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9 results on '"Marin-Cudraz, David"'

5. Thin-body ESD protections in 28nm UTBB-FDSOI: From static to transient behavior

Author

Solaro, Yohann, Fonteneau, Pascal, Legrand, Charles-Alexandre, Marin-Cudraz, David, passieux, Jérémy, guyader, pascal, Clément, Laurent-Renaud, Fenouillet-Beranger, Claire, Ferrari, Philippe, Cristoloveanu, Sorin, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Electronic ISBN: 978-1-58537-257-7, Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), and Ducroquet, Frédérique

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

International audience; Innovative Ultra-Thin Body and Buried Oxide FDSOI protections (BBC-T and Z2-FET) are characterized and analyzed in order to assess the CDM time domain behavior. In addition to static (leakage and triggering) control, it is found that front and back gate coupling is a very efficient way to improve the transient responses of the proposed devices.

Published
2014

7. Innovative ESD protections for UTBB FD-SOI technology

Author

Solaro, Yohann, primary, Fonteneau, Pascal, additional, Legrand, Charles-Alexandre, additional, Marin-Cudraz, David, additional, Passieux, Jeremy, additional, Guyader, Pascal, additional, Clement, Laurent-Renaud, additional, Fenouillet-Beranger, Claire, additional, Ferrari, Philippe, additional, and Cristoloveanu, Sorin, additional

Published
2013
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9. Sharp-switching band-modulation back-gated devices in advanced FDSOI technology.

Author

Fonteneau, Pascal, Legrand, Charles-Alex, Marin-Cudraz, David, El Dirani, Hassan, Solaro, Yohann, Ferrari, Philippe, and Cristoloveanu, Sorin

Subjects
*SILICON-on-insulator technology, *IONIZATION (Atomic physics), *FABRICATION (Manufacturing)
Abstract

A band-modulation device with a free top surface, named Z 3 -FET (Zero front-gate, Zero swing slope and Zero impact ionization) and fabricated in the most advanced Fully Depleted Silicon-On-Insulator technology, is demonstrated experimentally. Since the device has no front gate, the operation mechanism is controlled by two adjacent heavily doped buried ground planes acting as back-gates. Characteristics such as sharp quasi-vertical switching, low leakage, and tunable trigger voltage are measured and discussed. We explore several variants (thin and thick silicon or SiGe body) and show promising results in terms of high current, switching performance and ESD capability with relatively low back-gate and drain bias operation. [ABSTRACT FROM AUTHOR]

Published
2017
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