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We report on broadband and in-plane angle dependent ferromagnetic resonance measurements of MnN (30 nm)/CoFeB ( t CoFeB ) exchange bias bilayer systems with CoFeB thicknesses ranging from 5 to 20 nm. We find that the strong unidirectional anisotropy in this system is accompanied by a strong uniaxial in-plane anisotropy and a small interfacial perpendicular anisotropy ( K ⊥ , i = 0.043 ± 0.001 erg / cm 2 ). The strength of the interfacial exchange bias coupling in this system Δ σ eb = 0.193 ± 0.005 erg / cm 2 is only 2.5 times larger than the interfacial uniaxial coupling strength Δ σ u = 0.076 ± 0.003 erg / cm 2 . The relaxation in this system also shows a strong unidirectional and uniaxial in-plane anisotropy. While the observed thickness dependence of the uniaxial anisotropy of the relaxation is consistent with an interfacial two-magnon scattering contribution, we find that this is not the case for the unidirectional relaxation.

Ta/MnN/CoFeB systems show high exchange bias of about 1800 Oe at room temperature; however, their thermal stability is limited by nitrogen diffusion that occurs during annealing processes [Quarterman et al., Phys. Rev. Mater. 3, 064413 (2019) and Dunz et al., AIP Adv. 8, 056304 (2018)]. In this study, we investigate the consequences of nitrogen diffusion in Ta/MnN/CoFeB exchange bias stacks in dependence on the Ta buffer layer thickness. Furthermore, we test the effects of introducing a TaN x layer between MnN and Ta as a diffusion barrier. Our findings show that the Ta buffer layer plays a decisive role in determining the exchange bias in the Ta/MnN/CoFeB system. It acts as a crystallographic seed layer for better growth of MnN and as a nitrogen sink during the annealing process. We show that both of these functions are crucial for the outcome of high exchange bias. Additionally, our results reveal that the measures decreasing nitrogen diffusion, even though being beneficial in terms of thermal stability, mostly lead to decreased crystallinity and thus weaker exchange bias.

Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching of a polycrystalline, metallic antiferromagnet with low anisotropy and high N\'eel temperature. We demonstrate the switching in a Ta / MnN / Pt trilayer system, deposited by (reactive) magnetron sputtering. The dependence of switching amplitude, efficiency, and relaxation are studied with respect to the MnN film thickness, sample temperature, and current density. Our findings are consistent with a thermal activation model and resemble to a large extent previous measurements on CuMnAs and Mn$_2$Au, which exhibit similar switching characteristics due to an intrinsic spin-orbit torque., Comment: 7 pages, 5 figures

We report the effects of nitrogen diffusion on exchange bias in MnN/CoFeB heterostructures as a function of MnN thickness and field-annealing temperature. We find that competing effects occur in which high-temperature annealing enhances exchange bias in heterostructures with thick MnN through improved crystallinity, but in thinner samples this annealing ultimately eliminates the exchange bias due to nitrogen deficiency. Using polarized neutron reflectometry and magnetic x-ray spectroscopy, we directly observe increasing amounts of nitrogen migration from MnN into the underlying Ta seed layer with increased annealing temperature. In heterostructures with thin MnN layers, the resulting nitrogen deficiency becomes significant enough to alter the antiferromagnetic state before the Ta seed layer is nitrogen saturated. Furthermore, we observe intermixing at the MnN/CoFeB interface which is attributed to the nitrogen deficiency creating vacancies in the MnN layer after annealing in a field. This intermixing of Mn with Co and Fe is not believed to be the cause for loss of exchange bias when the MnN layer is too thin but is instead a secondary effect due to increased vacancies after nitrogen migration.

We have investigated the influence of doping the antiferromagnetic MnN component in the polycrystalline MnN/CoFe exchange bias system, which shows high exchange bias of up to 1800 Oe at room temperature. The thermal stability of this system is limited by nitrogen diffusion that occurs during annealing. In order to predict improved thermal stability, defect energies of potential dopant elements which substitute for Mn were calculated via density functional theory. Elements calculated to have negative defect energies will bind nitrogen more strongly to the lattice, limiting diffusion. We prepared exchange bias stacks with dopant concentrations of a few percent by (reactive) co-sputtering, testing dopant elements with defect energies ranging from highly negative to slightly positive. We show that doping with elements calculated to have negative defect energies indeed improves the thermal stability. Y-doped MnN layers with dopant concentrations below 2% result in exchange bias fields higher than 1000 Oe for annealing temperatures up to 485 °C.We have investigated the influence of doping the antiferromagnetic MnN component in the polycrystalline MnN/CoFe exchange bias system, which shows high exchange bias of up to 1800 Oe at room temperature. The thermal stability of this system is limited by nitrogen diffusion that occurs during annealing. In order to predict improved thermal stability, defect energies of potential dopant elements which substitute for Mn were calculated via density functional theory. Elements calculated to have negative defect energies will bind nitrogen more strongly to the lattice, limiting diffusion. We prepared exchange bias stacks with dopant concentrations of a few percent by (reactive) co-sputtering, testing dopant elements with defect energies ranging from highly negative to slightly positive. We show that doping with elements calculated to have negative defect energies indeed improves the thermal stability. Y-doped MnN layers with dopant concentrations below 2% result in exchange bias fields higher than 1000 Oe for a...

We report an exchange bias of more than $2700\,$Oe at room temperature in MnN/CoFe bilayers after high-temperature annealing. We studied the dependence of exchange bias on the annealing temperature for different MnN thicknesses in detail and found that samples with $t_{\text{MnN}}>32\,$nm show an increase of exchange bias for annealing temperatures higher than $T_{\text{A}}=400\,^{\circ}$C. Maximum exchange bias values exceeding $2000\,$Oe with reasonably small coercive fields around $600\,$Oe are achieved for $t_{\text{MnN}}= 42, 48\,$nm. The median blocking temperature of those systems is determined to be $180\,^{\circ}$C after initial annealing at $T_{\text{A}}=525\,^{\circ}$C. X-ray diffraction measurements and Auger depth profiling show that the large increase of exchange bias after high-temperature annealing is accompanied by strong nitrogen diffusion into the Ta buffer layer of the stacks.

We investigated an out-of-plane exchange bias system that is based on the antiferromagnet MnN. Polycrystalline, highly textured film stacks of Ta / MnN / CoFeB / MgO / Ta were grown on SiO$_x$ by (reactive) magnetron sputtering and studied by x-ray diffraction and Kerr magnetometry. Nontrivial modifications of the exchange bias and the perpendicular magnetic anisotropy were observed both as functions of film thicknesses as well as field cooling temperatures. In optimized film stacks, a giant perpendicular exchange bias of 3600 Oe and a coercive field of 350 Oe were observed at room temperature. The effective interfacial exchange energy is estimated to be $J_\mathrm{eff} = 0.24$ mJ/m$^2$ and the effective uniaxial anisotropy constant of the antiferromagnet is $K_\mathrm{eff} = 24$ kJ/m$^3$. The maximum effective perpendicular anisotropy field of the CoFeB layer is $H_\mathrm{ani} = 3400$ Oe. These values are larger than any previously reported values. These results possibly open a route to magnetically stable, exchange biased perpendicularly magnetized spin valves., 4 pages, 5 figures

We report on the new polycrystalline exchange bias system MnN/CoFe, which shows exchange bias of up to 1800Oe at room temperature with a coercive field around 600Oe. The room temperature values of the interfacial exchange energy and the effective uniaxial anisotropy are estimated to be $J_\mathrm{eff} = 0.41\,\mathrm{mJ}/\mathrm{m}^2$ and $K_\mathrm{eff} = 37\,\mathrm{kJ}\,/\,\mathrm{m}^3$. The thermal stability was found to be tunable by controlling the nitrogen content of the MnN. The maximum blocking temperature exceeds $325^\circ$C, however the median blocking temperature in the limit of thick MnN is $160^\circ$C. Good oxidation stability through self-passivation was observed, enabling the use of MnN in lithographically defined microstructures. As a proof-of-principle we demonstrate a simple GMR stack exchange biased with MnN, which shows clear separation between parallel and antiparallel magnetic states. These properties come along with a surprisingly simple manufacturing process for the MnN films., 7 pages, 6 figures