1. Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe4GeTe2 far above room temperature
- Author
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Wang, Hangtian, Lu, Haichang, Guo, Zongxia, Li, Ang, Wu, Peichen, Li, Jing, Xie, Weiran, Sun, Zhimei, Li, Peng, Damas, Héloïse, Friedel, Anna Maria, Migot, Sylvie, Ghanbaja, Jaafar, Moreau, Luc, Fagot-Revurat, Yannick, Petit-Watelot, Sébastien, Hauet, Thomas, Robertson, John, Mangin, Stéphane, Zhao, Weisheng, Nie, Tianxiao, Wang, Hangtian [0000-0003-2844-8635], Lu, Haichang [0000-0002-5831-2061], Li, Peng [0000-0001-8491-0199], Friedel, Anna Maria [0000-0002-7523-0375], Petit-Watelot, Sébastien [0000-0002-0697-8929], Hauet, Thomas [0000-0001-5637-0690], Mangin, Stéphane [0000-0001-6046-0437], Zhao, Weisheng [0000-0001-8088-0404], Nie, Tianxiao [0000-0001-9067-9931], and Apollo - University of Cambridge Repository
- Abstract
Despite recent advances in exfoliated vdW ferromagnets, the widespread application of 2D magnetism requires a Curie temperature (Tc) above room temperature as well as a stable and controllable magnetic anisotropy. Here we demonstrate a large-scale iron-based vdW material Fe4GeTe2 with the Tc reaching ~530 K. We confirmed the high-temperature ferromagnetism by multiple characterizations. Theoretical calculations suggested that the interface-induced right shift of the localized states for unpaired Fe d electrons is the reason for the enhanced Tc, which was confirmed by ultraviolet photoelectron spectroscopy. Moreover, by precisely tailoring Fe concentration we achieved arbitrary control of magnetic anisotropy between out-of-plane and in-plane without inducing any phase disorders. Our finding sheds light on the high potential of Fe4GeTe2 in spintronics, which may open opportunities for room-temperature application of all-vdW spintronic devices.
- Published
- 2023