spectroscopy combined with argon sputter depth profiling. The results show excellent correspondence with experimental measurements of other ions in silicon. However a considerable discrepancy exists between various theoretical predictions and the measured projected ranges. This discrepancy is attributed to inaccuracies in the theories in the low energy region.

Published
1983
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41. Energy loss and straggling of p, d and alpha-particles in Au in the energy region 0.2 to 2.4 MeV

Author

Alberts, H. W. and Malherbe, J. B.

Abstract

Energy loss and straggling for protons, deuterons and α-particles in thin gold foils were measured by the indirect transmission technique. The measured stopping powers of the hydrogen ions agree reasonably well with the semi-empirical values of Andersen and Ziegler. The measured stopping powers for the helium ions are between 4% and 12% higher than the semi-empirical values of Ziegler. Stopping ratios of the He and hydrogen ions for the same target foils are slightly higher than Ziegler's master curve. The straggling values are energy independent above 0.4 MeV/amu. The hydrogen values are about 20 % lower than the Bohr estimate, while the straggling of the helium ions tend to reach the Bohr value at energies above 0.4 MeV/amu.

Published
1983
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42. Defect characterization of n-type Si1−xGexafter 1.0 kev helium-ion etching

Author

Goodman, S. A., Auret, F. D., Nauka, K., and Malherbe, J. B.

Abstract

SiGe heterostructures with their associated geometries and properties promise a novel generation of Si-based devices. Surface processing and, in particular, dry or plasma etching of semiconductors is a key technology for producing optoelectronic integrated circuits and high speed electronic devices. We have used deep-level transient spectroscopy (DLTS) in an investigation of the electronic properties of defects introduced in n-Si 1−xGex(x = 0.00 to 0.25) during 1 keV helium-ion etching (fluence = 1 × 1012cm²) prior to the deposition of gold Schottky barrier diodes (SBDs). Six electron defects (EHel-EHe6) were detected after this processing stage. The defects detected after etching are compared to those introduced by 5.4 MeV alpha-particle (α-) irradiation and, also, radio frequency (rf) sputter-deposition of Au SBDs on material from the same wafer. Four of the electron defects (EHel, EHe2, EHe4, and EHe6) are detected in Si. The remaining two defects (EHe3 and EHe5) are only detected in material containing germanium. It was noted that defects introduced during the He-ion etch process have the same DLTS “signatures” as defects after the sputter deposition process, but none were the same as those introduced during the α-particle irradiation. The influence of increased Ge content on DLTS peak shape and positions is also illustrated and discussed.

Published
1997
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43. Deep radiation damage in copper after ion implantation.

Author

Friedland, E., Le Roux, H., and Malherbe, J. B.

Abstract

Copper single crystals were implanted off-axis at room temperature with carbon, neon, argon and xenon ions having energies ranging from 50 to 150 keV. Deep radiation damage was observed by α-particle channelling in a backscattering geometry. The total damage range was found to depend primarily on the ion energy, whereas the influence of the atomic number of the ion was significant only with xenon. [ABSTRACT FROM PUBLISHER]

Published
1985
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