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Alex M\"uller and Georg Bednorz are widely recognized for their trailblazing discovery of high-temperature superconductivity and their groundbreaking research on SrTiO3. In comparison, their substantial contributions to inventing the high-Tc superconducting field-effect transistor remain relatively unknown. Nevertheless, their efforts were crucial in developing the electric field effect into a valuable tool for studying a broad spectrum of complex materials. This article provides a brief overview of these developments and of the current status in this field, with a particular focus on Alex M\"uller's visionary role in advancing the field following the discovery of high-temperature superconductivity., Comment: Contribution to a planned memorial issue for K.A. M\"uller by Physica C

Novel categories of electronic devices and quantum materials are obtained by pipelining the unitary evolution of electron quantum states as described by Schroedinger's equation with non-unitary processes that interrupt the coherent propagation of electrons. These devices and materials reside in the fascinating transition regime between quantum mechanics and classical physics. The devices are designed such that a nonreciprocal unitary state evolution is achieved by means of a broken inversion symmetry, for example as induced at material interfaces. This coherent state evolution is interrupted by individual inelastic scattering events caused by defects coupled to an environment. Two-terminal non-unitary quantum devices, for example, feature nonreciprocal conductance in linear response. Thus, they are exemptions to Onsager's reciprocal relation, and they challenge the second law of thermodynamics. Implementing the device function into the unit cells of materials or meta-materials yields novel functionalities in 2D and 3D materials, at interfaces, and in heterostructures., Comment: Summary of the lecture "Non-unitary Quantum Electronics---A New World beyond Onsager and Clausius" given on 18 July 2020 at the Les Houches Summer School on Emergent Electronic States Confined at Interfaces. Submission to SciPost

The two-dimensional layered compound PdCoO$_2$ is one of the best oxide conductors, providing an intriguing research arena opened by the long mean free path and the very high mobility of ~51000 cm2/Vs. These properties turn PdCoO$_2$ into a candidate material for nanoscale quantum devices. By exploring universal conductance fluctuations originating at nanoscale PdCoO$_2$ Hall-bar devices, we determined the phase coherence length of electron transport in c-axis oriented PdCoO$_2$ thin films to equal ~100 nm. The weak temperature dependence of the measured phase coherence length suggests that defect scattering at twin boundaries in the PdCoO$_2$ thin film governs phase breaking. These results suggest that phase coherent devices can be achieved by realizing the devices smaller than the size of twin domains, via refined microfabrication and suppression of twin boundaries., Comment: 6 pages, 5 figures

The decoherence of quantum states defines the transition between the quantum world and classical physics. Decoherence or, analogously, quantum mechanical collapse events pose fundamental questions regarding the interpretation of quantum mechanics and are technologically relevant because they limit the coherent information processing performed by quantum computers. We have discovered that the transition regime enables a novel type of matter transport. Applying this discovery, we present nanoscale devices in which decoherence, modeled by random quantum jumps, produces fundamentally novel phenomena by interrupting the unitary dynamics of electron wave packets. Noncentrosymmetric conductors with mesoscopic length scales act as two-terminal rectifiers with unique properties. In these devices, the inelastic interaction of itinerant electrons with impurities acting as electron trapping centers leads to a novel steady state characterized by partial charge separation between the two leads, or, in closed circuits to the generation of persistent currents. The interface between the quantum and the classical worlds therefore provides a novel transport regime of value for the realization of a new category of mesoscopic electronic devices., Comment: 10 pages, 7 figures

We present the concept of nonreciprocal interferometers. These two-way devices let particles pass in both directions, but in one direction break the phase of the particles' wave functions. Such filters can be realized by using, for example, asymmetric quantum rings. Furthermore, we propose arrangements of these interferometers to obtain larger interferometers which are expected to exhibit a puzzling behavior that resembles Maxwell demon action. We indicate an opportunity to resolve this puzzle experimentally., Comment: Dedicated to Dr. Tapash Chakraborty in recognition of his many and valuable contributions to nanoscale physics

Atomically thin ferromagnetic and conducting electron systems are highly desired for spintronics, because they can be controlled with both magnetic and electric fields. We present (SrRuO3)1-(SrTiO3)5 superlattices and single-unit-cell-thick SrRuO3 samples that are capped with SrTiO3. We achieve samples of exceptional quality. In these samples, the electron systems comprise only a single RuO2 plane. We observe conductivity down to 50 mK, a ferromagnetic state with a Curie temperature of 25 K, and signals of magnetism persisting up to approximately 100 K., Comment: The version published at Phys. Rev. X (open access) contains a large amount of additional material compared to the version published here

Two-dimensional electron systems with fascinating properties exist in multilayers of standard semiconductors, on helium surfaces, and in oxides. Compared to the two-dimensional (2D) electron gases of semiconductors, the 2D electron systems in oxides are typically more strongly correlated and more sensitive to the microscopic structure of the hosting lattice. This sensitivity suggests that the oxide 2D systems are highly tunable by hydrostatic pressure. Here we explore the effects of hydrostatic pressure on the well-characterized 2D electron system formed at LaAlO$_{3}$ -SrTiO$_{3}$ interfaces[1] and measure a pronounced, unexpected response. Pressure of $\sim$2 GPa reversibly doubles the 2D carrier density $n_{s}$ at 4 K. Along with the increase of $n_{s}$, the conductivity and mobility are reduced under pressure. First-principles pressure simulations reveal the same behavior of the carrier density and suggest a possible mechanism of the mobility reduction, based on the dielectric properties of both materials and their variation under external pressure., Comment: 13 pages and 10 figures main text. 6 pages and 10 figures supplementary information. Phys Rev B (in press)

A superconducting phase with an extremely low carrier density of the order of 10^13 cm^-2 is present at LaAlO3-SrTiO3 interfaces. If depleted from charge carriers by means of a gate field, this superconducting phase undergoes a transition into a metallic/insulating state that is still characterized by a gap in the spectral density of states. Measuring and analyzing the critical field of this gap, we provide evidence that macroscopically phase-coherent Cooper pairs are present in the metallic/insulating state. This is characterized by fluctuating vortex-antivortex pairs, and not by individual, immobile Cooper pairs. The measurements furthermore yield the carrier-density dependence of the superconducting coherence length of the two-dimensional system.

The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from LaAlO$_3$-SrTiO$_3$ heterostructures. The studies reveal the existence of channel-length modulation and drain-induced barrier lowering for gate lengths below 1 {\mu}m, with a characteristic behavior comparable to semiconducting devices. With the fabrication of field-effect transistors with gate lengths as small as 60 nm the results demonstrate the possibility to fabricate by electron-beam lithography functional devices based on complex oxides with characteristic lengths of several ten nanometers., Comment: To be published in Phys. Rev. Applied

The emergence of magnetism in otherwise nonmagnetic compounds and its underlying mechanisms have become the subject of intense research. Here we demonstrate that the nonmagnetic oxygen vacancies are responsible for an unconventional magnetic state common for titanate interfaces and surfaces. Using an effective multiorbital modelling, we find that the presence of localized vacancies leads to an interplay of ferromagnetic order in the itinerant t2g band and complex magnetic oscillations in the orbitally-reconstructed eg-band, which can be tuned by gate fields at oxide interfaces. The magnetic phase diagram includes highly fragmented regions of stable and phase-separated magnetic states forming beyond nonzero critical defect concentrations., Comment: 5 pages, 4 figures

Emergent phenomena, including superconductivity and magnetism, found in the two-dimensional electron liquid (2-DEL) at the interface between the insulators LaAlO3 and SrTiO3 distinguish this rich system from conventional two-dimensional electron gases at compound semiconductor interfaces. The origin of this 2-DEL, however, is highly debated with focus on the role of defects in the SrTiO3 while the LaAlO3 has been assumed perfect. Our experiments and first principles calculations show that the cation stoichiometry of the nominal LaAlO3 layer is key to 2-DEL formation: only Al-rich LaAlO3 results in a 2-DEL. While extrinsic defects including oxygen deficiency are known to render LaAlO3/SrTiO3 samples conducting, our results show that in the absence of such extrinsic defects, an interface 2-DEL can form. Its origin is consistent with an intrinsic electronic reconstruction occurring to counteract a polarization catastrophe. This work provides a roadmap for identifying other interfaces where emergent behaviors await discovery.

Electric power may, in principle, be generated in a highly efficient manner from heat created by focused solar irradiation, chemical combustion, or nuclear decay by means of thermionic energy conversion. As the conversion efficiency of the thermionic process tends to be degraded by electron space charges, the efficiencies of thermionic generators have amounted to only a fraction of those fundamentally possible. We show that this space-charge problem can be resolved by shaping the electric potential distribution of the converter such that the static electron space-charge clouds are transformed into an output current. Although the technical development of practical generators will require further substantial efforts, we conclude that a highly efficient transformation of heat to electric power may well be achieved., Comment: 10 pages including appendix, 4 figures

The interface between LaAlO3 and SrTiO3 hosts a two-dimensional electron system of itinerant carriers, although both oxides are band insulators. Interface ferromagnetism coexisting with superconductivity has been found and attributed to local moments. Experimentally, it has been established that Ti 3d electrons are confined to the interface. Using soft x-ray angle-resolved resonant photoelectron spectroscopy we have directly mapped the interface states in k-space. Our data demonstrate a charge dichotomy. A mobile fraction contributes to Fermi surface sheets, whereas a localized portion at higher binding energies is tentatively attributed to electrons trapped by O-vacancies in the SrTiO3. While photovoltage effects in the polar LaAlO3 layers cannot be excluded, the apparent absence of surface-related Fermi surface sheets could also be fully reconciled in a recently proposed electronic reconstruction picture where the built-in potential in the LaAlO3 is compensated by surface O-vacancies serving also as charge reservoir., Comment: 8 pages, 6 figures, incl. Supplemental Information

With infrared ellipsometry, x-ray diffraction, and electric transport measurements we investigated the electric-field-effect on the confined electrons at the LaAlO3/SrTiO3 interface. We obtained evidence that the localization of the electrons at low temperature and negative gate voltage is induced, or at least strongly enhanced, by a pyroelectric phase transition in SrTiO3 which strongly reduces the lattice polarizability and the subsequent Coulomb screening. In particular, we show that the charge localisation and the polar order of SrTiO3 both develop below about 50 K and exhibit similar, unipolar hysteresis loops as a function of the gate voltage. Our findings suggest that the pyroelectric order also plays an important role in the quantum phase transition at very low temperatures where superconductivity is suppressed by an electric field., Comment: 5 pages, 4 figures, supplementary material

A two-dimensional electron liquid is formed at the n-type interface between SrTiO3 and LaAlO3. Here we report on Kelvin probe microscopy measurements of the electronic compressibility of this electron system. The electronic compressibility is found to be negative for carrier densities of \approx10^13/cm^2. At even smaller densities, a metal-to-insulator transition occurs. These local measurements corroborate earlier measurements of the electronic compressibility of LaAlO3-SrTiO3 interfaces obtained by measuring the capacitance of macroscopic metal-LaAlO3-SrTiO3 capacitors.

We show that oxygen vacancies at titanate interfaces induce a complex multiorbital reconstruction which involves a lowering of the local symmetry and an inversion of t2g and eg orbitals resulting in the occupation of the eg orbitals of Ti atoms neighboring the O vacancy. The orbital reconstruction depends strongly on the clustering of O vacancies and can be accompanied by a magnetic splitting between the local eg orbitals with lobes directed towards the vacancy and interface dxy orbitals. The reconstruction generates a two-dimensional interface magnetic state not observed in bulk SrTiO3. Using generalized gradient approximation (LSDA) with intra-atomic Coulomb repulsion (GGA+U), we find that this magnetic state is common for titanate surfaces and interfaces., Comment: 13 pages, 18 figures, to appear in Physical Review B

Using LaAlO$_3$-SrTiO$_3$ bilayers, we have fabricated field-effect devices that utilize the two-dimensional electron liquid generated at the bilayers' {\textit n}-type interfaces as drain-source channels and the LaAlO$_3$ layers as gate dielectrics. With gate voltages well below 1\,V, the devices are characterized by voltage gain and current gain. The devices were operated at temperatures up to 100\,{\deg}C., Comment: to be published in Applied Physics Letters

We discuss a scenario for interface-induced superconductivity involving pairing by dipolar excitations proximate to a two-dimensional electron system controlled by a transverse electric field. If the interface consists of transition metal oxide materials, the repulsive on-site Coulomb interaction is typically strong and a superconducting state is formed via exchange of non-local dipolar excitations in the d-wave channel. Perspectives to enhance the superconducting transition temperature are discussed., Comment: 4 pages, 3 figures

Ferromagnetism and superconductivity are in most cases adverse. However, recent experiments reveal that they coexist at interfaces of LaAlO3 and SrTiO3. We analyze the magnetic state within density functional theory and provide evidence that magnetism is not an intrinsic property of the two-dimensional electron liquid at the interface. We demonstrate that the robust ferromagnetic state is induced by the oxygen vacancies in SrTiO3- or in the LaAlO3-layer. This allows for the notion that areas with increased density of oxygen vacancies produce ferromagnetic puddles and account for the previous observation of a superparamagnetic behavior in the superconducting state., Comment: 5 pages, 4 figures, to appear in Physical Review B (Rapid Communications)

A two dimensional electronic system with novel electronic properties forms at the interface between the insulators LaAlO$_3$ and SrTiO$_3$. Samples fabricated until now have been found to be either magnetic or superconducting, depending on growth conditions. We combine transport measurements with high-resolution magnetic torque magnetometry and report here evidence of magnetic ordering of the two-dimensional electron liquid at the interface. The magnetic ordering exists from well below the superconducting transition to up to 200 K, and is characterized by an in-plane magnetic moment. Our results suggest that there is either phase separation or coexistence between magnetic and superconducting states. The coexistence scenario would point to an unconventional superconducting phase in the ground state., Comment: 10 pages, 4 figures

The evolution of the atomic structure of LaAlO3 grown on SrTiO3 was investigated using surface x-ray diffraction in conjunction with model-independent, phase-retrieval algorithms between two and five monolayers film thickness. A depolarizing buckling is observed between cation and oxygen positions in response to the electric field of polar LaAlO3, which decreases with increasing film thickness. We explain this in terms of competition between elastic strain energy, electrostatic energy, and electronic reconstructions. The findings are qualitatively reproduced by density-functional theory calculations. Significant cationic intermixing across the interface extends approximately three monolayers for all film thicknesses. The interfaces of films thinner than four monolayers therefore extend to the surface, which might affect conductivity.

We report on a metal-insulator transition in the LaAlO3-SrTiO3 interface electron system, of which the carrier density is tuned by an electric gate field. Below a critical carrier density n_c ranging from 0.5-1.5 * 10^13/cm^2, LaAlO3-SrTiO3 interfaces, forming drain-source channels in field-effect devices are non-ohmic. The differential resistance at zero channel bias diverges within a 2% variation of the carrier density. Above n_c, the conductivity of the ohmic channels has a metal-like temperature dependence, while below n_c conductivity sets in only above a threshold electric field. For a given thickness of the LaAlO3 layer, the conductivity follows a sigma_0 ~(n - n_c)/n_c characteristic. The metal-insulator transition is found to be distinct from that of the semiconductor 2D systems., Comment: 4 figures

Novel electronic systems forming at oxide interfaces comprise a class of new materials with a wide array of potential applications. A high mobility electron system forms at the LaAlO$_3$/SrTiO$_3$ interface and, strikingly, both superconducts and displays indications of hysteretic magnetoresistance. An essential step for device applications is establishing the ability to vary the electronic conductivity of the electron system by means of a gate. We have fabricated metallic top gates above a conductive interface to vary the electron density at the interface. By monitoring capacitance and electric field penetration, we are able to tune the charge carrier density and establish that we can completely deplete the metallic interface with small voltages. Moreover, at low carrier densities, the capacitance is significantly enhanced beyond the geometric capacitance for the structure. In the same low density region, the metallic interface overscreens an external electric field. We attribute these observations to a negative compressibility of the electronic system at the interface. Similar phenomena have been observed previously in semiconducting two-dimensional electronic systems. The observed compressibility result is consistent with the interface containing a system of mobile electrons in two dimensions., Comment: 4 figures in main text; 4 figures in the supplement

Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C.

The interface properties of high-temperature cuprate superconductors have been of interest for many years, and play an essential role in Josephson junctions, superconducting cables, and microwave electronics. In particular, the maximum critical current achievable in high-Tc wires and tapes is well known to be limited by the presence of grain boundaries, regions of mismatch between crystallites with misoriented crystalline axes. In studies of single, artificially fabricated grain boundaries the striking observation has been made that the critical current Jc of a grain boundary junction depends exponentially on the misorientation angle. Until now microscopic understanding of this apparently universal behavior has been lacking. We present here the results of a microscopic evaluation based on a construction of fully 3D YBCO grain boundaries by molecular dynamics. With these structures, we calculate an effective tight-binding Hamiltonian for the d-wave superconductor with a grain boundary. The critical current is then shown to follow an exponential suppression with grain boundary angle. We identify the buildup of charge inhomogeneities as the dominant mechanism for the suppression of the supercurrent., Comment: 28 pages, 12 figures

With infrared ellipsometry and transport measurements we investigated the electrons at the interface between LaAlO3 and SrTiO3. We obtained a sheet carrier density of Ns~5-9x 10E13 cm^-2, an effective mass of m*~3m_e, and a strongly frequency dependent mobility. The latter are similar as in bulk SrTi1-xNbxO3 and therefore suggestive of polaronic correlations of the confined carriers. We also determined the vertical density profile which has a strongly asymmetric shape with a rapid initial decay over the first 2 nm and a pronounced tail that extends to about 11 nm., Comment: 4 pages, 3 figures, 1 EPAPS file (3 figures)

Using tunneling spectroscopy we have measured the spectral density of states of the mobile, two-dimensional electron system generated at the LaAlO3-SrTiO3 interface. As shown by the density of states the interface electron system differs qualitatively, first, from the electron systems of the materials defining the interface and, second, from the two-dimensional electron gases formed at interfaces between conventional semiconductors.

The so-called "polar catastrophe", a sudden electronic reconstruction taking place to compensate for the interfacial ionic polar discontinuity, is currently considered as a likely factor to explain the surprising conductivity of the interface between the insulators LaAlO3 and SrTiO3. We applied optical second harmonic generation, a technique that a priori can detect both mobile and localized interfacial electrons, to investigating the electronic polar reconstructions taking place at the interface. As the LaAlO3 film thickness is increased, we identify two abrupt electronic rearrangements: the first takes place at a thickness of 3 unit cells, in the insulating state; the second occurs at a thickness of 4-6 unit cells, i.e., just above the threshold for which the samples become conducting. Two possible physical scenarios behind these observations are proposed. The first is based on an electronic transfer into localized electronic states at the interface that acts as a precursor of the conductivity onset. In the second scenario, the signal variations are attributed to the strong ionic relaxations taking place in the LaAlO3 layer.

Conventional two-dimensional electron gases are realized by engineering the interfaces between semiconducting compounds. In 2004, Ohtomo and Hwang discovered that an electron gas can be also realized at the interface between large gap insulators made of transition metal oxides [1]. This finding has generated considerable efforts to clarify the underlying microscopic mechanism. Of particular interest is the LaAlO3/SrTiO3 system, because it features especially striking properties. High carrier mobility [1], electric field tuneable superconductivity [2] and magnetic effects [3], have been found. Here we show that an orbital reconstruction is underlying the generation of the electron gas at the LaAlO3/SrTiO3 n-type interface. Our results are based on extensive investigations of the electronic properties and of the orbital structure of the interface using X-ray Absorption Spectroscopy. In particular we find that the degeneracy of the Ti 3d states is fully removed, and that the Ti 3dxy levels become the first available states for conducting electrons., Comment: 12 pages, 3 figures

The conducting interface of LaAlO$_3$/SrTiO$_3$ heterostructures has been studied by hard X-ray photoelectron spectroscopy. From the Ti~2$p$ signal and its angle-dependence we derive that the thickness of the electron gas is much smaller than the probing depth of 4 nm and that the carrier densities vary with increasing number of LaAlO$_3$ overlayers. Our results point to an electronic reconstruction in the LaAlO$_3$ overlayer as the driving mechanism for the conducting interface and corroborate the recent interpretation of the superconducting ground state as being of the Berezinskii-Kosterlitz-Thouless type., Comment: 4 pages, 4 figures

Interfaces between complex oxides are emerging as one of the most interesting playgrounds in condensed matter physics. In this special setting, in which translational symmetry is artificially broken, a variety of novel electronic phases can be promoted. Theoretical studies predict complex phase diagrams and suggest the key role of the carrier density in determining the systems ground states. A particularly fascinating system is the interface between the insulators LaAlO$_{3}$ and SrTiO$_{3}$, which displays conductivity with high mobility. Recently two possible ground states have been experimentally identified: a magnetic state and a two dimensional (2D) superconducting condensate. In this Letter we use the electric field effect to explore the phase diagram of the system. The electrostatic tuning of the carrier density allows an on/off switching of superconductivity and drives a quantum phase transition (QPT) between a 2D superconducting state and an insulating state (2D-QSI). Analyses of the magnetotransport properties in the insulating state are consistent with weak localisation and do not provide evidence for magnetism. The electric field control of superconductivity demonstrated here opens the way to the development of novel mesoscopic superconducting circuits, Comment: 11 pages, 4 figures

The magnetic flux periodicity of superconducting loops as well as flux quantization itself are a manifestation of macroscopic quantum phenomena with far reaching implications. They provide the key to the understanding of many fundamental properties of superconductors and are the basis for most bulk and device applications of these materials. In superconducting rings the electrical current has been known to periodically respond to a magnetic flux with a periodicity of $\bm{h/2e}$. Here, the ratio of Planck's constant and the elementary charge defines the magnetic flux quantum $\bm{h/e}$. The well-known $\bm{h/2e}$ periodicity is viewed to be a hallmark for electronic pairing in superconductors and is considered evidence for the existence of Cooper pairs. Here we show that in contrast to this long-term belief, rings of many superconductor bear an $\bm{h/e}$ periodicity. These superconductors include the high-$\bm{T_c}$ cuprates, Sr$_2$RuO$_4$, the heavy-fermion superconductors, as well as all other unconventional superconductors with nodes in the energy gap functions, and s-wave superconductors with small gaps or states in the gap. As we show, the 50-year-old Bardeen--Cooper--Schrieffer theory of superconductivity implies that for multiply connected paths of such superconductors the ground-state energies and consequently also the supercurrents are generically $\bm{h/e}$ periodic. The origin of this periodicity is a magnetic-field driven reconstruction of the condensate and a concomitant Doppler-shifted energy spectrum. The robust, flux induced reconstruction of the condensate will be an important aspect to understand the magnetic properties of mesoscopic unconventional superconductors., Comment: To appear in Nature Physics (2008). The new version has the same main text and figures but also includes the supplementary material with a short Appendix A on the "Numerical Method" and a longer Appendix B on an analytical "Multichannel Model for Large D-Wave Rings"

This article addresses the question whether the magnetic flux of stationary vortices or of half flux quanta generated by frustrated superconducting rings is noisy. It is found that the flux noise generated intrinsically by a superconductor is, in good approximation, not enhanced by stationary vortices. Half flux quanta generated by $\pi$-rings are characterized by considerably larger noise., Comment: 11 pages, 3 figures. in: A. Bussmann-Holder, H. Keller (Eds.) High Tc Superconductors and Related Transition Metal Oxides, Springer, 237-242; also to be published in: Journal of Superconductivity (2007)

The purpose of this article is to discuss a view concerning key datasets of the properties of grain boundaries in high-Tc superconductors that was recently expressed in Ref. 1. The reference also criticizes our research. Using examples I disprove this criticism., Comment: Physica C, in press

The (001) surface of NiO, an antiferromagnet at room temperature, was investigated under ultra-high vacuum conditions with frequency modulation atomic force microscopy (FM-AFM). The antiferromagnetic coupling between ions leads to a spin superstructure on (001) surfaces. Exchange interaction between the probe of a force microscope and the NiO (001) surface should allow to image spin superstructures in real space. The surface was imaged with three different probing tips: nonmagnetic W tips, ferromagnetic Co tips and antiferromagnetic NiO tips - and atomic resolution was achieved with all three of them in various distance regimes and in several channels. Evidence for spin contrast was obtained in experiments that utilize NiO tips and oscillation amplitudes in the \AA-regime, where optimal signal-to-noise ratio is expected. The spin contrast is weaker than expected and only visible in Fourier space images., Comment: 7 pages, 6 figures, submitted to Physical Review B

Does the size of atoms present a lower limit to the size of electronic structures that can be fabricated in solids? This limit can be overcome by using devices that exploit quantum mechanical scattering of electron waves at atoms arranged in focussing geometries on selected surfaces. Calculations reveal that features smaller than a hydrogen atom can be obtained. These structures are potentially useful for device applications and offer a route to the fabrication of ultrafine and well defined tips for scanning tunneling microscopy., Comment: 4 pages, 4 figures

A new concept for nonvolatile superconducting memories is proposed. The devices combine ferromagnetic dots for the storage of the data and Josephson junctions for their readout. Good scalability is expected for large scale integration. First memory cells have been implemented using 3 $\mu$m-Nb-technology and permalloy dots. Nonvolatile data storage at 300 K was demonstrated., Comment: 8 Pages, 5 Figures

The local work function of a surface determines the spatial decay of the charge density at the Fermi level normal to the surface. Here, we present a method that enables simultaneous measurements of local work function and tip-sample forces. A combined dynamic scanning tunneling microscope and atomic force microscope is used to measure the tunneling current between an oscillating tip and the sample in real time as a function of the cantilever's deflection. Atomically resolved work function measurements on a silicon (111)-($7\times 7$) surface are presented and related to concurrently recorded tunneling current- and force- measurements., Comment: 8 pages, 4 figures, submitted to Applied Physics Letters

Theory predicts that the currents in scanning tunneling microscopy (STM) and the attractive forces measured in atomic force microscopy (AFM) are directly related. Atomic images obtained in an attractive AFM mode should therefore be redundant because they should be \emph{similar} to STM. Here, we show that while the distance dependence of current and force is similar for graphite, constant-height AFM- and STM images differ substantially depending on distance and bias voltage. We perform spectroscopy of the tunneling current, the frequency shift and the damping signal at high-symmetry lattice sites of the graphite (0001) surface. The dissipation signal is about twice as sensitive to distance as the frequency shift, explained by the Prandtl-Tomlinson model of atomic friction., Comment: 4 pages, 4 figures, accepted at Physical Review Letters

Across a faceted (100)/(110) interface between two d-wave-superconductors the structure of the superconducting order parameter leads to an alternating sign of the local Josephson coupling. Describing the Cooper pair motion along and across the interface by a one-dimensional boson lattice model, we show that a small attractive interaction between the bosons boosts boson binding at the interface -- a phenomenon, which is intimately tied to the staggered sequence of 0- and Pi-junction contacts along the interface. We connect this finding to the recently observed h/4e oscillations in (100)/(110) SQUIDS of cuprate superconductors., Comment: 13 pages, 2 figures

The current-voltage characteristics of Superconducting Quantum Interference Devices (SQUIDs) are known to modulate as a function of applied magnetic field with a period of one flux quantum $\Phi_0=h$/2e. Here we report on the fabrication and properties of SQUIDs modulating with a period of $1/2\times\Phi_0$. The characteristics of these bicrystal SQUIDs are consistent with either a strong sin(2$\phi$) component of the current-phase relation of the Josephson current, or with an interaction between the Cooper-pairs, causing an admixture of quartets to the condensate., Comment: 15 pages, 4 Figures

Although initially quite controversial, it has been widely accepted that the Cooper pairs in optimally doped cuprate superconductors have predominantly dx2-y2 wavefunction symmetry. The controversy has now shifted to whether the high-Tc pairing symmetry changes away from optimal doping. Here we present phase-sensitive tricrystal experiments on three cuprate systems: Y0.7Ca0.3Ba2Cu3O7-x (Ca-doped Y-123), La2-xSrxCuO4 (La-214) and Bi2Sr2CaCu2O8+x (Bi-2212),with doping levels covering the underdoped, optimal and overdoped regions. Our work implies that time-reversal invariant, predominantly dx2-y2 pairing symmetry is robust over a large variation in doping, and underscores the important role of on-site Coulomb repulsion in the making of high-temperature superconductivity., Comment: 4 pages, 4 figures

We consider the pairing induced in a strictly 2D electron gas (2DEG) by a proximate insulating film with polarizable localized excitations. Within a model of interacting 2D electrons and localized two-level systems, we calculate the critical temperature $T_c$ as a function of applied voltage and for different materials properties. Assuming that a sufficient carrier density can be induced in a field-gated device, we argue that superconductivity may be observable in such systems. $T_c$ is found to be a nonmonotonic function of both electric field and the excitation energy of the two-level systems., Comment: 11 pages, 11 figures, text and figures updated to published version

The current-induced dissipation in YBCO grain boundary tunnel junctions has been measured between 4.2 K and 300 K. It is found that the resistance of 45 degree (100)/(110) junctions decreases linearly by a factor of four when their temperature is increased from 100 K to 300 K. At the superconducting transition temperature Tc the grain boundary resistance of the normal state and of the superconducting state extrapolate to the same value., Comment: 14 pages, 4 figures

The structure of single atoms in real space is investigated by scanning tunneling microscopy. Very high resolution is possible by a dramatic reduction of the tip-sample distance. The instabilities which are normally encountered when using small tip-sample distances are avoided by oscillating the tip of the scanning tunneling microscope vertically with respect to the sample. The surface atoms of Si(111)-(7 x 7) with their well-known electronic configuration are used to image individual samarium, cobalt, iron and silicon atoms. The resulting images resemble the charge density corresponding to 4f, 3d and 3p atomic orbitals., Comment: Submitted to Phys. Rev. B, 17 pages, 7 figures