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Uranyl oxyhydroxide minerals are important weathering products in uranium-contaminated surface and subsurface environments that regulate dissolved uranium (U) concentrations. However, dissolution rates for this class of minerals and associated dissolution mechanisms have not been previously reported for circumneutral pH conditions, particularly for the case of flow through porous media. In this work, the dissolution rates of K- and Na-compreignacite (K2(UO2)6O4(OH)6·8H2O and Na2(UO2)6O4(OH)6·8H2O, respectively) were measured using flow-through columns reacted with two simulated background porewater (BPW) solutions of low and high dissolved carbonate concentration (ca. 0.2 and 2.8 mmol L−1). Column materials were characterized before and after reaction with electron microscopy, bulk chemistry, and EXAFS to identify structural and chemical changes during dissolution and to obtain insight into molecular-scale processes. The reactive transport code CrunchFlow was used to calculate overall dissolution rates while accounting for fluid transport and changes in mineral volume and reactive surface area, and results were compared to steady-state dissolution rate calculations. In low carbonate BPW systems, interlayer K and Na were initially leached from both minerals, and in Na-compreignacite, K and minor divalent cations from the input solution were incorporated into the mineral structure. Results of characterization analyses suggested that after reaction both K- and Na-compreignacite resembled a disordered K-compreignacite with altered surfaces. A 10-fold increase in dissolved carbonate concentration and corresponding increase in pH (from 6.65 to 8.40) resulted in a net removal of 58–87% of total U mass from the columns, compared to

This paper presents the benefits and drawbacks of replacing the traditional Si Mosfets transistors with enhancement mode GaN transistors in a Half-Bridge Zero Voltage and Zero Current Switching Power Switching (ZVZCPS) converter. This type of converters is usually used as Electronic Power Converters (EPC) for telecommunication satellites travelling-wave tube amplifiers (TWTAs). In this study, firstly the converter is theoretically analysed, obtaining its operation, losses and efficiency equations. From these equations, optimizations maps based on the main system parameters are obtained. These optimization maps are the key to quantify the potential benefits of GaN transistors in this type of converters. Theoretical results show that using GaN transistors, the frequency of the converter can be pushed from 125kHz to 830kHz without sacrificing the converter efficiency. This frequency increase is directly related to reduction on the EPC size and weight.

When using a single DC/DC converter with multiple outputs and having a buck topology, which has one filter inductor per output, the designer can choose to couple these outputs together. This paper demonstrates additional benefits of coupling output inductors together. Apart from saving mass and volume, and due to an improved small signal behaviour it also reduces the output impedance of the regulated output. The paper will analyse a seven output push-pull converter used as a space power converter module and verify the theoretical results with experimental measurements.

The aim of this paper is to make an introduction, review and preliminary investigation tasks of the application of Silicon Carbide (SiC) power semiconductors and magnetoresistive (MR) current sensors for Solid State Power Controllers (SSPCs) and controlled switches, especially for high temperature environment and/or high voltage applications.

This paper calculates the failure rate on reversed polarized silicon diodes with the aim to justify, experimentally, the rules of the European Space Agency (ESA) which are referred to the component life’s extension, the reliability increase and the end of life performance enhancement, by using oversized devices (derating rules). In order to verify the derating rules, 80 silicon diodes are used, which are reverse polarized in a high temperature environment. The diodes are divided in 4 groups of 20 diodes, applying a different voltage to each group, in order to relate the failure rate to the applied derating rule. The experiment described in this paper is developed using a temperature accelerated test to check the leakage current in reverse polarization (HTRB - High Temperature Reverse Bias), with the purpose of obtaining results applying an acceleration factor in order to reduce the test duration. By using a thermal model of the whole system and the equations that describe the reverse polarized diode behaviour, it is possible to stress the 80 diodes up to very high temperature avoiding the runaway effect. Finally, the failure rate is calculated and a revision of the derating rules are proposed by using the experimental result obtained.

In the following years power levels of 20 kW to 50 kW will be demanded by the telecommunication satellites. It is not possible to keep 0.5 kW modules with up to 100 modules in parallel and, therefore, higher power modules must be used. A higher bus voltage seems also necessary and any voltage below 150 V and above 100 V could meet the needs. In addition, new optimized topologies that process only a part of the total power delivery can be employed to improve the efficiency. In this article, design guidelines and experimental results of a high efficiency battery discharge regulator (BDR) module based on parallel power processing are given.