1. Degradation mechanism of 0.15 um AlGaN/GaN HEMTs: effects of hot electrons
- Author
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Gao, Z., Rampazzo, F., Meneghini, M., De Santi, C., Chiocchetta, F., Marcon, D., Meneghesso, G., and Zanoni, E.
- Subjects
Physics - Applied Physics - Abstract
The degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration were investigated by means of hot-electron step stress and 24 hours stress tests. Firstly, DC and EL characterization at room temperature are summarized, then the parametric evolution during hot-electron step stress tests at the semi-on state was compared, the assumption for the degradation mechanism is that hot-electrons activated the pre-existing traps in the buffer, attenuate the electric field in the gate drain access region and damaging the gate contact, the parametric evolution during constant stresses is discussed., Comment: ["European Union (EU)" & "Horizon 2020"]["Euratom" & Euratom research & training programme 2014-2018"][EUGANIC][EDA Contract B 1447 IAP1 GP][5G_GaN_2]
- Published
- 2021
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