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Photoelectrochemical fuel generation is a promising route to sustainable liquid fuels produced from water and captured carbon dioxide with sunlight as the energy input. Development of these technologies requires photoelectrode materials that are both photocatalytically active and operationally stable in harsh oxidative and/or reductive electrochemical environments. Such photocatalysts can be discovered based on co-design principles, wherein design for stability is based on the propensity for the photocatalyst to self-passivate under operating conditions and design for photoactivity is based on the ability to integrate the photocatalyst with established semiconductor substrates. Here, we report on the synthesis and characterization of zinc titanium nitride (ZnTiN2) that follows these design rules by having a wurtzite-derived crystal structure and showing self-passivating surface oxides created by electrochemical polarization. The sputtered ZnTiN2 thin films have optical absorption onsets below 2 eV and n-type electrical conduction of 3 S/cm. The band gap of this material is reduced from the 3.36 eV theoretical value by cation-site disorder, and the impact of cation antisites on the band structure of ZnTiN2 is explored using density functional theory. Under electrochemical polarization, the ZnTiN2 surfaces have TiO2- or ZnO-like character, consistent with Materials Project Pourbaix calculations predicting the formation of stable solid phases under near-neutral pH. These results show that ZnTiN2 is a promising candidate for photoelectrochemical liquid fuel generation and demonstrate a new materials design approach to other photoelectrodes with self-passivating native operational surface chemistry.

Hydrothermal synthesis is challenging in metal oxide systems with diverse polymorphism, as reaction products are often sensitive to subtle variations in synthesis parameters. This sensitivity is rooted in the non-equilibrium nature of low-temperature crystallization, where competition between different metastable phases can lead to complex multistage crystallization pathways. Here, we propose an ab initio framework to predict how particle size and solution composition influence polymorph stability during nucleation and growth. We validate this framework using in situ X-ray scattering, by monitoring how the hydrothermal synthesis of MnO2 proceeds through different crystallization pathways under varying solution potassium ion concentrations ([K+] = 0, 0.2, and 0.33 M). We find that our computed size-dependent phase diagrams qualitatively capture which metastable polymorphs appear, the order of their appearance, and their relative lifetimes. Our combined computational and experimental approach offers a rational and systematic paradigm for the aqueous synthesis of target metal oxides.

Many technologically critical materials are metastable under ambient conditions, yet the understanding of how to rationally design and guide the synthesis of these materials is limited. This work presents an integrated approach that targets a metastable lead-free piezoelectric polymorph of SrHfO3 . First-principles calculations predict that the previous experimentally unrealized, metastable P4mm phase of SrHfO3 should exhibit a direct piezoelectric response (d33 ) of 36.9 pC N-1 (compared to d33 = 0 for the ground state). Combining computationally optimized substrate selection and synthesis conditions lead to the epitaxial stabilization of the polar P4mm phase of SrHfO3 on SrTiO3 . The films are structurally consistent with the theory predictions. A ferroelectric-induced large signal effective converse piezoelectric response of 5.2 pm V-1 for a 35 nm film is observed, indicating the ability to predict and target multifunctionality. This illustrates a coupled theory-experimental approach to the discovery and realization of new multifunctional polymorphs.

Structure-specific synthesis processes are of key importance to the growth of polymorphic functional compounds such as TiO2, where material properties strongly depend on structure as well as chemistry. The robust growth of the brookite polymorph of TiO2, a promising photocatalyst, has been difficult in both powder and thin-film forms due to the disparity of reported synthesis techniques, their highly specific nature, and lack of mechanistic understanding. In this work, we report the growth of high-fraction (~95%) brookite thin films prepared by annealing amorphous titania precursor films deposited by pulsed laser deposition. We characterize the crystallization process, eliminating the previously suggested roles of substrate templating and Na helper ions in driving brookite formation. Instead, we link phase selection directly to film thickness, offering a novel, generalizable route to brookite growth that does not rely on the presence of extraneous elements or particular lattice-matched substrates. In addition to providing a new synthesis route to brookite thin films, our results take a step towards resolving the problem of phase selection in TiO2 growth, contributing to the further development of this promising functional material.

The potential impact of cation-substituted AlN-based materials, such as Al1−xScxN, Al1−xGaxN, and Al1−xBxN, with exceptional electronic, electromechanical, and dielectric properties has spurred research into this broad family of materials. Rare earth (RE) cations are particularly appealing as they could additionally impart optoelectronic or magnetic functionality. However, success in incorporating a significant level of RE cations into AlN has been limited so far because it is thermodynamically challenging to stabilize such heterostructural alloys. Using combinatorial co-sputtering, we synthesized Al1−xRExN (RE = Pr, Tb) thin films and performed a rapid survey of the composition–structure–property relationships as a function of RE substitution. Under our growth conditions, we observe that Al1−xPrxN maintains a phase-pure wurtzite structure until transitioning to amorphous for x ≳ 0.22. Al1−xTbxN exhibits a phase-pure wurtzite structure until x ≲ 0.15, then exhibits mixed wurtzite and rocksalt phases for 0.16 ≲ x ≲ 0.28, and finally becomes amorphous beyond that. Ellipsometry measurements reveal that the absorption onset decreases with increasing rare earth incorporation and has a strong dependence on the phases present. We observe the characteristic cathodoluminescence emission of Pr3+ and Tb3+, respectively. Using this synthesis approach, we have demonstrated incorporation of Pr and Tb into the AlN wurtzite structure up to higher compositions levels than previously reported and made the first measurements of corresponding structural and optoelectronic properties. [ABSTRACT FROM AUTHOR]

The development of tandem photovoltaics and photoelectrochemical solar cells requires new absorber materials with bandgaps in the range of ≈1.5–2.3 eV, for use in the top cell paired with a narrower‐gap bottom cell. An outstanding challenge is finding materials with suitable optoelectronic and defect properties, good operational stability, and synthesis conditions that preserve underlying device layers. This study demonstrates the Zintl phosphide compound CaZn2P2 as a compelling candidate semiconductor for these applications. Phase‐pure, ≈500 nm‐thick CaZn2P2 thin films are prepared using a scalable reactive sputter deposition process at growth temperatures as low as 100 °C, which is desirable for device integration. Ultraviolet‐visible spectroscopy shows that CaZn2P2 films exhibit an optical absorptivity of ≈104 cm−1 at ≈1.95 eV direct bandgap. Room‐temperature photoluminescence (PL) measurements show near‐band‐edge optical emission, and time‐resolved microwave conductivity (TRMC) measurements indicate a photoexcited carrier lifetime of ≈30 ns. CaZn2P2 is highly stable in both ambient conditions and moisture, as evidenced by PL and TRMC measurements. Experimental data are supported by first‐principles calculations, which indicate the absence of low‐formation‐energy, deep intrinsic defects. Overall, this study shall motivate future work integrating this potential top cell absorber material into tandem solar cells. [ABSTRACT FROM AUTHOR]

Nitride perovskites ABN3 are an emerging and highly underexplored class of materials that are of interest due to their intriguing calculated ferroelectric, optoelectronic, and other functional properties. Incorporating novel A-site cations is one strategy to tune and expand such properties; for example, Gd3+ is compelling due to its large magnetic moment, potentially leading to multiferroic behavior. However, the theoretically predicted ground state of GdWN3 was a non-perovskite monoclinic structure. Here, we experimentally show that GdWN3−y crystallizes in a perovskite structure. High-throughput combinatorial sputtering with activated nitrogen is employed to synthesize thin films of Gd2−xWxN3−yOy with oxygen content y < 0.05. Ex situ annealing crystallizes a polycrystalline perovskite phase in a narrow composition window near x = 1. LeBail fits of synchrotron grazing incidence wide angle x-ray scattering data are consistent with a perovskite ground-state structure. Refined density functional theory calculations that included antiferromagnetic configurations confirm that the ground-state structure of GdWN3 is a distorted Pnma perovskite with antiferromagnetic ordering, in contrast to prior predictions. Initial property measurements find that GdWN3−y is paramagnetic down to T = 2 K with antiferromagnetic correlations and that the absorption onset depends on cation stoichiometry. This work provides an important path toward both the rapid expansion of the emerging family of nitride perovskites and understanding their potential multiferroic properties. [ABSTRACT FROM AUTHOR]

Sustainable production of liquid fuels from abundant resources, such as carbon dioxide and water, may be possible through photoelectrochemical processes. Zinc titanium nitride (ZnTiN2) has been recently demonstrated as a potential photoelectrode semiconductor for photoelectrochemical fuel generation due to its ideal bandgap induced by cation disorder, shared crystal structure with established semiconductors, and self-passivating surface oxides under carbon dioxide reduction operating conditions. However, substantial improvements in crystalline quality and optoelectronic properties of ZnTiN2 are needed to enable such applications. In this work, we investigate the heteroepitaxial growth of ZnTiN2 on c-plane (001) sapphire substrates. Growth on sapphire improves crystal quality, while growth on sapphire at elevated temperatures (300 °C) yields highly-oriented, single-crystal-like ZnTiN2 films. When Sn is incorporated during these epitaxial growth conditions, notable improvements in ZnTiN2 film surface roughness and optoelectronic properties are observed. These improvements are attributed to Sn acting as a surfactant during growth and mitigating unintentional impurities such as O and C. The single-crystal-like, 12% Sn-containing ZnTiN2 films exhibit a steep optical absorption onset at the band gap energy around 2 eV, electrical resistivity of 0.7 Ω cm, and a carrier mobility of 0.046 cm2 V−1 s−1 with n-type carrier concentration of 2 × 1020 cm−3. Density functional theory calculations reveal that moderate substitution of Sn (12.5% of the cation sites) on energetically-preferred cation sites has negligible impact on the optoelectronic properties of cation-disordered ZnTiN2. These results are important steps toward achieving high performance PEC devices based on ZnTiN2 photoelectrodes with efficient photon absorption and photoexcited carrier extraction. [ABSTRACT FROM AUTHOR]

Beta-phase gallium oxide (β-Ga2O3) has attracted attention in recent years as a potentially low cost, large area substrate and active layer material for high power, high temperature power electronics and sensing devices. However, growth of β-Ga2O3 crystals is complicated by easily activated (100) and (001) cleavage planes, the presence of low angle grain boundaries (LAGBs) and twins, and the potential formation of polycrystalline grains. In this study, β-Ga2O3 crystals were grown by the edge-defined film-fed growth technique with an (010) principal face. Two crystals with apparently randomly formed high angle grain boundaries (HAGBs) were selected and analyzed by electron backscatter diffraction, electron channeling contrast imaging, and cathodoluminescence to investigate the nature of the LAGBs and the source of the HAGB formation. It was discovered that planar LAGBs lying parallel to the (010) plane exist in the region immediately preceding the start of an HAGB. Increased misorientation across the LAGB was observed, approaching the initiation of a new grain. We present multimodal microscopy characterization, correlating misorientation and variation in optoelectronic properties with LAGBs and the associated dislocations. [ABSTRACT FROM AUTHOR]

Materials based on tetrahedral structural motifs are the most used semiconductor systems in deployed technologies. This holds true for microelectronics based on doped Si (diamond structure), photovoltaics based on CdTe (zinc blende structure), and light emitting diodes based on GaN (wurtzite structure). In these compound examples, the extended crystal structure is determined by modifications to the arrangement of the underlying tetrahedral motifs; controlling this structure is a foundational way to design functionality in semiconductor materials. Here, N-doped ZnSe1−xTex thin films are grown by RF sputtering from compound targets with N2 gas as a N source. Crystalline films form across a large range of growth conditions, and in some N-doped films there is a transformation from the usual zinc blende structure to wurtzite. Depending on the temperature and N2 flow rate during growth, wurtzite can be synthesized across most of the composition range explored, ranging from Te-rich (x ≈ 0.7) to nearly pure ZnSe (x ≈ 0.1). Synchrotron diffraction data show that the wurtzite is phase-pure at N-doped ZnSe0.5Te0.5 alloy compositions grown under some conditions. Temperature-dependent resistivity measurements collected from N-doped ZnSe0.5Te0.5 are well fit by a model dominated by variable range hopping, suggesting defect-mediated transport. Density functional theory calculations that show that dilute N concentrations help stabilize the wurtzite polymorph of ZnSe0.5Te0.5. Electron microscopy reveals voids in the N-doped films' microstructures. We attribute this more open microstructure—which may also be partially responsible for stabilizing the wurtzite phase—to trapped N2. This work highlights unexpected polytypism in one of the most studied semiconductor systems, motivating a closer look at other semiconductor alloys for similar structural diversity. [ABSTRACT FROM AUTHOR]