Search

In the modular superconducting quantum processor architecture, high-fidelity, meter-scale microwave interconnect between processor modules is a key technology for extending system size beyond constraints imposed by device manufacturing equipment, yield, and signal delivery. While there have been many demonstrations of remote state transfer between modules, these relied on tomographic experiments for benchmarking, but this technique does not reliably separate State Preparation And Measurement (SPAM) error from error per state transfer. Recent developments based on randomized benchmarking provide a compatible theory for separating these two errors. In this work, we present a module-to-module interconnect based on Tunable-Coupling Qubits (TCQs) and benchmark, in a SPAM error tolerant manner, a remote state transfer fidelity of 0.988 across a 60cm long coplanar waveguide (CPW). The state transfer is implemented via superadiabatic transitionless driving method, which suppresses intermediate excitation in internal modes of CPW. We also introduce the frame tracking technique to correct unintended qubit phase rotations before and after the state transfers, which enables the SPAM-error-tolerant benchmarking of the state transfers. We further propose and construct a remote CNOT gate between modules, composed of local CZ gates in each module and remote state transfers, and report a high gate fidelity of 0.933 using randomized benchmarking method. The remote CNOT construction and benchmarking we present is a more complete metric that fully characterizes the module to module link operation going forward as it more closely represents interconnect operation in a circuit.

The research focuses on the explanation of a phenomenon observed in the spectra of electron nuclear resonance (ENDOR) pertaining to nitrogen atoms adjacent to the boron vacancy (VB) defect in hexagonal boron nitride (hBN). The phenomenon is manifested as a shift of the ENDOR spectrum lines with respect to the nitrogen Larmor frequency. It is hypothesized that these shifts are indicative of a substantial hyperfine interaction between the VB defect and the 14N nuclei in hBN. A calculation utilizing second-order perturbation theory was executed to determine the positions of the ENDOR spectrum lines, resulting in the formulation of correction equations. The values obtained from the perturbation theory corrections align well with the experimental results. The extent of nuclear state admixture into electron states was found to be around 0.04-0.07%.

High-spin defect centers in crystal matrices are used in quantum computing technologies, highly sensitive sensors, and single-photon sources. In this work, optically active nitrogen-vacancy color centers NV in a 28Si-enriched (nuclear spin I = 0) 6H-28SiC crystal have been studied using the photoinduced (980 nm) high-frequency (94 GHz, 3.4 T) pulsed electron paramagnetic resonance method at a temperature of 150 K. Three structurally nonequivalent types of NV- centers with axial symmetry have been identified and their spectroscopic parameters have been determined. Long spin-lattice, T1=1.3 ms, and spin-spin, T2=59 us, ensemble relaxation times of NV- centers with extremely narrow (450 kHz) absorption lines allow highly selective excitation of resonant transitions between sublevels caused by the weak hyperfine interaction (A = 1 MHz) with 14N (I = 1) nuclei for the quantum manipulation of the electron spin magnetization.

The nitrogen-vacancy (NV) centers (NCVSi) - in 4H silicon carbide (SiC) constitute an ensemble of spin S = 1 solid state qubits interacting with the surrounding 14N and 29Si nuclei. As quantum applications based on a polarization transfer from the electron spin to the nuclei require the knowledge of the electron-nuclear interaction parameters, we have used high-frequency (94 GHz) electron-nuclear double resonance spectroscopy combined with first-principles density functional theory to investigate the hyperfine and nuclear quadrupole interactions of the basal and axial NV centers. We observed that the four inequivalent NV configurations (hk, kh, hh, and kk) exhibit different electron-nuclear interaction parameters, suggesting that each NV center may act as a separate optically addressable qubit. Finally, we rationalized the observed differences in terms of distinctions in the local atomic structures of the NV configurations. Thus, our results provide the basic knowledge for an extension of quantum protocols involving the 14N nuclear spin., Comment: 9 pages, 7 figures

Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gap E_g = 6 eV, containing a negatively charged boron vacancy (V_B^-) with unique spin, optical, and coherent properties presents a new two-dimensional platform for the implementation of quantum technologies. This work establishes the value of V_B^ - spin polarization under optical pumping with {\lambda}ext = 532 nm laser using high-frequency ({\nu}mw = 94 GHz) electron paramagnetic resonance (EPR) spectroscopy. In optimal conditions polarization was found to be P = 38.4 %. Our study reveals that Rabi oscillations induced on polarized spin states persist for up to 30-40 microseconds, which is nearly two orders of magnitude longer than what was previously reported. Analysis of the coherent electron-nuclear interaction through the observed electron spin echo envelope modulation (ESEEM) made it possible to detect signals from remote nitrogen and boron nuclei, and to establish a corresponding quadrupole coupling constant Cq = 180 kHz related to nuclear quadrupole moment of 14N. These results have fundamental importance for understanding spin properties of boron vacancy.

The concept of optically addressable spin states of deep level defects in wide band gap materials is successfully applied for the development of quantum technologies. Recently discovered negatively charged boron vacancy defects (VB) in hexagonal boron nitride (hBN) potentially allow a transfer of this concept onto atomic thin layers due to the van der Waals nature of the defect host. Here, we experimentally explore all terms of the VB spin Hamiltonian reflecting interactions with the three nearest nitrogen atoms by means of conventional electron spin resonance and high frequency (94 GHz) electron-nuclear double resonance. We establish symmetry, anisotropy, and principal values of the corresponding hyperfine interaction (HFI) and nuclear quadrupole interaction (NQI). The HFI can be expressed in the axially symmetric form as Aperp = 45.5 MHz and Apar = 87 MHz, while the NQI is characterized by quadrupole coupling constant Cq = 1.96 MHz with slight rhombisity parameter n = (Pxx - Pyy)/Pzz = -0.070. Utilizing a conventional approach based on a linear combination of atomic orbitals and HFI values measured here, we reveal that almost all spin density (84 %) of the VB electron spin is localized on the three nearest nitrogen atoms. Our findings serve as valuable spectroscopic data and direct experimental demonstration of the VB spin localization in a single two dimensional BN layer.

By means of ab initio calculations within the density functional theory (DFT) electronic and magnetic properties of BaTiO3/LaMnO3 interface were investigated. An impact of ferroelectric overlayer thickness onto the interface properties was analysed through the spin-polarized density of states., Comment: arXiv admin note: substantial text overlap with arXiv:2201.09224

By means of ab initio calculations the possibilities of switchable spin-polarized two-dimensional electron gas (2DEG) at the interface of antiferromagnetic and ferroelectric perovskites, i.e., LaMnO3/BaTiO3 superlattice, were investigated. We demonstrate that at the heterostructure with TiO2/LaO interfacial layers the two-dimensional conducting state arises mainly localized within the interfacial MnO layer. The density of states at the Fermi-level can be tuned by ferroelectric polarization reversal. The conducting state coexists with magnetic one mainly arose from Mn atoms.

Coherent coupling of defect spins with surrounding nuclei along with the endowment to read out the latter, are basic requirements for an application in quantum technologies. We show that negatively charged boron vacancies (VB-) in electron-irradiated hexagonal boron nitride (hBN) meet these prerequisites. We demonstrate Hahn-echo coherence of the VB- electron spin with a characteristic decay time Tcoh = 15 us, close to the theoretically predicted limit of 18 us for spin defects in hBN. Modulation in the MHz range superimposed on the Hahn-echo decay curve are shown to be induced by coherent coupling of the VB- spin with the three nearest 14N nuclei through a nuclear quadrupole interaction of 2.11 MHz. Supporting DFT calculation confirm that the electron-nuclear coupling is confined to the defective layer. Our findings allow an in-depth understanding of the electron-nuclear interactions of the VB- defect in hBN and demonstrate its strong potential in quantum technologies.

We have demonstrated a novel type of superconducting transmon qubit in which a Josephson junction has been engineered to act as its own parallel shunt capacitor. This merged-element transmon (MET) potentially offers a smaller footprint and simpler fabrication than conventional transmons. Because it concentrates the electromagnetic energy inside the junction, it reduces relative electric field participation from other interfaces. By combining micrometer-scale Al/AlOx/Al junctions with long oxidations and novel processing, we have produced functional devices with $E_{J}$/$E_{C}$ in the low transmon regime ($E_{J}$/$E_{C}$ $\lesssim$30). Cryogenic I-V measurements show sharp dI/dV structure with low sub-gap conduction. Qubit spectroscopy of tunable versions show a small number of avoided level crossings, suggesting the presence of two-level systems (TLS). We have observed mean T1 times typically in the range of 10-90 microseconds, with some annealed devices exhibiting T1 > 100 microseconds over several hours. The results suggest that energy relaxation in conventional, small-junction transmons is not limited by junction loss., Comment: 7 pages, 4 figures Added references Performed minor editing for clarity Made minor formatting changes to figures

In this work we prove that for any dimension $d\geq 1$ and any $\gamma \in (0,1)$ super-Brownian motion corresponding to the log-Laplace equation \begin{equation*} \begin{split} \frac{\partial v(t,x)}{\partial t } & = \frac{1}{2}\bigtriangleup v(t,x) + v^\gamma (t,x) ,\: (t,x) \in \mathbb{R}_+\times \mathbb{R}^d,\\ v(0,x)&= f(x) \end{split} \end{equation*} is absolutely continuous with respect to the Lebesgue measure at any fixed time $t>0$. Our proof is based on properties of solutions of the \LL\ equation. We also prove that when initial datum $v(0,\cdot)$ is a finite, non-zero measure, then the \LL\ equation has a unique, continuous solution. Moreover this solution continuously depends on initial data.

The effect of green and ultraviolet laser light on Ba$_{0.8}$Sr$_{0.2}$TiO$_3$/LaMnO$_3$ heterostructure electrical resistance was studied. In 80-200 K range illumination induces transient resistance component at ~15% of the steady-state value, the time constant associated with the transient component is ~12 s. The negative photoresistance effect is found under green, infrared and ultraviolet illumination., Comment: 14 pages, 3 figures

We have studied transport and magnetotransport properties of the heterostructure consisting of the ferroelectric Ba$_{0.8}$Sr$_{0.2}$TiO$_3$ film deposited on the single crystalline manganite LaMnO$_3$. Two-dimensional electron gas arising at the interface transforms the interface region of the antiferromagnetic manganite to the ferromagnetic state with the reoriented magnetic moments. We obtained that the contribution of these ferromagnetic regions to the resistance of the heterostructure appears to be dependent on the external magnetic field applied perpendicularly to the interface (and parallel to {\it c}-axis of the ferromagnetic state of LaMnO$_3$). We believe that the decrease of the resistance of the studied heterostructure under the influence of the external magnetic field is caused by an appearance of the ferromagnetic order in the interface area. This leads to a relatively small resistance. In turn, the cycling of the applied magnetic field leads to the increase of the regions of the ferromagnetic order and, as a result, to decreasing scattering of the current carriers at the ferromagnetic disordering.

Porous silica materials offer wide range of possibilities for enhancement of the productivity of oil reservoirs. However the mechanism of adsorption of polar components of crude oil on silica surface is poorly understood that hinders technological improvement of supports and oil extraction. We have synthesized opal films with the silica microspheres size of about 360 nm, specific surface area of 5.2 m2/g and pore size of 230 nm. We have fractionated and characterized oil and oil asphaltenes from heavy (Ashalchinskoe) oil. By pulsed electron paramagnetic resonance (EPR) and double electron nuclear resonance (ENDOR) in the W band frequency range (microwave frequency of 94 GHz, magnetic field of 3.4 T) we have studied the adsorption of oil asphaltenes on the surface of opal samples using the intrinsic for asphaltenes paramagnetic vanadylporphyrins (VO) complexes. 1H ENDOR spectra are found to be different for initial and the adsorbed samples in their central parts (that is a sign of asphaltenes VO disaggregation) whereas no significant changes in the W band EPR spectra were detected. Contrasting to alumina support, no strong electron proton interaction with the protons on the surface of SiO2 (presumably, silanol groups) was found and infiltration of the oiled opal films with gasoline changes the central part of 1H ENDOR spectra. It shows that the proton containing groups on the surface of amorphous SiO2 sample can significantly change the asphaltene adsorption properties and ENDOR of the intrinsic for oil paramagnetic centers could be used for the characterization of surface state in porous media in situ or operando., Comment: 7 pages, 5 figures, 43 references