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Vibration energy harvesting based on piezoelectric transducers is an attractive choice to replace single-use batteries in powering Wireless Sensor Nodes (WSNs). As of today, their widespread application is hindered due to low operational bandwidth and the conventional use of lead-based materials. The Restriction of Hazardous Substances legislation (RoHS) implemented in the European Union restricts the use of lead-based piezoelectric materials in future electronic devices. This paper investigates lithium niobate ( L i N b O 3 ) as a lead-free material for a high-performance broadband Piezoelectric Energy Harvester (PEH). A single-clamped, cantilever beam-based piezoelectric microgenerator with a mechanical footprint of 1 cm2, working at a low resonant frequency of 200 Hz, with a high piezoelectric coupling coefficient and broad bandwidth, was designed and microfabricated, and its performance was evaluated. The PEH device, with an acceleration of 1 g delivers a maximum output RMS power of nearly 35 μW/cm2 and a peak voltage of 6 V for an optimal load resistance at resonance. Thanks to a high squared piezoelectric electro-mechanical coupling coefficient ( k 2 ), the device offers a broadband operating frequency range above 10% of the central frequency. The Mason electro-mechanical equivalent circuit was derived, and a SPICE model of the device was compared with experimental results. Finally, the output voltage of the harvester was rectified to provide a DC output stored on a capacitor, and it was regulated and used to power an IoT node at an acceleration of as low as 0.5 g. [ABSTRACT FROM AUTHOR]

Development of bulk acoustic wave filters with ultra-wide pass bands and operating at high frequencies for 5th and 6th generation telecommunication applications and micro-scale actuators, energy harvesters and sensors requires lead-free piezoelectric thin films with high electromechanical coupling and compatible with Si technology. In this paper, the epitaxial growth of 36°Y-X and 30°X-Y LiNbO3 films by direct liquid injection chemical vapour deposition on Si substrates by using epitaxial SrTiO3 layers, grown by molecular beam epitaxy, has been demonstrated. The stability of the interfaces and chemical interactions between SrTiO3, LiNbO3 and Si were studied experimentally and by thermodynamical calculations. The experimental conditions for pure 36°Y-X orientation growth have been optimized. The piezoelectricity of epitaxial 36°Y-X LiNbO3/SrTiO3/Si films was confirmed by means of piezoelectric force microscopy measurements and the ferroelectric domain inversion was attained at 85 kV.cm−1 as expected for the nearly stoichiometric LiNbO3. According to the theoretical calculations, 36°Y-X LiNbO3 films on Si could offer an electromechanical coupling of 24.4% for thickness extension excitation of bulk acoustic waves and a comparable figure of merit of actuators and vibrational energy harvesters to that of standard PbZr1− x Ti x O3 films. [ABSTRACT FROM AUTHOR]

Lithium niobate is a lead-free material which has attracted considerable attention due to its excellent optical, piezoelectric, and ferroelectric properties. This research is devoted to the synthesis through an innovative sol–gel/spin-coating approach of polycrystalline LiNbO3 films on Si substrates. A novel single-source hetero-bimetallic precursor containing lithium and niobium was synthesized and applied to the sol–gel synthesis. The structural, compositional, and thermal characteristics of the precursor have been tested through attenuated total reflection, X-ray photoelectron spectroscopy, thermogravimetric analysis, and differential scanning calorimetry. The LiNbO3 films have been characterized from a structural point of view with combined X-ray diffraction and Raman spectroscopy. Field-emission scanning electron microscopy, energy dispersive X-ray analysis, and X-ray photoelectron spectroscopy have been used to study the morphological and compositional properties of the deposited films. [ABSTRACT FROM AUTHOR]

We show that a coupling exists between nitrogen vacancy (NV) centers in diamond in proximity to magnetoelastic spin waves generated by a voltage driven surface acoustic wave. Experimental measurements show the presence of coupling driven by both dipolar fields induced by a spin wave-like excitation and off-resonant coupling of the NV energy levels driven by acoustically driven ferromagnetic resonance dynamics. A model is proposed based on chiral coupling of the NV centers to the stray field that originates from a propagating magnetoelastic wave in a thin magnet, and model predictions are validated by experimental observations. Understanding of the coupling enables a direct measurement of the stray field polarization, which in turn provides a detailed picture of the resonantly coupled magnon–phonon interaction. [ABSTRACT FROM AUTHOR]

We present a non-destructive and non-invasive imaging spectroscopic technique with a high spatial and spectral resolution based on the detection of the Rayleigh scattering field radiated out of a centimetric length and micrometric size optical waveguide in operation.

Epitaxial thin films of lithium niobate with a thickness of 160 nm, oriented along the crystallographic c axis, were grown by direct liquid injection chemical vapor deposition on c-sapphire substrates. Different families of very high-frequency surface acoustic waves with general polarization exist in such piezoelectric films on high-velocity substrates. Surface Brillouin light scattering measurements, complemented with fast finite element analysis of wave dispersion, demonstrate Rayleigh, leaky shear, and leaky longitudinal surface waves, excited at frequencies between 10 and 30 GHz. The Brillouin technique reveals dispersion and anisotropy of propagation without the implementation of high-frequency surface acoustic wave transducers. [ABSTRACT FROM AUTHOR]

Raman spectroscopy and x-ray diffraction are used for examining the domain structure and residual stress evolution with film thickness and of phase transition in c/a epitaxial PbTi[O.sub.3]/LaAl[O.sub.3] thin films. Findings reveal that the films were under tensile residual stress in the film plane.