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Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak antilocalization measurements. The effective mass of InSb holes strongly increases with carrier density as determined from the temperature dependence of Shubnikov–de Haas oscillations. Coincidence measurements in a tilted magnetic field are performed to estimate the spin susceptibility of the InSb two-dimensional hole system. The g factor of the two-dimensional hole system decreases rapidly with increasing carrier density., Physical Review Research, 5 (1), ISSN:2643-1564

What are the ground states of an interacting, low-density electron system? In the absence of disorder, it has long been expected that as the electron density is lowered, the exchange energy gained by aligning the electron spins should exceed the enhancement in the kinetic (Fermi) energy, leading to a (Bloch) ferromagnetic transition. At even lower densities, another transition to a (Wigner) solid, an ordered array of electrons, should occur. Experimental access to these regimes, however, has been limited because of the absence of a material platform that supports an electron system with very high quality (low disorder) and low density simultaneously. Here we explore the ground states of interacting electrons in an exceptionally clean, two-dimensional electron system confined to a modulation-doped AlAs quantum well. The large electron effective mass in this system allows us to reach very large values of the interaction parameter [Formula: see text] , defined as the ratio of the Coulomb to Fermi energies. As we lower the electron density via gate bias, we find a sequence of phases, qualitatively consistent with the above scenario: a paramagnetic phase at large densities, a spontaneous transition to a ferromagnetic state when [Formula: see text] surpasses 35, and then a phase with strongly nonlinear current-voltage characteristics, suggestive of a pinned Wigner solid, when [Formula: see text] exceeds [Formula: see text]. However, our sample makes a transition to an insulating state at [Formula: see text] , preceding the onset of the spontaneous ferromagnetism, implying that besides interaction, the role of disorder must also be taken into account in understanding the different phases of a realistic dilute electron system.

In 1929, Felix Bloch suggested that the paramagnetic Fermi sea of electrons should make a spontaneous transition to a fully magnetized state at very low densities, because the exchange energy gained by aligning the spins exceeds the enhancement in the kinetic energy1. However, experimental realizations of this effect have been hard to implement. Here, we report the observation of an abrupt, interaction-driven transition to full magnetization, highly reminiscent of Bloch ferromagnetism. Our platform utilizes the two-dimensional Fermi sea of composite fermions near half-filling of the lowest Landau level. We measure the Fermi wavevector—which directly provides the spin polarization—and observe a sudden transition from a partially spin-polarized to a fully spin-polarized ground state as we lower the density of the composite fermions. Our theoretical calculations that take Landau level mixing into account provide a semi-quantitative account of this phenomenon. Composite fermions can be tuned to very low effective density in a clean two-dimensional electron gas, which allows the formation of a Bloch ferromagnet.

A low-disorder, two-dimensional electron system (2DES) subjected to a large perpendicular magnetic field and cooled to very low temperatures provides a rich platform for studies of many-body quantum phases. The magnetic field quenches the electrons' kinetic energy and quantizes the energy into a set of Landau levels, allowing the Coulomb interaction to dominate. In excited Landau levels, the fine interplay between short- and long-range interactions stabilizes bubble phases, Wigner crystals with more than one electron per unit cell. Here, we present the screening properties of bubble phases, probed via a simple capacitance technique where the 2DES is placed between a top and a bottom gate and the electric field penetrating through the 2DES is measured. The bubbles formed at very low temperatures screen the electric field poorly as they are pinned by the residual disorder potential, allowing a large electric field to reach the top gate. As the temperature is increased, the penetrating electric field decreases and, surprisingly, exhibits a pronounced minimum at a temperature that appears to coincide with the melting temperature of the bubble phase. We deduce a quantitative phase diagram, as a function of Landau level filling factor (\ensuremath{\nu}) and temperature, for the transition from the bubble to liquid phases for $4\ensuremath{\le}\ensuremath{\nu}\ensuremath{\le}5$.

The fractional quantum Hall effect stands as a quintessential manifestation of an interacting two-dimensional electron system. One of the fractional quantum Hall effect's most fundamental characteristics is the energy gap separating the incompressible ground state from its excitations. Yet, despite nearly four decades of investigations, a quantitative agreement between the theoretically calculated and experimentally measured energy gaps is lacking. Here we report a systematic experimental study that incorporates very high-quality two-dimensional electron systems confined to GaAs quantum wells with fixed density and varying well widths. The results demonstrate a clear decrease of the energy gap as the electron layer is made thicker and the short-range component of the Coulomb interaction is weakened. We also provide a quantitative comparison between the measured energy gaps and the available theoretical calculations that takes into account the role of finite layer thickness and Landau level mixing. All the measured energy gaps fall below the calculations, but as the electron layer thickness increases, the results of experiments and calculations come closer. Accounting for the role of disorder in a phenomenological manner, we find better overall agreement between the measured and calculated energy gaps, although some puzzling discrepancies remain.

Memory or transistor devices based on an electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field, valleytronics, which seeks to exploit an electron's valley index rather than its spin. An important component in this quest would be the ability to control the valley index in a convenient fashion. Here we show that the valley polarization can be switched from zero to 1 by a small reduction in density, simply tuned by a gate bias, in a two-dimensional electron system. This phenomenon, which is akin to Bloch spin ferromagnetism, arises fundamentally as a result of electron-electron interaction in an itinerant, dilute electron system. Essentially, the kinetic energy favors an equal distribution of electrons over the available valleys, whereas the interaction between electrons prefers single-valley occupancy below a critical density. The gate-bias-tuned transition we observe is accompanied by a sudden, twofold change in sample resistance, making the phenomenon of interest for potential valleytronic transistor device applications. Our observation constitutes a quintessential demonstration of valleytronics in a very simple experiment.

Two-dimensional electrons confined to GaAs quantum wells are hallmark platforms for probing electron-electron interaction. Many key observations have been made in these systems as sample quality improved over the years. Here, we present a breakthrough in sample quality via source-material purification and innovation in GaAs molecular beam epitaxy vacuum chamber design. Our samples display an ultra-high mobility of $44\times10^6$ cm$^2$/Vs at an electron density of $2.0\times10^{11}$ /cm$^2$. These results imply only 1 residual impurity for every $10^{10}$ Ga/As atoms. The impact of such low impurity concentration is manifold. Robust stripe/bubble phases are observed, and several new fractional quantum Hall states emerge. Furthermore, the activation gap of the $\nu=5/2$ state, which is widely believed to be non-Abelian and of potential use for topological quantum computing, reaches $\Delta\simeq820$ mK. We expect that our results will stimulate further research on interaction-driven physics in a two-dimensional setting and significantly advance the field., Comment: 15 pages, 4 figures in main text. 4 pages, 2 figures in supplement. Nat. Mater. (2021)

A fundamental concept in physics is the Fermi surface, the constant-energy surface in momentum space encompassing all the occupied quantum states at absolute zero temperature. In 1960, Luttinger postulated that the area enclosed by the Fermi surface should remain unaffected even when electron-electron interaction is turned on, so long as the interaction does not cause a phase transition. Understanding what determines the Fermi surface size is a crucial and yet unsolved problem in strongly interacting systems such as high-$T_{c}$ superconductors. Here we present a precise test of the Luttinger theorem for a two-dimensional Fermi liquid system where the exotic quasi-particles themselves emerge from the strong interaction, namely for the Fermi sea of composite fermions (CFs). Via direct, geometric resonance measurements of the CFs' Fermi wavevector down to very low electron densities, we show that the Luttinger theorem is obeyed over a significant range of interaction strengths, in the sense that the Fermi sea area is determined by the density of the \textit{minority carriers} in the lowest Landau level. Our data also address the ongoing debates on whether or not CFs obey particle-hole symmetry, and if they are Dirac particles. We find that particle-hole symmetry is obeyed, but the measured Fermi sea area differs quantitatively from that predicted by the Dirac model for CFs., 6 pages, 4 figures

Hydrostatic pressure is a useful tool that can tune several key parameters in solid state materials. For example, the Land\'e $g$-factor in GaAs two-dimensional electron systems (2DESs) is expected to change from its bulk value $g\simeq-0.44$ to zero and even to positive values under a sufficiently large hydrostatic pressure. Although this presents an intriguing platform to investigate electron-electron interaction in a system with $g=0$, studies are quite limited because the GaAs 2DES density decreases significantly with increasing hydrostatic pressure. Here we show that a simple model, based on pressure-dependent changes in the conduction band alignment, quantitatively explains this commonly observed trend. Furthermore, we demonstrate that the decrease in the 2DES density can be suppressed by more than a factor of 3 through an innovative heterostructure design., Comment: 4 pages, 3 figures

Suppressing electron scattering is essential to achieve high-mobility two-dimensional electron systems (2DESs) that are clean enough to probe exotic interaction-driven phenomena. In heterostructures it is common practice to utilize modulation doping, where the ionized dopants are physically separated from the 2DES channel. The doping-well structure augments modulation doping by providing additional screening for all types of charged impurities in the vicinity of the 2DES, which is necessary to achieve record-breaking samples. Despite its prevalence in the design of ultra-high-mobility 2DESs, the working principles of the doping-well structure have not been reported. Here we elaborate on the mechanics of electron transfer from doping wells to the 2DES, focusing on GaAs/AlGaAs samples grown by molecular beam epitaxy. Based on this understanding we demonstrate how structural parameters in the doping well can be varied to tune the properties of the 2DES., 6 pages, 5 fitures

When Landau levels (LLs) become degenerate near the Fermi energy in the quantum Hall regime, interaction effects can drastically modify the electronic ground state. We study the quantum Hall ferromagnet formed in a two-dimensional hole gas around the LL filling factor ν = 1 in the vicinity of a LL crossing in the heave-hole valence band. Cavity spectroscopy in the strong-coupling regime allows us to optically extract the spin polarization of the two-dimensional hole gas. By analyzing this polarization as a function of hole density and magnetic field, we observe a spin flip of the ferromagnet. Furthermore, the depolarization away from v=1 accelerates close to the LL crossing. This is indicative of an increase in the size of skyrmion excitations as the effective Zeeman energy vanishes at the LL crossing., Physical Review Letters, 125 (6), ISSN:0031-9007, ISSN:1079-7114

A sufficiently large perpendicular magnetic field quenches the kinetic (Fermi) energy of an interacting two-dimensional (2D) system of fermions, making them susceptible to the formation of a Wigner solid (WS) phase in which the charged carriers organize themselves in a periodic array in order to minimize their Coulomb repulsion energy. In low-disorder 2D electron systems confined to modulation-doped GaAs heterostructures, signatures of a magnetic-field-induced WS appear at low temperatures and very small Landau level filling factors ($\nu\simeq1/5$). In dilute GaAs 2D \textit{hole} systems, on the other hand, thanks to the larger hole effective mass and the ensuing Landau level mixing, the WS forms at relatively higher fillings ($\nu\simeq1/3$). Here we report our measurements of the fundamental temperature vs. filling phase diagram for the 2D holes' WS-liquid \textit{thermal melting}. Moreover, via changing the 2D hole density, we also probe their Landau level mixing vs. filling WS-liquid \textit{quantum melting} phase diagram. We find our data to be in good agreement with the results of very recent calculations, although intriguing subtleties remain., Comment: Phys. Rev. Lett. (in press) (2020)

What is the fate of the ground state of a two-dimensional electron system (2DES) at very low Landau level filling factors ($\nu$) where interaction reigns supreme? An ordered array of electrons, the so-called Wigner crystal, has long been believed to be the answer. It was in fact the search for the elusive Wigner crystal that led to the discovery of an unexpected, incompressible liquid state, namely the fractional quantum Hall state at $\nu=1/3$. Understanding the competition between the liquid and solid ground states has since remained an active field of fundamental research. Here we report experimental data for a new two-dimensional system where the electrons are confined to an AlAs quantum well. The exceptionally high quality of the samples and the large electron effective mass allow us to determine the liquid-solid phase diagram for the two-dimensional electrons in a large range of filling factors near $\simeq 1/3$ and $\simeq 1/5$. The data and their comparison with an available theoretical phase diagram reveal the crucial role of Landau level mixing and finite electron layer thickness in determining the prevailing ground states.

Two-dimensional interacting electrons exposed to strong perpendicular magnetic fields generate emergent, exotic quasiparticles phenomenologically distinct from electrons. Specifically, electrons bind with an even number of flux quanta, and transform into composite fermions (CFs). Besides providing an intuitive explanation for the fractional quantum Hall states, CFs also possess Fermi-liquid-like properties, including a well-defined Fermi sea, at and near even-denominator Landau level filling factors such as $��=1/2$ or $1/4$. Here, we directly probe the Fermi sea of the rarely studied four-flux CFs near $��=1/4$ via geometric resonance experiments. The data reveal some unique characteristics. Unlike in the case of two-flux CFs, the magnetic field positions of the geometric resonance resistance minima for $��1/4$ are symmetric with respect to the position of $��=1/4$. However, when an in-plane magnetic field is applied, the minima positions become asymmetric, implying a mysterious asymmetry in the CF Fermi sea anisotropy for $��1/4$. This asymmetry, which is in stark contrast to the two-flux CFs, suggests that the four-flux CFs on the two sides of $��=1/4$ have very different effective masses, possibly because of the proximity of the Wigner crystal formation at small $��$., 7 pages, 4 figures, supplemental materials

We have developed a scanning photoluminescence technique that can directly map out the local two-dimensional electron density with a relative accuracy of $\sim2.2\times10^8$ cm$^{-2}$. The validity of this approach is confirmed by the observation of the expected density gradient in a high-quality GaAs quantum well sample that was not rotated during the molecular beam epitaxy of its spacer layer. In addition to this global variation in electron density, we observe local density fluctuations across the sample. These random density fluctuations are also seen in samples that were continuously rotated during growth, and we attribute them to residual space charges at the substrate-epitaxy interface. This is corroborated by the fact that the average magnitude of density fluctuations is increased to $\sim9\times10^{9}$ cm$^{-2}$ from $\sim1.2\times10^9$ cm$^{-2}$ when the buffer layer between the substrate and the quantum well is decreased by a factor of seven. Our data provide direct evidence for local density inhomogeneities even in very high-quality two-dimensional carrier systems., 6 pages, 3 figures

One of the most fundamental and yet elusive collective phases of an interacting electron system is the quantum Wigner crystal (WC), an ordered array of electrons expected to form when the electrons' Coulomb repulsion energy eclipses their kinetic (Fermi) energy. In low-disorder, two-dimensional (2D) electron systems, the quantum WC is known to be favored at very low temperatures ($T$) and small Landau level filling factors ($\nu$), near the termination of the fractional quantum Hall states. This WC phase exhibits an insulating behavior, reflecting its pinning by the small but finite disorder potential. An experimental determination of a $T$ vs $\nu$ phase diagram for the melting of the WC, however, has proved to be challenging. Here we use capacitance measurements to probe the 2D WC through its effective screening as a function of $T$ and $\nu$. We find that, as expected, the screening efficiency of the pinned WC is very poor at very low $T$ and improves at higher $T$ once the WC melts. Surprisingly, however, rather than monotonically changing with increasing $T$, the screening efficiency shows a well-defined maximum at a $T$ which is close to the previously-reported melting temperature of the WC. Our experimental results suggest a new method to map out a $T$ vs $\nu$ phase diagram of the magnetic-field-induced WC precisely., Comment: The formal version is published on Phys. Rev. Lett. 122, 116601 (2019)

Microwave spectroscopy within the Landau filling ($\ensuremath{\nu}$) range of the integer quantum Hall effect (IQHE) has revealed pinning mode resonances signifying Wigner solids (WSs) composed of quasiparticles or -holes. We study pinning modes of WSs in wide quantum wells (WQWs) for $0.8\ensuremath{\le}\ensuremath{\nu}\ensuremath{\le}1.2$, varying the density, $n$, and tilting the sample by angle $\ensuremath{\theta}$ in the magnetic field. Three distinct WS phases are accessed. One phase, S1, is phenomenologically the same as the WS observed in the IQHEs of narrow QWs. The second phase, S2, exists at $\ensuremath{\nu}$ further from $\ensuremath{\nu}=1$ than S1, and requires a sufficiently large $n$ or $\ensuremath{\theta}$, implying S2 is stabilized by the Zeeman energy. The melting temperatures of S1 and S2, estimated from the disappearance of the pinning mode, show different behavior versus $\ensuremath{\nu}$. At the largest $n$ or $\ensuremath{\theta}$, S2 disappears and the third phase, S1A, replaces S1, also exhibiting a pinning mode. This occurs as the WQW $\ensuremath{\nu}=1$ IQHE becomes a two-component, Halperin-Laughlin ${\mathrm{\ensuremath{\Psi}}}_{111}$ state. We interpret S1A as a WS of the excitations of ${\mathrm{\ensuremath{\Psi}}}_{111}$, which has not been previously observed.

Pinning modes of a Wigner solid show remarkably small screening by a fractional quantum Hall liquid in close proximity., We studied a bilayer system hosting two-dimensional electron systems (2DESs) in close proximity but isolated from one another by a thin barrier. One 2DES has low electron density and forms a Wigner solid (WS) at high magnetic fields. The other has much higher density and, in the same field, exhibits fractional quantum Hall states (FQHSs). The WS spectrum has resonances which are understood as pinning modes, oscillations of the WS within the residual disorder. We found the pinning mode frequencies of the WS are strongly affected by the FQHSs in the nearby layer. Analysis of the spectra indicates that the majority layer screens like a dielectric medium even when its Landau filling is ~1/2, at which the layer is essentially a composite fermion (CF) metal. Although the majority layer is only ~ one WS lattice constant away, a WS site only induces an image charge of ~0.1e in the CF metal.

The fractional quantum Hall state (FQHS) observed at a half-filled Landau level in an interacting two-dimensional electron system (2DES) is among the most exotic states of matter as its quasiparticles are expected to be Majoranas with non-Abelian statistics. We demonstrate here the unexpected presence of such a state in a novel 2DES with a strong band-mass anisotropy. The FQHS we observe has unusual characteristics. While its Hall resistance is well-quantized at low temperatures, it exhibits highly-anisotropic in-plane transport resembling compressible stripe/nematic charge-density-wave phases. More striking, the anisotropy sets in suddenly below a critical temperature, suggesting a finite-temperature phase transition. Our observations highlight how anisotropy modifies the many-body phases of a 2DES, and should further fuel the discussion surrounding the enigmatic even-denominator FQHS., Comment: Accepted for publication in Phys. Rev. Lett

One of the most fascinating ground states of an interacting electron system is the so-called Wigner crystal where the electrons, in order to minimize their repulsive Coulomb energy, form an ordered array. Here we report measurements of the critical filling factor ($\nu_{C}$) below which a magnetic-field-induced, quantum Wigner crystal forms in a dilute, two-dimensional electron layer when a second, high-density electron layer is present in close proximity. The data reveal that the Wigner crystal forms at a significantly smaller $\nu_{C}$ compared to the $\nu_{C}$ ($\simeq 0.20$) in single-layer two-dimensional electron systems. The measured $\nu_{C}$ exhibits a strong dependence on the interlayer distance, reflecting the interaction and screening from the adjacent, high-density layer., Comment: The formal version is published on Phys. Rev. B (2018)

In a number of widely studied materials, such as Si, AlAs, Bi, graphene, MoS_{2}, and many transition metal dichalcogenide monolayers, electrons acquire an additional, spinlike degree of freedom at the degenerate conduction band minima, also known as "valleys." External symmetry-breaking fields such as mechanical strain, or electric or magnetic fields, can tune the valley polarization of these materials, making them suitable candidates for "valleytronics." Here we study a quantum well of AlAs, where the two-dimensional electrons reside in two energetically degenerate valleys. By fabricating a strain-inducing grating on the sample surface, we engineer a spatial modulation of the electron population in different valleys, i.e., a "valley superlattice" in the quantum well plane. Our results establish a novel manipulation technique of the valley degree of freedom, paving the way to realizing a valley-selective layered structure in multivalley materials, with potential application in valleytronics.

Degenerate conduction-band minima, or `valleys', in materials such as Si, AlAs, graphene, and MoS$_2$ allow them to host two-dimensional electron systems (2DESs) that can access a valley degree of freedom. These multivalley 2DESs present exciting opportunities for both pragmatic and fundamental research alike because not only are they a platform for valleytronic devices, but they also provide a tool to tune and investigate the properties of complex many-body ground states. Here, we report ultra-high quality, modulation doped AlAs quantum wells containing 2DESs that occupy two anisotropic valleys and have electron mobilities peaking at $2.4\times10^6$ cm$^{2}$V$^{-1}$s$^{-1}$ at a density of $2.2\times10^{11}$ cm$^{-2}$. This is more than an order of magnitude improvement in mobility over previous results. The unprecedented quality of our samples is demonstrated by magneto-transport data that show high-order fractional quantum Hall minima up to the Landau level filling $\nu=8/17$, and even the elusive $\nu=1/5$ quantum Hall state.

The enigmatic even-denominator fractional quantum Hall state at Landau level filling factor ν=5/2 is arguably the most promising candidate for harboring Majorana quasiparticles with non-Abelian statistics and, thus, of potential use for topological quantum computing. The theoretical description of the ν=5/2 state is generally believed to involve a topological p-wave pairing of fully-spin-polarized composite fermions through their condensation into a non-Abelian Moore-Read Pfaffian state. There is, however, no direct and conclusive experimental evidence for the existence of composite fermions near ν=5/2 or for an underlying fully-spin-polarized Fermi sea. Here, we report the observation of composite fermions very near ν=5/2 through geometric resonance measurements and find that the measured Fermi wave vector provides direct demonstration of a Fermi sea with full spin polarization. This lends crucial credence to the model of 5/2 fractional quantum Hall effect as a topological p-wave paired state of composite fermions.

Low-defect two-dimensional electron systems (2DESs) are essential for studies of fragile many-body interactions that only emerge in nearly-ideal systems. As a result, numerous efforts have been made to improve the quality of modulation-doped ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$/GaAs quantum wells (QWs), with an emphasis on purifying the source material of the QW itself or achieving better vacuum in the deposition chamber. However, this approach overlooks another crucial component that comprises such QWs, the ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ barrier. Here we show that having a clean Al source and hence a clean barrier is instrumental to obtain a high-quality GaAs 2DES in a QW. We observe that the mobility of the 2DES in GaAs QWs declines as the thickness or Al content of the ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ barrier beneath the QW is increased, which we attribute to the surface segregation of oxygen atoms that originate from the Al source. This conjecture is supported by the improved mobility in the GaAs QWs as the Al cell is cleaned out by baking.

The interplay between different orders is of fundamental importance in physics. The spontaneous, symmetry-breaking charge order, responsible for the stripe or the nematic phase, has been of great interest in many contexts where strong correlations are present, such as high-temperature superconductivity and quantum Hall effect. In this article we show the unexpected result that in an interacting two-dimensional electron system, the robustness of the nematic phase, which represents an order in the charge degree of freedom, not only depends on the orbital index of the topmost, half-filled Landau level, but it is also strongly correlated with the magnetic order of the system. Intriguingly, when the system is fully magnetized, the nematic phase is particularly robust and persists to much higher temperatures compared to the nematic phases observed previously in quantum Hall systems. Our results give fundamental new insight into the role of magnetization in stabilizing the nematic phase, while also providing a new knob with which it can be effectively tuned.

The two-dimensional electron system in an InAs quantum well has emerged as a prime candidate for hosting exotic quasiparticles with non-Abelian statistics such as Majorana fermions and parafermions. To attain its full promise, however, the electron system has to be clean enough to exhibit electron-electron interaction phenomena. Here, we report the observation of the fractional quantum Hall effect in a very low disorder InAs quantum well with a well width of 24 nm, containing a two-dimensional electron system with a density $n=7.8\ifmmode\times\else\texttimes\fi{}{10}^{11}\phantom{\rule{0.28em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$ and low-temperature mobility $1.8\ifmmode\times\else\texttimes\fi{}{10}^{6}\phantom{\rule{0.28em}{0ex}}{\mathrm{cm}}^{2}$/Vs. At a temperature of $\ensuremath{\simeq}\phantom{\rule{0.16em}{0ex}}35$ mK and $B\ensuremath{\simeq}24$ T, we observe a deep minimum in the longitudinal resistance, accompanied by a nearly quantized Hall plateau at a Landau level filling factor $\ensuremath{\nu}=4/3$.

An interacting bilayer electron system provides an extended platform to study electron-electron interaction beyond single layers. We report here experiments demonstrating that the layer densities of an asymmetric bilayer electron system oscillate as a function of perpendicular magnetic field that quantizes the energy levels. At intermediate fields, this interlayer charge transfer can be well explained by the alignment of the Landau levels in the two layers. At the highest fields where both layers reach the extreme quantum limit, however, there is an anomalous, enhanced charge transfer to the majority layer. Surprisingly, when the minority layer becomes extremely dilute, this charge transfer slows down as the electrons in the minority layer condense into a Wigner crystal. Furthermore, by examining the quantum capacitance of the dilute layer at high fields, the screening induced by the composite fermions in an adjacent layer is unveiled. The results highlight the influence of strong interaction in interlayer charge transfer in the regime of very high fields and low Landau level filling factors., Please see the formal version on PRB

We study a bilayer GaAs hole system that hosts two distinct many-body phases at low temperatures and high perpendicular magnetic fields. The higher-density (top) layer develops a Fermi sea of composite fermions (CFs) in its half-filled lowest Landau level, while the lower-density (bottom) layer forms a Wigner crystal (WC) as its filling becomes very small. Owing to the inter-layer interaction, the CFs in the top-layer feel the periodic Coulomb potential of the WC in the bottom-layer. We measure the magnetoresistance of the top-layer while changing the bottom-layer density. As the WC layer density increases, the resistance peaks separating the adjacent fractional quantum Hall states in the top-layer change nonmonotonically and attain maximum values when the cyclotron orbit of the CFs encloses one WC lattice point. These features disappear at T = 275 mK when the WC melts. The observation of such geometric resonance features is unprecedented and surprising as it implies that the CFs retain a well-defined cyclotron orbit and Fermi wave vector even deep in the fractional quantum Hall regime, far from half-filling., Comment: 5 paages, 3 figures

We demonstrate tuning of the Fermi contour anisotropy of two-dimensional (2D) holes in a symmetric GaAs (001) quantum well via the application of in-plane strain. The ballistic transport of high-mobility hole carriers allows us to measure the Fermi wavevector of 2D holes via commensurability oscillations as a function of strain. Our results show that a small amount of in-plane strain, on the order of $10^{-4}$, can induce significant Fermi wavevector anisotropy as large as 3.3, equivalent to a mass anisotropy of 11 in a parabolic band. Our method to tune the anisotropy \textit{in situ} provides a platform to study the role of anisotropy on phenomena such as the fractional quantum Hall effect and composite fermions in interacting 2D systems., Accepted to Applied Physics Letters

The pairing of composite fermions (CFs), i.e., electron-flux quasiparticles, is commonly proposed to explain the even-denominator fractional quantum Hall state observed at $\ensuremath{\nu}=5/2$ in the first excited $(N=1)$ Landau level (LL) of a two-dimensional electron system (2DES). While well established to exist in the lowest $(N=0)$ LL, much is unknown about CFs in the $N=1$ LL. Here we carry out geometric resonance measurements to detect CFs at $\ensuremath{\nu}=5/2$ by subjecting the 2DES to a one-dimensional density modulation. Our data, taken at a temperature of 0.3 K, reveal no geometric resonances for CFs in the $N=1$ LL. In stark contrast, we observe clear signatures of such resonances when $\ensuremath{\nu}=5/2$ is placed in the $N=0$ LL of the antisymmetric subband by varying the 2DES width. This finding implies that the CFs' mean free path is significantly smaller in the $N=1$ LL compared to the $N=0$ LL. Our additional data as a function of in-plane magnetic field highlight the role of subband index and establish that CFs at $\ensuremath{\nu}=5/2$ in the $N=0$ LL are more anisotropic in the symmetric subband than in the antisymmetric subband.

There has been a surge of recent interest in the role of anisotropy in interaction-induced phenomena in two-dimensional (2D) charged carrier systems. A fundamental question is how an anisotropy in the energy-band structure of the carriers at zero magnetic field affects the properties of the interacting particles at high fields, in particular of the composite fermions (CFs) and the fractional quantum Hall states (FQHSs). We demonstrate here tunable anisotropy for holes and hole-flux CFs confined to GaAs quantum wells, via applying \textit{in situ} in-plane strain and measuring their Fermi wavevector anisotropy through commensurability oscillations. For strains on the order of $10^{-4}$ we observe significant deformations of the shapes of the Fermi contours for both holes and CFs. The measured Fermi contour anisotropy for CFs at high magnetic field ($\alpha_\mathrm{CF}$) is less than the anisotropy of their low-field hole (fermion) counterparts ($\alpha_\mathrm{F}$), and closely follows the relation: $\alpha_\mathrm{CF} = \sqrt{\alpha_\mathrm{F}}$. The energy gap measured for the $\nu = 2/3$ FQHS, on the other hand, is nearly unaffected by the Fermi contour anisotropy up to $\alpha_\mathrm{F} \sim 3.3$, the highest anisotropy achieved in our experiments., Comment: 6 pages, 5 figures

The fractional quantum Hall effect (FQHE) states at half integer Landau fillings ($\nu$) have long been of great interest, since they have correlations that differ from those of the fundamental Laughlin states found at odd denominators. At $\nu=1/2$ the FQHE has been observed in wide or double quantum wells, and is ascribed to the two-component Halperin-Laughlin $\Psi_{331}$ state. $\Psi_{331}$ excitations carry charge $\pm e/4$, like the carriers of $\nu=5/2$ states which are of interest in quantum computation. Further, such an excitation (quasiparticle or -hole) of $\Psi_{331}$ has unequal, opposite charge in the top and bottom layers, and hence an up or down dipole moment. Here we report evidence for a Wigner solid (WS) of such dipolar quasiholes from a quantitative study of the microwave spectra of a wide quantum well (WQW) at $\nu$ close to 1/2.

We report Shubnikov-de Haas oscillations measurements revealing experimental signatures of an annular Fermi sea that develops near the energy band edge of the excited subband of two-dimensional holes confined in a wide GaAs quantum well. As we increase the hole density, when the Fermi level reaches the excited subband edge, the low-field magnetoresistance traces show a sudden emergence of new oscillations at an unexpectedly large frequency whose value does $\textit{not}$ correspond to the (negligible) density of holes in the excited subband. There is also a sharp and significant increase in zero-field resistance near this onset of subband occupation. Guided by numerical energy dispersion calculations, we associate these observations with the unusual shape of the excited subband dispersion which results in a "ring of extrema" at finite wavevectors and an annular Fermi sea. Such a dispersion and Fermi sea have long been expected from energy band calculations in systems with strong spin-orbit interaction but their experimental signatures have been elusive., Comment: 5 pages, 4 figures

We report transport mobility measurements for clean, two-dimensional (2D) electron systems confined to GaAs quantum wells (QWs), grown via molecular beam epitaxy, in two families of structures, a standard, symmetrically-doped GaAs set of QWs with Al$_{0.32}$Ga$_{0.68}$As barriers, and one with additional AlAs cladding surrounding the QWs. Our results indicate that the mobility in narrow QWs with no cladding is consistent with existing theoretical calculations where interface roughness effects are softened by the penetration of the electron wave function into the adjacent low barriers. In contrast, data from AlAs-clad wells show a number of samples where the 2D electron mobility is severely limited by interface roughness. These measurements across three orders of magnitude in mobility provide a road map of reachable mobilities in the growth of GaAs structures of different electron densities, well widths, and barrier heights.

Via the application of parallel magnetic field, we induce a single-layer to bilayer transition in two-dimensional electron systems confined to wide GaAs quantum wells, and study the geometric resonance of composite fermions (CFs) with a periodic density modulation in our samples. The measurements reveal that CFs exist close to bilayer quantum Hall states, formed at Landau level filling factors $\nu=1$ and 1/2. Near $\nu=1$, the geometric resonance features are consistent with half the total electron density in the bilayer system, implying that CFs prefer to stay in separate layers and exhibit a two-component behavior. In contrast, close to $\nu=1/2$, CFs appear single-layer-like (single-component) as their resonance features correspond to the total density., Comment: Accepted for publication in Phys. Rev. Lett

A transport study of two-dimensional (2D) holes confined to wide GaAs quantum wells provides a glimpse of a subtle competition between different many-body phases at a Landau level filling $\ensuremath{\nu}=3/2$ in tilted magnetic fields. At large tilt angles ($\ensuremath{\theta}$), an anisotropic, stripe (or nematic) phase replaces the isotropic compressible Fermi sea at $\ensuremath{\nu}=3/2$ if the quantum well has a symmetric charge distribution. When the charge distribution is made asymmetric, instead of the stripe phase, an even-denominator fractional quantum state appears at $\ensuremath{\nu}=3/2$ in a range of large $\ensuremath{\theta}$, and reverts back to a compressible state at even higher $\ensuremath{\theta}$. We attribute this remarkable evolution to the significant mixing of the excited and ground-state Landau levels of 2D hole systems in tilted fields.

When the kinetic energy of a collection of interacting two-dimensional (2D) electrons is quenched at very high magnetic fields so that the Coulomb repulsion dominates, the electrons are expected to condense into an ordered array, forming a quantum Wigner crystal (WC). Although this exotic state has long been suspected in high-mobility 2D electron systems at very low Landau level fillings (ν≪1), its direct observation has been elusive. Here we present a new technique and experimental results directly probing the magnetic-field-induced WC. We measure the magnetoresistance of a bilayer electron system where one layer has a very low density and is in the WC regime (ν≪1), while the other ("probe") layer is near ν=1/2 and hosts a sea of composite fermions (CFs). The data exhibit commensurability oscillations in the magnetoresistance of the CF layer, induced by the periodic potential of WC electrons in the other layer, and provide a unique, direct glimpse at the symmetry of the WC, its lattice constant, and melting. They also demonstrate a striking example of how one can probe an exotic many-body state of 2D electrons using equally exotic quasiparticles of another many-body state.

Interacting two-dimensional electrons confined in a GaAs quantum well exhibit isotropic transport when the Fermi level resides in the first excited ($N=1$) Landau level. Adding an in-plane magnetic field ($B_{||}$) typically leads to an anisotropic, stripe-like (nematic) phase of electrons with the stripes oriented perpendicular to the $B_{||}$ direction. Our experimental data reveal how a periodic density modulation, induced by a surface strain grating from strips of negative electron-beam resist, competes against the $B_{||}$-induced orientational order of the stripe phase. Even a minute ($, Accepted for publication in Phys. Rev. Lett

We report magnetotransport measurements of integer and fractional quantum Hall states in an AlAs quantum well where two conduction band valleys are occupied. By monitoring the valley level crossings for these states as a function of applied symmetry-breaking strain, we determine the “valley susceptibility” (the change of valley population with strain) for both electrons and composite Fermions. The data reveal that these valley susceptibilities are significantly enhanced over the band values, reflecting the role of strong interaction. Moreover, the measured valley susceptibilities are quite similar to the values of spin susceptibility, establishing the analogy between the spin and valley degrees of freedom.

We report a new correlated phase of two-dimensional charged carriers in high magnetic fields, manifested by an anisotropic insulating behavior at low temperatures. It appears in a large range of low Landau level fillings $1/3\ensuremath{\lesssim}\ensuremath{\nu}\ensuremath{\lesssim}2/3$ in hole systems confined to wide GaAs quantum wells when the sample is tilted in magnetic field to an intermediate angle. The parallel field component (${B}_{\ensuremath{\parallel}}$) leads to a crossing of the lowest two Landau levels, and an elongated hole wave function in the direction of ${B}_{\ensuremath{\parallel}}$. Under these conditions, the in-plane resistance exhibits an insulating behavior, with the resistance along ${B}_{\ensuremath{\parallel}}$ about 10 times smaller than the resistance perpendicular to ${B}_{\ensuremath{\parallel}}$. We interpret this anisotropic insulating phase as a two-component, striped Wigner crystal.

We study the role of anisotropy on the transport properties of composite fermions near Landau level filling factor $\ensuremath{\nu}=1/2$ in two-dimensional holes confined to a GaAs quantum well. By applying a parallel magnetic field, we tune the composite fermion Fermi sea anisotropy and monitor the relative change of the transport scattering time at $\ensuremath{\nu}=1/2$ along the principal directions. Interpreted in a simple Drude model, our results suggest that the scattering time is longer along the longitudinal direction of the composite fermion Fermi sea. Furthermore, the measured energy gap for the fractional quantum Hall state at $\ensuremath{\nu}=2/3$ decreases when anisotropy becomes significant. The decrease, however, might partly stem from the charge distribution becoming bilayerlike at very large parallel magnetic fields.

Interacting bilayers placed in perpendicular magnetic field exhibit a peculiar quantum Hall state (QHS) at total filling factor ν = 1 , owing to the carrier–carrier interaction in the two layers. The physics of the ν = 1 QHS is similar to that of the many-particle ground state of a superconductor. Unlike conventional superconductors, however, in the ν = 1 QHS carriers in one layer pair with vacancies in the opposite layer forming charge neutral particles which flow without dissipation at the lowest temperatures. Here we review the experimental evidence supporting this picture, with an emphasis on magnetotransport in interacting GaAs hole bilayers in a configuration where equal and opposite currents are passed in the two layers.

Using symmetry breaking strain to tune the valley occupation of a two-dimensional (2D) electron system in an AlAs quantum well, together with an applied in-plane magnetic field to tune the spin polarization, we independently control the system's valley and spin degrees of freedom and map out a spin-valley phase diagram for the 2D metal-insulator transition. The insulating phase occurs in the quadrant where the system is both spin- and valley-polarized. This observation establishes the equivalent roles of spin and valley degrees of freedom in the 2D metal-insulator transition., Comment: 4 pages, 2 figures