1. Alternating-bias assisted annealing of amorphous oxide tunnel junctions
- Author
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David P. Pappas, Mark Field, Cameron J. Kopas, Joel A. Howard, Xiqiao Wang, Ella Lachman, Jinsu Oh, Lin Zhou, Alysson Gold, Gregory M. Stiehl, Kameshwar Yadavalli, Eyob A. Sete, Andrew Bestwick, Matthew J. Kramer, and Josh Y. Mutus
- Subjects
Materials of engineering and construction. Mechanics of materials ,TA401-492 - Abstract
Abstract Superconducting quantum bits (qubits) rely on ultra-thin, amorphous oxide tunneling barriers that can have significant inhomogeneities and defects as grown. This can result in relatively large uncertainties and deleterious effects in the circuits, limiting the scalability. Finding a robust solution to the junction reproducibility problem has been a long-standing goal in the field. Here, we demonstrate a transformational technique for controllably tuning the electrical properties of aluminum-oxide tunnel junctions. This is accomplished using a low-voltage, alternating-bias applied individually to the tunnel junctions, with which resistance tuning by more than 70% can be achieved. The data indicates an improvement of coherence and reduction of two-level system defects. Transmission electron microscopy shows that the treated junctions are predominantly amorphous, albeit with a more uniform distribution of alumina coordination across the barrier. This technique is expected to be useful for other devices based on ionic amorphous materials.
- Published
- 2024
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