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Your search keyword '"Manavizadeh, Negin"' showing total 109 results
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109 results on '"Manavizadeh, Negin"'

8. Evaluation of Energy Harvesting from Different Sections of the Aortic Artery with Several Energy Harvester Materials.

Author

Nasiri Sadr, Arsalan, Nasri, Farnaz, Pourfarzad, Hamed, Manavizadeh, Negin, Pedram, Mona Zamani, and Naikoo, Gowhar Ahmad

Subjects
NANOGENERATORS, COMPUTATIONAL fluid dynamics, THORACIC aorta, ENERGY harvesting, BLOOD flow
Abstract

With the development of implants and microdevices used in the human body, supplying the energy of these devices is a challenge. One of the safest ways to overcome the challenge is to harvest the energy from the human body. In this study, the blood flow, wall deformation, and hemodynamic parameters of the aortic artery are evaluated based on computational fluid dynamics (CFD). Also, the artery displacement is linked to the output voltage by using Gauss' law. The results show that for the artery under study, the proximal descending thoracic aorta (PDTA) is the best place to harvest energy, although there is the highest blood pressure on the ascending aorta (AAo) and the highest wall displacement is in the aortic arch. Part of this result depends on the morphology of the existing aortic artery. Also, the piezoelectric model of PZT‐5H harvests the most energy and polyvinylidene fluoride (PVDF) has the least, which can harvest power density of 1.34 and 1.27 × 10−3(μW/mm3) respectively. [ABSTRACT FROM AUTHOR]

Published
2024
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45. An innovative ion sensitive device based on side-contacted field effect diode.

Author

Mohammadi, Ehsan and Manavizadeh, Negin

Subjects
*FIELD-effect transistors, *DIODES, *SOLUTION (Chemistry), *THICKNESS measurement, *SILICON, *DOPING agents (Chemistry)
Abstract

In this paper, side-contacted field effect diode as an ion sensitive device is proposed to take advantages of field effect diodes family in sensing ionic species in solutions. To analyze the behavior of ion sensitive side-contacted field effect diode, an accurate model has been developed in a simulation environment tool to mimic the characteristics of the solution and the results compared with the literature. While dual gate ion sensitive FETs have been introduced to beat the Nernst limit, results show that dual gate ion sensitive side-contacted field effect diodes can provide better performance. Effects of various parameters such as silicon body thickness and doping concentration have been studied. In contrast of ISFETs, the proposed device offers more sensitivity at the thicker silicon body. Results indicate that dual gate ion sensitive side-contacted field effect diodes can be regarded as an interesting candidate for bio-sensing applications. [ABSTRACT FROM AUTHOR]

Published
2017
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