31 results on '"Masszi, Ferenc"'
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2. Evaluation of local lifetime in proton irradiated silicon
3. Micro-MOS - a first principle based 3D Monte Carlo simulation program for sub-half micron SI MOSFET:s
4. Modeling of electron-hole scattering in semiconductor power device simulations
5. Evaluation and interpretation 3D Monte Carlo simulation results of submcron MOS transistors
6. A 3D Monte carlo semiconductor device simulator for submicron silicon MOS transistor
7. Evaluation of carrier lifetime in power semiconductors using both optical and electrical measurements supported by two-dimensional computer simulation
8. The MicroMOS 3D Monte Carlo simulation program : A tool for verifying the MINIMOS mobility models
9. On P-I-N diode parameters and static properties at elevated temperatures and high current densities - experiment vs simulation
10. Quantum mechanical approach for the examination of the properties of MOS inversion layers in p-type silicon
11. A lateral bipolar transistor concept on SOI using a self-aligned base definition technique
12. Complex contact models in multidimensional semiconductor device simulation
13. Device simulation to support IR-measurement methods for power device characterization
14. The effect of using different transport models in computer simulations of the permeable-base transistor
15. Complementary Si MESFET concept using silicon-on-sapphire technology
16. Parameter sensitivity analysis for computer modelling of metal-semiconductor junctions
17. A comparison between the diffusion model and the combined diffusion-thermionic-emission model for MS junctions by two-carrier numerical computations
18. Substrate dependent escape depths of sputtered substrate atoms through thin film overlayers
19. Computer simulations of Schottky contacts with a non-constant recombination velocity
20. Studies of sputtering of monoatomic overlayers applied to ion assited thin film processing
21. Combined numerical/large-signal modelling applied to SOS MESFET devices
22. A large-signal SOS MESFET model for nonlinear circuit analysis
23. A combined numerical/larg-signal modelling of SOS MESFET devices
24. Complementary MESFET's for VLSI applications
25. Complementary silicon MESFET's (CMES) using silicon-on-sapphire (SOS) technology
26. CAD studies of MESFET devices with a modified BAMBI
27. A current dependent recombination velocity model for Schottky contacts
28. Silicon IC technology using complementary MESFET's
29. Computer modelling and comparison of different rectifier (MS,MSM,PN) diodes
30. Resistance modulation in schottky barrier diodes
31. A concise modelling concept of M-S junctions for computer-aided design
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