Search

Your search keyword '"Mannequin, Cedric"' showing total 15 results
Start Over Author "Mannequin, Cedric"
15 results on '"Mannequin, Cedric"'

4. Atomic and Molecular Layer Deposition Area Selective Deposition using alternate deposition and etch super-cycle strategies

Author

Bonvalot, Marceline, Vallee, Christophe, Mannequin, Cedric, Jaffal, Moustapha, Gassilloud, Remy, Posseme, Nicolas, Chevolleau, Thierry, Laboratoire des technologies de la microélectronique (LTM ), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)

Subjects
[PHYS]Physics [physics]
Abstract

International audience; Area Selective Deposition (ASD) is a bottom-up process leading to a uniform deposit in only desired areas of a patterned substrate, avoiding the use of photolithography for patterning. However, whatever...

Published
2021

7. Photo-induced conductivity transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3.

Author

Traoré, Aboulaye, Gouveia, Maria, Okumura, Hironori, Mannequin, Cedric, Fassion, Andrea, and Sakurai, Takeaki

Abstract

Photo-induced conductivity transients are reported for unintentionally doped (UID) β-Ga2O3 and n-type β-(Al0.16Ga0.84)2O3. The illumination of (UID) β-Ga2O3 and β-(Al0.16Ga0.84)2O3/Ga2O3 heterojunction with a sub-bandgap light ranging from 400 to 1000 nm (1.2–3.1 eV) increases their conductivity. The increase in the conductivity still remains after the light is turned off, and then slowly exhausts. From the transient photoconductivity, the optical cross-sections of the photo-ionized defects have been measured as a function of the photon energy, and the optical absorption peaks of the ionized defects have been calculated. Thus, the measured photoconductivity in both β-Ga2O3 and (Al0.16Ga0.84)2O3 are induced by broad optical absorption peaks that have been estimated to be 2.52–2.88 eV and 2.61–3.11 eV. [ABSTRACT FROM AUTHOR]

Published
2021
Full Text
View/download PDF

15. (Invited) Metal-Insulator-Metal Devices with High-K Dielectric for Nonvolatile or Dynamic Random Access Memories

Author

Bsiesy, Ahmad, Gonon, Patrice, Vallee, Christophe, Pointet, John, and Mannequin, Cedric

Abstract

This paper presents an overview of our work on metal-insulator-metal (MIM) structures used for resistive non-volatile resistive (RRAM) or dynamic (DRAM) random access memories. Atomic layer deposition technique is used to grow the insulator layer. ALD allows monolayer thickness precision of deposited layers and flexible in-situ doping capabilities. Thanks to a suitable choice of the bottom, top electrodes and the dielectric, DRAM or RRAM functionality is enabled. It will be shown how we managed to tackle the main challenge in DRAM field where high dielectric constant along with minimum leakage current should be performed. For RRAM, the main challenge is to obtain reversible MIM resistance switching at low power and high Roff/Ron ratio. The switching mechanism in RRAM, usually attributed to oxygen vacancies percolation leading to a conduction path, has been studied with a focus on the role of the electrodes affinity to oxygen and their electron injection efficiency.

Published
2015

Catalog

Books, media, physical & digital resources
See catalog results