1. Bi monocrystal formation on InAs(111)A and B substrates
- Author
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Nicolaï, L., Mariot, J. -M., Djukic, U., Wang, W., Heckmann, O., Richter, M. C., Kanski, J., Leandersson, M., Sadowski, J., Balasubramanian, T., Vobornik, I., Fujii, J., Braun, J., Ebert, H., Minár, J., and Hricovini, K.
- Subjects
Condensed Matter - Materials Science - Abstract
The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the initial stages the Bi growth on the A face (In-terminated InAs) is epitaxial, contrary to that on the B face (As- terminated InAs) that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a $\approx 10$~BL deposit on the A face is identical to that of bulk Bi, while more than $\approx 30$ BL are needed for the B face. Both bulk and surface states are well accounted for by fully relativistic ab initio spin-resolved photoemission calculations., Comment: 7 pages, 7 figures
- Published
- 2018